A gas cell apparatus for measuring charge exchange cross sections with multicharged ions.

A gas cell apparatus to measure charge exchange cross sections for charge state- and energy-resolved ion beams with neutrals is described. The design features a short well-defined interaction region required for beams of multicharged ions with high cross sections. Our method includes measuring the beam transmission at four different neutral pressures and extracting the cross section from the slope of a beam loss vs pressure plot. The design and procedure were tested for Ar+ interacting with neutral Ar gas over the incident ion energy range of 1.0-5.0 keV. The charge exchange cross sections agree well with previous complementary measurement techniques.

Kinetic energy offsets for multicharged ions from an electron beam ion source.

Using a retarding field analyzer, we have measured offsets between the nominal and measured kinetic energy of multicharged ions extracted from an electron beam ion source (EBIS). By varying source parameters, a shift in ion kinetic energy was attributed to the trapping potential produced by the space charge of the electron beam within the EBIS. The space charge of the electron beam depends on its charge density, which in turn depends on the amount of negative charge (electron beam current) and its velocity (electron beam energy). The electron beam current and electron beam energy were both varied to obtain electron beams of varying space charge and these were related to the observed kinetic energy offsets for Ar4+ and Ar8+ ion beams. Knowledge of these offsets is important for studies that seek to utilize slow, i.e., low kinetic energy, multicharged ions to exploit their high potential energies for processes such as surface modification. In addition, we show that these offsets can be utilized to estimate the effective radius of the electron beam inside the trap.

Charge state dependent energy deposition by ion impact.

We report on a measurement of craters in thin dielectric films formed by Xe(Q+) (26 ≤ Q ≤ 44) projectiles. Tunnel junction devices with ion-irradiated barriers were used to amplify the effect of charge-dependent cratering through the exponential dependence of tunneling conductance on barrier thickness. Electrical conductance of a crater σ(c)(Q) increased by 4 orders of magnitude (7.9 × 10(-4) µS to 6.1 µS) as Q increased, corresponding to crater depths ranging from 2 to 11 Å. By employing a heated spike model, we determine that the energy required to produce the craters spans from 8 to 25 keV over the investigated charge states. Considering energy from preequilibrium nuclear and electronic stopping as well as neutralization, we find that at least (27 ± 2)% of available projectile neutralization energy is deposited into the thin film during impact.

Energy dissipation of highly charged ions on Al oxide films.

Slow highly charged ions (HCIs) carry a large amount of potential energy that can be dissipated within femtoseconds upon interaction with a surface. HCI-insulator collisions result in high sputter yields and surface nanofeature creation due to strong coupling between the solid's electronic system and lattice. For HCIs interacting with Al oxide, combined experiments and theory indicate that defect mediated desorption can explain reasonably well preferential O atom removal and an observed threshold for sputtering due to potential energy. These studies have relied on measuring mass loss on the target substrate or probing craters left after desorption. Our approach is to extract highly charged ions onto the Al oxide barriers of metal-insulator-metal tunnel junctions and measure the increased conductance in a finished device after the irradiated interface is buried under the top metal layer. Such transport measurements constrain dynamic surface processes and provide large sets of statistics concerning the way individual HCI projectiles dissipate their potential energy. Results for Xe(q +) for q = 32, 40, 44 extracted onto Al oxide films are discussed in terms of postirradiation electrical device characteristics. Future work will elucidate the relationship between potential energy dissipation and tunneling phenomena through HCI modified oxides.

Towards hot electron mediated charge exchange in hyperthermal energy ion-surface interactions.

We have made Na (+) and He (+) ions incident on the surface of solid state tunnel junctions and measured the energy loss due to atomic displacement and electronic excitations. Each tunnel junction consists of an ultrathin film metal-oxide-semiconductor device which can be biased to create a band of hot electrons useful for driving chemical reactions at surfaces. Using the binary collision approximation and a nonadiabatic model that takes into account the time-varying nature of the ion-surface interaction, the energy loss of the ions is reproduced. The energy loss for Na (+) ions incident on the devices shows that the primary energy loss mechanism is the atomic displacement of Au atoms in the thin film of the metal-oxide-semiconductor device. We propose that neutral particle detection of the scattered flux from a biased device could be a route to hot electron mediated charge exchange.

A hyperthermal energy ion beamline for probing hot electron chemistry at surfaces.

An ultrahigh vacuum ion beamline and chamber have been assembled to produce hyperthermal (<400 eV) energy ions for studying hot electron chemistry at surfaces. The specific design requirements for this modified instrument were chosen to enable the exposure of a metal-oxide-semiconductor (MOS) device to monoenergtic, well-collimated beams of alkali ions while monitoring both the scattered beam flux and the device characteristics. Our goal is to explore the role that hot electrons injected toward the MOS device surface play in the neutralization of scattered ions. To illustrate the functionality of our system, we present energy-resolved spectra for Na+, K+, and Cs+ ions scattered from the surface of a Ag(001) single crystal for a range of incident energies. In addition, we show MOS device current-voltage characteristics measured in situ in a new rapid-turnaround load lock and sample translation stage.

Vacancy island creation and coalescence using automated scanning tunneling microscopy.

We demonstrate that scanning tunneling microscope tip-surface crash events can be utilized as an efficient means for the creation of predefined island configurations for diffusion studies. Using this method, islands of varying size can be created and placed in close proximity, increasing the probability of initiating and observing coalescence events. Data obtained from crash initiated events on a Ag(111) surface are presented. Relaxation time exponents extracted from these data confirm that our method gives results consistent with previous, sputter-obtained island coalescence studies. We also describe an instrument-control routine developed for these measurements that utilizes commercial imaging and off-the-shelf automation software to automate the tracking of islands or other features by the microscope.

Thermally enhanced neutralization in hyperthermal energy ion scattering.

Neutralization probabilities are presented for hyperthermal energy Na+ ions scattered from a Cu(001) crystal as a function of surface temperature and scattered velocity. A large enhancement in neutralization is observed as the temperature is increased. Velocity-dependent charge transfer regimes are probed by varying the incident energy, with the most prominent surface temperature effects occurring at the lowest energies. The data agree well with results obtained from a model based on the Newns-Anderson Hamiltonian, where the effects of both temperature and velocity are incorporated.