Optomechanical Microwave-to-Optical Photon Transducer Chips: Empowering the Quantum Internet Revolution.

The first quantum revolution has brought us the classical Internet and information technology. Today, as technology advances rapidly, the second quantum revolution quietly arrives, with a crucial moment for quantum technology to establish large-scale quantum networks. However, solid-state quantum bits (such as superconducting and semiconductor qubits) typically operate in the microwave frequency range, making it challenging to transmit signals over long distances. Therefore, there is an urgent need to develop quantum transducer chips capable of converting microwaves into optical photons in the communication band, since the thermal noise of optical photons at room temperature is negligible, rendering them an ideal information carrier for large-scale spatial communication. Such devices are important for connecting different physical platforms and efficiently transmitting quantum information. This paper focuses on the fast-developing field of optomechanical quantum transducers, which has flourished over the past decade, yielding numerous advanced achievements. We categorize transducers based on various mechanical resonators and discuss their principles of operation and their achievements. Based on existing research on optomechanical transducers, we compare the parameters of several mechanical resonators and analyze their advantages and limitations, as well as provide prospects for the future development of quantum transducers.

Quantum Light Generation Based on GaN Microring toward Fully On-Chip Source.

An integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, a new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential toward the monolithic integration of quantum light source. In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5±6.5%, which is further configured to generate a heralded single photon with a typical heralded second-order autocorrelation g_{H}^{(2)}(0) of 0.045±0.001. Our results pave the way for developing a chip-scale quantum photonic circuit.

Editorial of the Special Issue 'Nano-Optics and Nano-Optoelectronics: Challenges and Future Trends'.

Through nano-optics and nano-optoelectronics, we can investigate the characteristics of light at the nanometer scale and the interaction of nanometer-scale objects with light [...].

Band structure optimization of superconducting photonic crystals based on transmission spectrum calculation.

The design of photonic crystals using novel materials is of great significance for the construction of high-performance, next-generation photonic crystal devices. We propose a universal Band structure-Transmission optimization-Band structure method based on moving asymptotic (MMA) method, which can be widely applied to photonic crystal structures. In this paper, we use the method to optimize the band structure of high temperature superconducting photonic crystal, and obtain a wider photonic bandgap and better band flatness in a specific frequency band. This method avoids the disadvantages of traditional scanning methods such as low efficiency and high resource consumption, allows multi-parameter optimization, and improves the accuracy and effectiveness of band modulation based on the iterative process of numerical calculation. The study provides some insights for the design of novel wide-bandgap optical devices.

The Tunable Electronic and Optical Properties of Two-Dimensional Bismuth Oxyhalides.

Two-dimensional (2D) bismuth oxyhalides (BiOX) have attracted much attention as potential optoelectronic materials. To explore their application diversity, we herewith systematically investigate the tunable properties of 2D BiOX using first-principles calculations. Their electronic and optical properties can be modulated by changing the number of monolayers, applying strain, and/or varying the halogen composition. The band gap shrinks monotonically and approaches the bulk value, the optical absorption coefficient increases, and the absorption spectrum redshifts as the layer number of 2D BiOX increases. The carrier transport property can be improved by applying tensile strain, and the ability of photocatalytic hydrogen evolution can be obtained by applying compressive strain. General strain engineering will be effective in linearly tuning the band gap of BiOX in a wide strain range. Strain, together with halogen composition variation, can tune the optical absorption spectrum to be on demand in the range from visible to ultraviolet. This suggests that 2D BiOX materials can potentially serve as tunable novel photodetectors, can be used to improve clean energy techniques, and have potential in the field of flexible optoelectronics.

Telecom-band-integrated multimode photonic quantum memory.

Telecom-band-integrated quantum memory is an elementary building block for developing quantum networks compatible with fiber communication infrastructures. Toward such a network with large capacity, an integrated multimode photonic quantum memory at telecom band has yet been demonstrated. Here, we report a fiber-integrated multimode quantum storage of single photon at telecom band on a laser-written chip. The storage device is a fiber-pigtailed Er3+:LiNbO3 waveguide and allows a storage of up to 330 temporal modes of heralded single photon with 4-GHz-wide bandwidth at 1532 nm and a 167-fold increasing of coincidence detection rate with respect to single mode. Our memory system with all-fiber addressing is performed using telecom-band fiber-integrated and on-chip components. The results represent an important step for the future quantum networks using integrated photonics devices.

Discrete frequency-bin entanglement generation via cascaded second-order nonlinear processes in Sagnac interferometer.

Discrete frequency-bin entanglement is an essential resource for applications in quantum information processing. In this Letter, we propose and demonstrate a scheme to generate discrete frequency-bin entanglement with a single piece of periodically poled lithium niobate waveguide in a modified Sagnac interferometer. Correlated two-photon states in both directions of the Sagnac interferometer are generated through cascaded second-order optical nonlinear processes. A relative phase difference between the two states is introduced by changing the polarization state of pump light, thus manipulating the two-photon state at the output of the Sagnac interferometer. The generated two-photon state is sent into a fiber polarization splitter, and then a pure discrete frequency-bin entangled two-photon state is obtained by setting the pump light. The frequency entanglement property is measured by a spatial quantum beating with a visibility of 96.0±6.1%. The density matrix is further obtained with a fidelity of 98.0±3.0% to the ideal state. Our demonstration provides a promising method for the generation of pure discrete frequency-bin entanglement at the telecom band, which is desired in quantum photonics.

First-principles calculation of the optical properties of the YBa2Cu3O7-δ oxygen vacancies model.

We used first-principles methods to investigate how oxygen vacancy defects affect the optical properties of YBa2Cu3O7-δ (0 < δ < 1), a high-temperature superconductor with potential applications in optical detectors. We calculated the electronic structure of YBa2Cu3O7-δ with different amounts of oxygen vacancies at three different sites: Cu-O chains, CuO2 planes, and apical oxygens. The formation energy calculations support the formation of oxygen vacancies in the Cu-O chain at higher concentrations of vacancy defects, with a preference for alignment in the same chain. The presence of oxygen vacancies affects the optical absorption peak of YBa2Cu3O7-δ in different ways depending on their location and concentration. The optical absorption peaks in the visible range (1.6-3.2 eV) decrease in intensity and shift towards the infrared spectrum as oxygen vacancies increase. We demonstrate that oxygen vacancies can be used as a powerful tool to manipulate the optical response of YBa2Cu3O7-δ to different wavelengths in optical detector devices.

Hertz-rate metropolitan quantum teleportation.

Quantum teleportation can transfer an unknown quantum state between distant quantum nodes, which holds great promise in enabling large-scale quantum networks. To advance the full potential of quantum teleportation, quantum states must be faithfully transferred at a high rate over long distance. Despite recent impressive advances, a high-rate quantum teleportation system across metropolitan fiber networks is extremely desired. Here, we demonstrate a quantum teleportation system which transfers quantum states carried by independent photons at a rate of 7.1 ± 0.4 Hz over 64-km-long fiber channel. An average single-photon fidelity of ≥90.6 ± 2.6% is achieved, which exceeds the maximum fidelity of 2/3 in classical regime. Our result marks an important milestone towards quantum networks and opens the door to exploring quantum entanglement based informatic applications for the future quantum internet.

Very high-frequency, gate-tunable CrPS4 nanomechanical resonator with single mode.

Two-dimensional (2D) antiferromagnetic semiconductor chromium thiophosphate (CrPS4) has gradually become a major candidate material for low-dimensional nanoelectromechanical devices due to its remarkable structural, photoelectric characteristics and potentially magnetic properties. Here, we report the experimental study of a new few-layer CrPS4 nanomechanical resonator demonstrating excellent vibration characteristics through the laser interferometry system, including the uniqueness of resonant mode, the ability to work at the very high frequency, and gate tuning. In addition, we demonstrate that the magnetic phase transition of CrPS4 strips can be effectively detected by temperature-regulated resonant frequencies, which proves the coupling between magnetic phase and mechanical vibration. We believe that our findings will promote the further research and applications of the resonator for 2D magnetic materials in the field of optical/mechanical signal sensing and precision measurement.

Structural, Electronic and Optical Properties of Some New Trilayer Van de Waals Heterostructures.

Constructing two-dimensional (2D) van der Waals (vdW) heterostructures is an effective strategy for tuning and improving the characters of 2D-material-based devices. Four trilayer vdW heterostructures, BP/BP/MoS2, BlueP/BlueP/MoS2, BP/graphene/MoS2 and BlueP/graphene/MoS2, were designed and simulated using the first-principles calculation. Structural stabilities were confirmed for all these heterostructures, indicating their feasibility in fabrication. BP/BP/MoS2 and BlueP/BlueP/MoS2 lowered the bandgaps further, making them suitable for a greater range of applications, with respect to the bilayers BP/MoS2 and BlueP/MoS2, respectively. Their absorption coefficients were remarkably improved in a wide spectrum, suggesting the better performance of photodetectors working in a wide spectrum from mid-wave (short-wave) infrared to violet. In contrast, the bandgaps in BP/graphene/MoS2 and BlueP/graphene/MoS2 were mostly enlarged, with a specific opening of the graphene bandgap in BP/graphene/MoS2, 0.051 eV, which is much larger than usual and beneficial for optoelectronic applications. Accompanying these bandgap increases, BP/graphene/MoS2 and BlueP/graphene/MoS2 exhibit absorption enhancement in the whole infrared, visible to deep ultraviolet or solar blind ultraviolet ranges, implying that these asymmetrically graphene-sandwiched heterostructures are more suitable as graphene-based 2D optoelectronic devices. The proposed 2D trilayer vdW heterostructures are prospective new optoelectronic devices, possessing higher performance than currently available devices.

Gate-tunable bolometer based on strongly coupled graphene mechanical resonators.

Bolometers based on graphene have demonstrated outstanding performance with high sensitivity and short response time. In situ adjustment of bolometers is very important in various applications, but it is still difficult to implement in many systems. Here we propose a gate-tunable bolometer based on two strongly coupled graphene nanomechanical resonators. Both resonators are exposed to the same light field, and we can measure the properties of one bolometer by directly tracking the resonance frequency shifts, and indirectly measure the other bolometer through mechanical coupling. We find that the sensitivity and the response bandwidth of both bolometers can be independently adjusted by tuning the corresponding gate voltages. Moreover, the properties of the indirectly measured bolometer show a dependence on the coupling between the two resonators, with other parameters being fixed. Our method has the potential to optimize the design of large-scale bolometer arrays, and open new horizons in infrared/terahertz astronomy and communication systems.

Electronic and Optical Properties of BP, InSe Monolayer and BP/InSe Heterojunction with Promising Photoelectronic Performance.

Two-dimensional (2D) materials provide a new strategy for developing photodetectors at the nanoscale. The electronic and optical properties of black phosphorus (BP), indium selenide (InSe) monolayer and BP/InSe heterojunction were investigated via first-principles calculations. The geometric characteristic shows that the BP, InSe monolayer and BP/InSe heterojunction have high structural symmetry, and the band gap values are 1.592, 2.139, and 1.136 eV, respectively. The results of band offset, band decomposed charge and electrostatic potential imply that the heterojunction structure can effectively inhibit the recombination of electron--hole pairs, which is beneficial for carrier mobility of photoelectric devices. Moreover, the optical properties, including refractive index, reflectivity, electron energy loss, extinction coefficient, absorption coefficient and photon optical conductivity, show excellent performance. These findings reveal the optimistic application potential for future photoelectric devices. The results of the present study provide new insight into challenges related to the peculiar behavior of the aforementioned materials with applications.

Tuning the nonlinearity of graphene mechanical resonators by Joule heating.

As an inherent property of the device itself, nonlinearity in micro-/nano- electromechanical resonators is difficult to eliminate, and it has shown a wide range of applications in basic research, sensing and other fields. While many application scenarios require tunability of the nonlinearity, inherent nonlinearity of a mechanical resonator is difficult to be changed. Here, we report the experimental observation of a Joule heating induced tuning effect on the nonlinearity of graphene mechanical resonators. We fabricated multiple graphene mechanical resonators and detected their resonant properties by an optical interference method. The mechanical vibration of the resonators will enter from the linear to the nonlinear intervals if we enhance the external driving power to a certain value. We found that at a fixed drive power, the nonlinearity of a mechanical resonator can be tuned by applying a dc bias current on the resonator itself. The tuning mechanism could be explained by the nonlinear amplitude-frequency dependence theory. Our results may provide a research platform for the study of mechanical nonlinearity by using atomic-thin layer materials.

Two Dimensional MOene: From Superconductors to Direct Semiconductors and Weyl Fermions.

The number of semiconducting MXenes with direct band gaps is extremely low; thus, it is highly desirable to broaden the MXene family beyond carbides and nitrides to expand the palette of desired chemical and physical properties. Here, we theoretically report the existence of the single-layer (SL) dititanium oxide 2H-Ti2O MOene (MXene-like 2D transition oxides), showing an Ising superconducting feature. Moreover, SL halogenated 2H- and 1T-Ti2O monolayers display tunable semiconducting features and strong light-harvesting ability. In addition, the external strains can induce Weyl fermions via quantum phase transition in 2H-Ti2OF2 and Ti2OCl2 monolayers. Specifically, 2H- and 1T-Ti2OF2 are direct semiconductors with band gaps of 0.82 and 1.18 eV, respectively. Furthermore, the carrier lifetimes of SL 2H- and 1T-Ti2OF2 are evaluated to be 0.39 and 2.8 ns, respectively. This study extends emerging phenomena in a rich family of 2D MXene-like MOene materials, which provides a novel platform for next-generation optoelectronic and photovoltaic fields.

Single-Layer Zirconium Dihalides ZrX2 (X = Cl, Br, and I) with Abnormal Ferroelastic Behavior and Strong Anisotropic Light Absorption Ability.

Recently, two-dimensional (2D) metal halides have brought out an intensive interest for their unique mechanical, electronic, magnetic, and topological properties. Here, we theoretically report the existence of the single-layer (SL) zirconium dihalide materials ZrX2 (X = Cl, Br, and I) using first-principles calculations. SL ZrX2, which can be obtained from its bulk phase through simple mechanical exfoliation, shows the dynamic, thermodynamic, and mechanical stability. Halogen atoms can effectively tune the electronic structure, dipole moment transition, band alignment, and light absorption. Specifically, ZrX2 monolayers intrinsically exhibit a ferroelasticity with an abnormal 120° orientation rotation, possessing a moderate switching barrier of 24-39 meV/atom. Importantly, we observe superior anisotropic light absorption responses on SL ZrX2 in the visible region. Besides, a series of ZrX2-based excitonic solar cells have been proposed, which hold a large power conversion efficiency limit of 12.4-18.7%.

Phonon lasing with an atomic thin membrane resonator at room temperature.

Graphene has been considered as one of the best materials to implement mechanical resonators due to their excellent properties such as low mass, high quality factors and tunable resonant frequencies. Here we report the observation of phonon lasing induced by the photonthermal pressure in a few-layer graphene resonator at room temperature, where the graphene resonator and the silicon substrate form an optical cavity. A marked threshold in the oscillation amplitude and a narrowing linewidth of the vibration mode are observed, which confirms a phonon lasing process in the graphene resonator. Our findings will stimulate the studies on phononic phenomena, help to establish new functional devices based on graphene mechanical resonators, and might find potential applications in classical and quantum sensing fields, as well as in information processing.

Group 11 Transition-Metal Halide Monolayers: High Promises for Photocatalysis and Quantum Cutting.

Recently, two-dimensional (2D) metal halides have triggered an enormous interest for their tunable mechanical, electronic, magnetic, and topological properties, greatly enriching the family of 2D materials. Here, based on first-principles calculations, we report a systematic study of group 11 transition-metal halide MX (M = Cu, Ag, Au; X = Cl, Br, I) monolayers. Among them, CuBr, CuI, AgBr, and AgI monolayers exhibit high thermodynamic, dynamic, and mechanic stability. The four stable monolayers have a direct band gap of ∼3.12-3.36 eV and possess high carrier mobility (∼103 cm2 V-1 s-1), suggestive of future photocatalysts for water splitting applications. What is more, the simulations of optical properties confirm that the stable MX monolayers hold the potential for further applications in ultraviolet optical devices and quantum cutting solar materials.

Quantum random number generator based on single-photon emitter in gallium nitride.

We experimentally demonstrate a real-time quantum random number generator by using a room-temperature single-photon emitter from the defect in a commercial gallium nitride wafer. Due to the brightness of our single-photon emitter, the raw bit generation rate is about 1.8 MHz, and the unbiased bit generation rate is about 420 kHz after the von Neumann's randomness extraction procedure. Our results show that the commercial gallium nitride wafer has great potential for the development of integrated high-speed quantum random number generator devices.

Dispersion independent long-haul photon-counting optical time-domain reflectometry.

Photon-counting optical time-domain reflectometry (PC-OTDR) based on single photon detection is an effective scheme to attain the high spatial resolution for optical fiber fault monitoring. Currently, due to the spatial resolution of PC-OTDR being proportional to the pulse width of a laser beam, short laser pulses are essential for a high spatial resolution. However, short laser pulses have a large bandwidth, which would be widened by the dispersion of fiber, causing inevitable deterioration in the spatial resolution, especially for long-haul fiber links. In this Letter, we propose a scheme of dispersion independent PC-OTDR based on an infinite backscatter technique. Our experimental results-with more than 45 km long fiber-show that the spatial resolution of the PC-OTDR system is independent with the total dispersion of the fiber under test. Our method provides an avenue for developing long-haul PC-OTDR with high performance.