Excellent repeatability, all-sapphire Fabry Perot optical Pressure sensor based on wet etching and direct bonding for Harsh Environment Applications.

In this paper, we proposed an all-sapphire-based extrinsic Fabry-Perot interferometer (EFPI) sensor based on wet etching and the direct bonding process. Temperature measured by the EFPI is used to calibrate pressure measurement. The problem of repeatable measurement of dynamic pressure in a harsh environment is solved. The EFPI sensor can be applied in the temperature range of 25°C to 800°C and the pressure range environment of 0MPa to 5MPa. The pressure sensitivity of 355.8nm/MPa and the temperature sensitivity of 1.64nm/°C are obtained by a cross-correlation function (CCF) algorithm to interrogate the optical sensing system. Therefore, the proposed sensor has a great potential for pressure monitoring, such as jet engines, industrial gas turbine, and so on due to its 8×8mm size and compact structure.

All-sapphire-based fiber-optic pressure sensor for high-temperature applications based on wet etching.

In this paper, we proposed an all-sapphire-based extrinsic Fabry-Perot interferometer (EFPI) pressure sensor based on an optimized wet etching process, aiming to improve the quality of the interference signal. The sapphire pressure sensitive diaphragm (SPSD) was fabricated by wet etching solutions with different mixture ratios of H3PO4 and H2SO4 at 280°C. The differences of mixture ratios affect the surface roughness of SPSD. SPSDs with surface roughness of 3.91nm and 0.39nm are obtained when the mixture ratios of H3PO4 and H2SO4 is 1:1 and 1:3, respectively. We constructed pressure sensing test system adopting these two kinds of SPSD and performed comparative test. The experiment results show that the demodulation jump can be solved and cavity length fluctuation is decreased to ±5nm when the surface roughness of SPSD is 0.39nm.

Highly Effective GeNi Alloy Contact Diffusion Barrier for BiSbTe Long-Term Thermal Exposure.

A GeNi alloy diffusion barrier for contacts on bismuth antimony telluride is proposed. Multiple gold contact diffusion barriers were tested at different thermal aging conditions in air and reducing atmospheres. Among all diffusion barriers, the GeNi alloy barrier shows the best performance for bulk samples with no substantial degradation of the contact resistance, no contact color change, and no change of thermoelectric properties. We observed D Au-GeNi = (9.8 ± 2.7) × 10-20 m2/s within the GeNi alloy barrier, which is 4 times smaller than D Au-BiSbTe. The presence of the initial Ge layer also proves to be effective in reducing nickel diffusion yielding D Ni-BiSbTe = (8.57 ± 0.49) × 10-19 m2/s. During GeNi alloy formation, Ge diffusion into BiSbTe produces GeTe, which apparently blocks the van der Waals gaps eliminating Au and Ni fast diffusion pathways. Thermal aging of BiSbTe nanowires shows that Au and Ni diffusion degrades the thermoelectric power factor, whereas the GeNi alloy barrier sample is mostly preserved. The GeNi alloy barrier is a reliable solution to long-term thermal applications of BiTe-based materials.

Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires.

The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. Selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires.

Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.