ABSTRACT
Developing an effective and efficient recycling process for marine debris (MD) is one of the most urgent issues to maintain environmental sustainability on Earth. However, restricted storage capacities and secondary pollution (e.g., microbial adhesion, putrefaction) limit the proper MD recycling. Here, we proposed a complete eco-friendly low-temperature MD pulverizing system that utilizes excessive liquefied natural gas (LNG) cold energy (LCE) in an LNG propulsion ship to improve the efficiency and effectiveness of MD recycling. The prototype design of the low-temperature pulverization (LTP) system showed that consumable refrigerant (liquid nitrogen) up to 2831 kg per hour could be substituted. Furthermore, with a 20% ship output, 1250 kg of MD could be treated with 363 kg of additional refrigerant. In addition, LTP systems utilizing LCE could increase the storage capacity by more than 10 times compared to bulk MD while minimizing the required energy consumption. To determine the feasibility of LTP for MD recycling, four types of plastics obtained from actual MD from a coastal area in Busan, Korea were classified and tested.
ABSTRACT
Amorphization using impurity doping is a promising approach to improve the thermoelectric properties of tin-doped indium oxide (ITO) thin films. However, an abnormal phenomenon has been observed where an excessive concentration of doped atoms increases the lattice thermal conductivity (κl). To elucidate this paradox, we propose two hypotheses: (1) metal hydroxide formation due to the low bond enthalpy energy of O and metal atoms and (2) localized vibration due to excessive impurity doping. To verify these hypotheses, we doped ZnO and CeO2, which have low and high bond enthalpies with oxygen, respectively, into the ITO thin film. Regardless of the bond enthalpy energy, the κl values of the two thin films increased due to excessive doping. Fourier transform infrared spectroscopy was conducted to determine the metal hydroxide formation. There was no significant difference in wave absorbance originating from the OH stretching vibration. Therefore, the increase in κl due to the excessive doping was due to the formation of localized regions in the thin film. These results could be valuable for various applications using other transparent conductive oxides and guide the control of the properties of thin films.
ABSTRACT
Transparent a-IGZO (In-Ga-Zn-O) films have been actively studied for use in the fabrication of high-quality TFTs. In this study, a-IGZO films and a-IGZO/ITO double layers were deposited by DC magnetron sputtering under various oxygen flow rates. The a-IGZO films showed an amorphous structure up to 500 degrees C. The deposition rate of these films decreased with an increase in the amount of oxygen gas. The amount of indium atoms in the film was confirmed to be 11.4% higher than the target. The resistivity of double layer follows the rules for parallel DC circuits The maximum Hall mobility of the a-IGZO/ITO double layers was found to be 37.42 cm2/V x N s. The electrical properties of the double layers were strongly dependent on their thickness ratio. The IGZO/ITO double layer was subjected to compressive stress, while the ITO/IGZO double layer was subjected to tensile stress. The bending tolerance was found to depend on the a-IGZO thickness.
ABSTRACT
TiNx films were successfully deposited by DC reactive magnetron sputtering superimposed EMF system without substrate heating. In case of DCMS 400 W+ EMF 25 W, electrical property, reflectance and crystallinity of the TiN films were clearly improved by the enhancement of nitrification. The lowest sheet resistance of 2.9 Ω/⟂ (resistivity 5.8 x 10(-5) Ωcm) was observed for the film deposited at F(N)2: 16%. Mixture phases of the (111) plane and (200) plane showed lower resistivity than only (200) single phase. Therefore it is confirmed that introduction of EMF system is promising technology to deposit TiN film.
