Dandelion (Taraxacum Genus): A Review of Chemical Constituents and Pharmacological Effects.

Dandelion (Taraxacum genus) is a perennial herb belonging to the Asteraceae family. As a well-known and extensively studied genus, dandelion comprises numerous species. Some species have been widely used in both complementary and alternative medicine to clear heat, detoxify, activate blood circulation, dispel stasis, and discharge urine. Multiple pharmacological studies have highlighted its therapeutic potential, including anti-bacterial, anti-oxidant, anti-cancer, and anti-rheumatic activities. Furthermore, bioactive compounds associated with these effects include sesquiterpenoids, phenolic compounds, essential oils, saccharides, flavonoids, sphingolipids, triterpenoids, sterols, coumarins, etc. Based on recent studies about the Taraxacum genus, the present review critically evaluates the current state of dandelion utilization and summarizes the significant roles of dandelion and its constituents in different diseases. We also focus on the reported phytology, chemical composition, pharmacology, and toxicity of dandelion, along with the main possible action mechanisms behind their therapeutic activities. Meanwhile, the challenges and future directions of the Taraxacum genus are also prospected in this review, thus highlighting its pharmaceutical research and practical clinical applications.

[Exploration of anatomical location of Baliao points of adult female].

Fifteen morphologically and structurally complete sacrum specimens of normotrophic adult females were choosen. Distances between posterior sacral foramina and median sacral crest,and between the cores of adjacent posterior sacral foramina were measured. Then statistical analysis was done so as to provide objective anatomical evidence for the surface localization of Baliao points. The average distance between Shangliao (BL 31) and median sacral crest was (2.08 ± 0.19) cm; and the average distance between Ciliao (BL 32) and median sacral crest was (1.75 ± 0.12) cm; Zhongliao (BL 33), (1.59 ± 0.15) cm; Xialiao (BL 34), (1.56 ± 0.15) cm. And the distance of S1-S2 was (2.36 ± 0.31) cm averagely; S2-S3, (1.98 ± 0.23) cm; S3-S4, (1.71 ± 0.18) cm. It is considered that to locate Baliao points, Ciliao (BL 32) needs to be ascertained firstly.

Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method.

Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-µm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate.

Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD.

Well-aligned tilted Zn-doped InN nanorods have been grown successfully on r-plane sapphire in a horizontal metal-organic chemical vapor deposition system. All of the nanorods are symmetrically tilted in two opposite directions. X-ray diffraction and transmission electron microscopy measurements show that the nanorods are single-crystalline and have exactly the same epitaxial orientation as the a-plane InN film. The nanorod has a new cross sectional shape of an axial symmetry pentagon and the axis of symmetry is the c-axis of the crystal. Zn dopant plays a crucial role in the growth progress, being an important factor in controlling the morphology of the InN nanomaterials and their properties.