ABSTRACT
We present insights into the nature of structural heterogeneities in liquid water by characterizing the empty space within the hydrogen bond network. Using molecular dynamics simulations, we show that density fluctuations create regions of empty space characterized by a diverse morphology - from spherical to fractal-like voids. These voids allow for the identification of low and high density patches of the liquid, encompassing short (0.3-0.5 nm) as well as long (1-2 nm) length-scales. In addition, we show that the formation of these patches is coupled to collective fluctuations involving the topology of hydrogen-bonded rings of water molecules. In particular, water molecules in the high density patches tend to be slightly more tetrahedral - which is consistent with the predictions of the hydrophobic effect.
ABSTRACT
The Ge2Sb2Te5 compound is of interest for applications in phase change non-volatile memories. First-principles calculations of phonon dispersion relations and electron-phonon coupling constant provide an estimate of the electron-phonon contribution to the thermal boundary resistance at the interfaces of Ge2Sb2Te5 with dielectrics (silica) and metal electrodes (Al and TiN). The diffuse mismatch model including full phononic dispersion has been used to compute the phononic contribution to the thermal boundary resistance. The calculated value of the electron-phonon contribution to the TBR at 300 K of about 14 m(2)K GW(-1) would dominate the TBR at the interfaces of hexagonal Ge2Sb2Te5 with the surrounding dielectrics and metals considered here once interdiffusion at the boundaries could be minimized.
ABSTRACT
Phonon dispersion relations and infrared and Raman spectra of crystalline Sb(2)Te(3) were computed within density functional perturbation theory. Overall good agreement with experiments is obtained, which allows us to assign the Raman and IR peaks to specific phonons.
ABSTRACT
Phonons at the Γ point and the Raman spectrum of the hexagonal Ge(2)Sb(2)Te(5) were computed within density functional perturbation theory. The three different stackings of the Ge/Sb planes proposed in the experimental literature were considered. The theoretical Raman spectrum is similar for the three stackings with a marginally better agreement with experiments for the structure proposed by Matsunaga et al (2004 Acta Crystallogr. B 60 685) which assumes a disorder in Ge/Sb site occupation. Although the large broadening of the experimental Raman peaks prevents discriminating among the different stackings, the assignment of the Raman peaks to specific phonons is possible because the main features of the spectrum are rather insensitive to the actual distribution of atoms in the Sb/Ge sublattices. On the basis of the energetics (including configurational entropy) two stackings seem plausible candidates for GST, but only the mixed stacking by Matsunaga et al reproduces the spread of Ge/Sb-Te bond lengths measured experimentally.
