Effects of the material properties and thickness on the minimum formable radius in the subtle feature forming process.

The subtle feature geometry also called a feature line, is considered an important geometric characteristic of automotive outer panels. The influences of material properties and thickness on the radius of curvature of subtle features were investigated in this study. First, the stamping process was simplified to a combined forming process between tensile and bending deformation. Subsequently, test materials, namely, 180B2, 210B2, CR2, CR3, and CR4, with various thickness values were adopted in the finite element analysis and experiments. In addition, the radius of curvature with respect to the material, thickness, punch radius, and punch angle was studied. The simulation results were compared with the experimental results for verification. From this comparison, it was found that the simulation results were in good agreement with the experimental data. Finally, the forming characteristics of the subtle feature-forming process were investigated to determine the effects of the material properties and thickness on the radius of curvature. The reason for the minimum formable radius when the radius of the punch was zero was studied. The results showed that, as the material thickness increased, more concentrated deformation occurred in the central region. In contrast, the radius of curvature of the subtle features increased as the thickness of the central region decreased. Similarly, decreased n-value results were identified for the same reason as the increased radius of curvature.

Electrically Driven Sub-Micrometer Light-Emitting Diode Arrays Using Maskless and Etching-Free Pixelation.

For decades, group-III-nitride-based light-emitting diodes (LEDs) have been regarded as a light emitting source for future displays by virtue of their novel properties such as high efficiency, brightness, and stability. Nevertheless, realization of high pixel density displays is still challenging due to limitations of pixelation methods. Here, a maskless and etching-free micro-LED (µLED) pixelation method is developed via tailored He focused ion beam (FIB) irradiation technique, and electrically driven sub-micrometer-scale µLED pixel arrays are demonstrated. It is confirmed that optical quenching and electrical isolation effects are simultaneously induced at a certain ion dose (≈1014 ions cm-2 ) without surface damage. Furthermore, highly efficient µLED pixel arrays at sub-micrometer scale (square pixel, 0.5 µm side length) are fabricated. Their pixelation and brightness are verified by various optical measurements such as cathodo-, photo-, and electroluminescence. It is expected that the FIB-induced optical quenching and electrical isolation method can pioneer a new defect engineering technology not only for µLED fabrication, but also for sub-micrometer-scale optoelectronic devices.