Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics.

Silicon photonics is emerging as a competitive platform for electronic-photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. In this paper, we present a comprehensive theoretical study of GeSn vertical p-i-n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2 µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier collection path, thereby allowing for the simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2 µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2 µm wavelength band. The results indicate that the performance of the GeSn WGPD has a strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with a 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12 × 1010 cmHz½W-1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.

Non-Hermitian Sensing in Photonics and Electronics: A Review.

Recently, non-Hermitian Hamiltonians have gained a lot of interest, especially in optics and electronics. In particular, the existence of real eigenvalues of non-Hermitian systems has opened a wide set of possibilities, especially, but not only, for sensing applications, exploiting the physics of exceptional points. In particular, the square root dependence of the eigenvalue splitting on different design parameters, exhibited by 2 × 2 non-Hermitian Hamiltonian matrices at the exceptional point, paved the way to the integration of high-performance sensors. The square root dependence of the eigenfrequencies on the design parameters is the reason for a theoretically infinite sensitivity in the proximity of the exceptional point. Recently, higher-order exceptional points have demonstrated the possibility of achieving the nth root dependence of the eigenfrequency splitting on perturbations. However, the exceptional sensitivity to external parameters is, at the same time, the major drawback of non-Hermitian configurations, leading to the high influence of noise. In this review, the basic principles of PT-symmetric and anti-PT-symmetric Hamiltonians will be shown, both in photonics and in electronics. The influence of noise on non-Hermitian configurations will be investigated and the newest solutions to overcome these problems will be illustrated. Finally, an overview of the newest outstanding results in sensing applications of non-Hermitian photonics and electronics will be provided.

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density.

We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.

Design of an on-Chip Room Temperature Group-IV Quantum Photonic Chem/Bio Interferometric Sensor Based on Parity Detection.

We propose and analyze three Si-based room-temperature strip-guided "manufacturable" integrated quantum photonic chem/bio sensor chips operating at wavelengths of 1550 nm, 1330 nm, and 640 nm, respectively. We propose design rules that will achieve super-sensitivity (above the classical limit) by means of mixing between states of coherent light and single-mode squeezed-light. The silicon-on-insulator (SOI), silicon-on-sapphire (SOS), and silicon nitride-on-SiO2-on Si (SiN) platforms have been investigated. Each chip is comprised of photonic building blocks: a race-track resonator, a pump filter, an integrated Mach-Zehnder interferometric chem/bio sensor, and a photonic circuit to perform parity measurements, where our homodyne measurement circuit avoids the use of single-photon-counting detectors and utilizes instead conventional photodetectors. A combination of super-sensitivity with super-resolution is predicted for all three platforms to be used for chem/bio sensing applications.

GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2 µm wavelength band.

The 2 µm wavelength band has recently gained increased attention for potential applications in next-generation optical communication. However, it is still challenging to achieve effective photodetection in the 2 µm wavelength band using group-IV-based semiconductors. Here we present an investigation of GeSn resonant-cavity-enhanced photodetectors (RCEPDs) on silicon-on-insulator substrates for efficient photodetection in the 2 µm wavelength band. Narrow-bandgap GeSn alloys are used as the active layer to extend the photodetection range to cover the 2 µm wavelength band, and the optical responsivity is significantly enhanced by the resonant cavity effect as compared to a reference GeSn photodetector. Temperature-dependent experiments demonstrate that the GeSn RCEPDs can have a wider photodetection range and higher responsivity in the 2 µm wavelength band at higher temperatures because of the bandgap shrinkage. These results suggest that our GeSn RCEPDs are promising for complementary metal-oxide-semiconductor-compatible, efficient, uncooled optical receivers in the 2 µm wavelength band for a wide range of applications.

Stimulated Brillouin Scattering in an AlGaN Photonics Platform Operating in the Visible Spectral Range.

We present Stimulated Brillouin Scattering (SBS) process in AlGaN integrated photonic waveguides. The wide bandgap of this III-Nitride material platform allows operating at visible wavelengths enabling large Stokes shifts. For this study, we employ a multiphysics approach that includes electric-photoelastic, magnetic-photoelastic, material interface displacement effects, and for optimal waveguide dimensions to find the Brillouin-active acoustic modes involved in the SBS process. The SBS power gain and the Stokes frequency shift are investigated for both backward and forward scattering processes, and it is shown that stokes shift larger than 50 GHz with high gain are achievable. Moreover, a parametric analysis is presented in order to demonstrate the possibility of realizing Brillouin lasers operating at blue wavelengths.

Optically pumped lasing at 3 µm from compositionally graded GeSn with tin up to 22.3.

The recent demonstration of the GeSn laser opened a promising route towards the monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn content is highly desirable to enhance the emission efficiency and to cover longer wavelength. This Letter reports optically pumped edge-emitting GeSn lasers operating at 3 µm, whose device structure featured Sn compositionally graded with a maximum Sn content of 22.3%. By using a 1950-nm laser pumping in comparison with a 1064-nm pumping, the local heating and quantum defect were effectively reduced, which improved laser performance in terms of higher maximum lasing temperature and lower threshold.

Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement.

The GeSn-based quantum wells (QWs) have been investigated recently for the development of efficient GeSn emitters. Although our previous study indicated that the direct bandgap well with type-I band alignment was achieved, the demonstrated QW still has insufficient carrier confinement. In this work, we report the systematic study of light emission from the Ge0.91Sn0.09/Ge0.85Sn0.15/Ge0.91Sn0.09 double QW structure. Two double QW samples, with the thicknesses of Ge0.85Sn0.15 well of 6 and 19 nm, were investigated. Band structure calculations revealed that both samples feature type-I band alignment. Compared with our previous study, by increasing the Sn composition in GeSn barrier and well, the QW layer featured increased energy separation between the indirect and direct bandgaps towards a better direct gap semiconductor. Moreover, the thicker well sample exhibited improved carrier confinement compared to the thinner well sample due to lowered first quantized energy level in the Γ valley. To identify the optical transition characteristics, photoluminescence (PL) study using three pump lasers with different penetration depths and photon energies was performed. The PL spectra confirmed the direct bandgap well feature and the improved carrier confinement, as significantly enhanced QW emission from the thicker well sample was observed.

Tunable optical-microwave filters optimized for 100 MHz resolution.

New continuously tunable RF-spectrum analyzers, RF receivers, and RF signal generators are proposed and analyzed for the silicon-on-insulator integrated-photonic platform at the ~1550 nm wavelength. These RF system-on-a-chip applications are enabled by a new narrowband 2x2 Mach-Zehnder interferometer (MZI) tuned filters for reconfigurable multiplexing, demultiplexing and RF channel selection. The filter can be optimized for ~100 MHz 3-dB bandwidth (BW) by utilizing N closely coupled Bragg-grating resonators to form one effective waveguide resonator in the single-mode silicon nanowire used for each MZI arm. The number of periods M within each individual resonator is selected to engineer BW in the 0.1 to 1 GHz range. Butterworth design is employed. Continuous tuning of the 100 MHz-BW devices over 18.6 GHz has been simulated by using local micron-scale thermo-optical heater stripes on the MZI arms with a temperature rise from 0 to 48K. For the case of N = 3 and 100-nm silicon side teeth, some representative performance predictions are: insertion loss (IL) = -10.7 dB, BW = 80.5 MHz and L = 113 µm for M = 58; while IL = -0.74 dB, BW = 1210 MHz and L = 86 µm for M = 44.

Reconfigurable optical-microwave filter banks using thermo-optically tuned Bragg Mach-Zehnder devices.

A new reconfigurable, tunable on-chip optical filter bank is proposed and analyzed for the silicon-on-insulator platform at the ~1550 nm wavelength. The waveguided bank is a cascade connection of 2 x 2 Mach-Zehnder interferometer (MZI) filters. An identical standing-wave resonator is situated in each MZI "arm." Using the thermo-optic (TO) effect to perturb this waveguide's index, the TO heater stripes provide continuous tuning of the filter by shifting the resonance smoothly along the wavelength axis. To reconfigure and program the cascade array, a broadband 2 x 2 MZI-related switch is inserted between adjacent filters. The novel TO switch, described here, can provide either single or double interconnection of 2 x 2 filters. The filter resonator is a new in-guide array of N closely coupled phase-shifted Bragg-grating resonators that provide one resonant spectral profile with 5 to 100 GHz bandwidth. The length of each grating cavity in the N group is chosen according to the Butterworth filter technique, and this gives high peak transmission for the composite. The predicted spectral profiles of a three-stage cascade show two-or-three peaks, or two-or-three notches with movable wavelength-locations as well as tunable wavelength-separations between those features. A tunable notch within a wider movable passband is also feasible. Potential applications include microwave photonics, wavelength-selective systems, optical spectroscopy and optical sensing.

Mach-Zehnder crossbar switching and tunable filtering using N-coupled waveguide Bragg resonators.

This theoretical modeling-and-simulation paper presents designs and projected performance of ~1500-nm silicon-on-insulator 2 x 2 Mach-Zehnder interferometer (MZI) optical crossbar switches and tunable filters that are actuated by thermo-optical (TO) means. A TO heater stripe is assumed to be on the top of each waveguided arm in the interferometer. Each strip-waveguide arm contains an inline set of N-fold coupled, phase-shifted Bragg-grating resonators. To implement accurate and realistic designs, a mixed full-vectorial mathematical model based upon the finite-element, coupled-mode, and transfer-matrix approaches was employed. The Butterworth-filter technique for grating length and weighting was used. The resulting narrowband waveguide-transmission spectral shape was better-than-Lorentzian because of its steeper sidewalls (faster rolloff). The metrics of crossbar switching, insertion loss (IL) and crosstalk (CT), were evaluated for choices of grating strength and TO-induced change in the grating-waveguide refractive index. The predicted ILs and CTs were quite superior to those cited in the literature for experimental and theoretical MZI devices based upon silicon nanobeam resonators. This was true for the Type-I and Type-II resonator addressing discussed here. Finally, we examined the TO-tunable composite filter profiles that are feasible by connecting two or more Type-I MZIs in an optical series arrangement. A variety of narrow filter shapes, tunable over ~2 nm, was found.

Broadband biphoton generation and statistics of quantum light in the UV-visible range in an AlGaN microring resonator.

We present a physical investigation on the generation of correlated photon pairs that are broadly spaced in the ultraviolet (UV) and visible spectrum on a AlGaN/AlN integrated photonic platform which is optically transparent at these wavelengths. Using spontaneous four wave mixing (SFWM) in an AlGaN microring resonator, we show design techniques to satisfy the phase matching condition between the optical pump, the signal, and idler photon pairs, a condition which is essential and is a key hurdle when operating at short wavelength due to the strong normal dispersion of the material. Such UV-visible photon pairs are quite beneficial for interaction with qubit ions that are mostly in this wavelength range, and will enable heralding the photon-ion interaction. As a target application example, we present the systematic AlGaN microresonator design for generating signal and idler photon pairs using a blue wavelength pump, while the signal appears at the transition of ytterbium ion (171Yb+, 369.5 nm) and the idler appears in the far blue or green range. The photon pairs have minimal crosstalk to the pump power due to their broad spacing in spectral wavelength, thereby relaxing the design of on-chip integrated filters for separating pump, signal and idler.

Investigation of Electric Field Induced Mixing in Silicon Micro Ring Resonators.

In this paper we present a detailed theoretical investigation of the electric field induced mixing effect, in which the up and down frequency-conversion processes are obtained by inducing an effective second order susceptibility via the periodic spatial distribution of reversed biased p-i-n junctions. The possibility of realizing a frequency generation process within an integrated microring resonator is demonstrated here, by simulations, in the silicon on insulator platform. Furthermore, general physical features have been investigated by means of a comparative analysis of the frequency generation performance as a function of the input pump power, the linear and nonlinear losses, and the coupling factors. A conversion efficiency of 627.5 %/W has been obtained for the second harmonic generation process. Therefore, an improvement of 4 to 50 times with respect to the straight waveguides is achieved, depending on the cavity ring radius. Finally, for the up/down conversion, from telecom idler to mid-IR and from Mid-IR to telecom signal, respectively, an efficiency of 85.9%/W and 454.4 %/W has been obtained in the silicon microring resonator, respectively.

Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

Dispersion of nonresonant third-order nonlinearities in Silicon Carbide.

In this paper we present a physical discussion of the indirect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure. Phonon-electron interaction is analyzed by finding the phonon features involved in the process as depending upon the crystal symmetry. Consistent physical assumptions about the phonon-electron scattering mechanisms are proposed in order to give a mathematical formulation to predict the wavelength dispersion of TPA and the Kerr nonlinear refractive index n2. The TPA spectrum is investigated including the effects of band nonparabolicity and the influence of the continuum exciton. Moreover, a parametric analysis is presented in order to fit the experimental measurements. Finally, we have estimated the n2 in a large wavelength range spanning the visible to the mid-IR region.

Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys.

Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct band gap semiconductors with applications in electronics and optoelectronics. In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed because of the high electron drift mobility, while the SiGeSn system can be constructed using CMOS-compatible techniques to realize lasers, LED, and photodetectors. The wide Si, Ge and Sn transparencies allow the use of binary and ternary alloys extended to mid-IR wavelengths, where nonlinearities can also be employed. However, neither theoretical or experimental predictions of nonlinear features in SiGeSn alloys are reported in the literature. For the first time, a rigorous and detailed physical investigation is presented to estimate the two photon absorption (TPA) coefficient and the Kerr refractive index for the SiGeSn alloy up to 12 µm. The TPA spectrum, the effective TPA wavelength cut-off, and the Kerr nonlinear refractive index have been determined as a function of alloy compositions. The promising results achieved can pave the way to the demonstration of on-chip nonlinear-based applications, including mid-IR spectrometer-on-a-chip, all-optical wavelength down/up-conversion, frequency comb generation, quantum-correlated photon-pair source generation and supercontinuum source creation, as well as Raman lasing.

Investigation of mid-infrared second harmonic generation in strained germanium waveguides.

In this paper we present a detailed theoretical investigation of second harmonic generation in strained germanium waveguides operating at the mid infrared pump wavelength of 4 µm. The effective second order susceptibility has been estimated through a multiphysics approach considering the residual stress of the SiNx cladding film. Furthermore, general physical features have been investigated by means of a comparative analysis of SHG performance as a function of input pump power, linear and nonlinear phase mismatching, effective recombination carrier lifetime, and temperature, taking into account both continuous and pulsed regimes. Finally, periodically poled germanium devices have been explored with the aim to improve the SHG efficiency. In the same operative conditions, efficiencies of 0.6% and 0.0018% have been obtained in poled and not-poled waveguides, respectively.

Reconfigurable lattice mesh designs for programmable photonic processors.

We propose and analyse two novel mesh design geometries for the implementation of tunable optical cores in programmable photonic processors. These geometries are the hexagonal and the triangular lattice. They are compared here to a previously proposed square mesh topology in terms of a series of figures of merit that account for metrics that are relevant to on-chip integration of the mesh. We find that that the hexagonal mesh is the most suitable option of the three considered for the implementation of the reconfigurable optical core in the programmable processor.

Theoretical demonstration of Brillouin lasing effect in racetrack resonators based on germanium waveguides in the mid-infrared.

In this Letter, we present a theoretical investigation of integrated racetrack Brillouin lasers based on germanium waveguides that are buried in silicon nitride and operate at a wavelength of 4 µm. General design equations in a steady-state regime have been carried out to determine the threshold power and the emitted Stokes power as a function of the resonance mismatch and coupling factor. The pulling effect as induced by the Brillouin gain dispersion and the pushing effects originated by SPM and XPM effects have been accurately investigated to predict the lasing frequency.