Thermal Imaging of Block Copolymers with Sub-10 nm Resolution.

Thermal silicon probes have demonstrated their potential to investigate the thermal properties of various materials at high resolution. However, a thorough assessment of the achievable resolution is missing. Here, we present a probe-based thermal-imaging technique capable of providing sub-10 nm lateral resolution at a sub-10 ms pixel rate. We demonstrate the resolution by resolving microphase-separated PS-b-PMMA block copolymers that self-assemble in 11 to 19 nm half-period lamellar structures. We resolve an asymmetry in the heat flux signal at submolecular dimensions and assess the ratio of heat flux into both polymers in various geometries. These observations are quantitatively compared with coarse-grained molecular simulations of energy transport that reveal an enhancement of transport along the macromolecular backbone and a Kapitza resistance at the internal interfaces of the self-assembled structure. This comparison discloses a tip-sample contact radius of a ≈ 4 nm and identifies combinations of enhanced intramolecular transport and Kapitza resistance.

Optical Fourier surfaces.

Gratings1 and holograms2 use patterned surfaces to tailor optical signals by diffraction. Despite their long history, variants with remarkable functionalities continue to be developed3,4. Further advances could exploit Fourier optics5, which specifies the surface pattern that generates a desired diffracted output through its Fourier transform. To shape the optical wavefront, the ideal surface profile should contain a precise sum of sinusoidal waves, each with a well defined amplitude, spatial frequency and phase. However, because fabrication techniques typically yield profiles with at most a few depth levels, complex 'wavy' surfaces cannot be obtained, limiting the straightforward mathematical design and implementation of sophisticated diffractive optics. Here we present a simple yet powerful approach to eliminate this design-fabrication mismatch by demonstrating optical surfaces that contain an arbitrary number of specified sinusoids. We combine thermal scanning-probe lithography6-8 and templating9 to create periodic and aperiodic surface patterns with continuous depth control and sub-wavelength spatial resolution. Multicomponent linear gratings allow precise manipulation of electromagnetic signals through Fourier-spectrum engineering10. Consequently, we overcome a previous limitation in photonics by creating an ultrathin grating that simultaneously couples red, green and blue light at the same angle of incidence. More broadly, we analytically design and accurately replicate intricate two-dimensional moiré patterns11,12, quasicrystals13,14 and holograms15,16, demonstrating a variety of previously unattainable diffractive surfaces. This approach may find application in optical devices (biosensors17, lasers18,19, metasurfaces4 and modulators20) and emerging areas in photonics (topological structures21, transformation optics22 and valleytronics23).

Conversion of a Patterned Organic Resist into a High Performance Inorganic Hard Mask for High Resolution Pattern Transfer.

Polyphthalaldehyde is a self-developing resist material for electron beam and thermal scanning probe lithography (t-SPL). Removing the resist in situ (during the lithography process itself) simplifies processing and enables direct pattern inspection, however, at the price of a low etch resistance of the resist. To convert the material into a etch resistant hard mask, we study the selective cyclic infiltration of trimethyl-aluminum (TMA)/water into polyphthalaldehyde. It is found that TMA diffuses homogeneously through the resist, leading to material expansion and formation of aluminum oxide concurrent to the exposure to water and the degradation of the polyphthalaldehyde polymer. The plasma etch resistance of the infiltrated resist is significantly improved, as well as its stability. Using a silicon substrate coated with 13 nm silicon nitride and 7 nm cross-linked polystyrene, high resolution polyphthalaldehyde patterning is performed using t-SPL. After TMA/H2O infiltration, it is demonstrated that pattern transfer into silicon can be achieved with good fidelity for structures as small as 10 nm, enabling >10× amplification and low surface roughness. The presented results demonstrate a simplified use of polyphthalaldehyde resist, targeting feature scales at nanometer range, and suggest that trimethyl-aluminum infiltration can be applied to other resist-based lithography techniques.

Control of the interaction strength of photonic molecules by nanometer precise 3D fabrication.

Applications for high resolution 3D profiles, so-called grayscale lithography, exist in diverse fields such as optics, nanofluidics and tribology. All of them require the fabrication of patterns with reliable absolute patterning depth independent of the substrate location and target materials. Here we present a complete patterning and pattern-transfer solution based on thermal scanning probe lithography (t-SPL) and dry etching. We demonstrate the fabrication of 3D profiles in silicon and silicon oxide with nanometer scale accuracy of absolute depth levels. An accuracy of less than 1nm standard deviation in t-SPL is achieved by providing an accurate physical model of the writing process to a model-based implementation of a closed-loop lithography process. For transfering the pattern to a target substrate we optimized the etch process and demonstrate linear amplification of grayscale patterns into silicon and silicon oxide with amplification ratios of ∼6 and ∼1, respectively. The performance of the entire process is demonstrated by manufacturing photonic molecules of desired interaction strength. Excellent agreement of fabricated and simulated structures has been achieved.

Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography.

High-resolution lithography often involves thin resist layers which pose a challenge for pattern characterization. Direct evidence that the pattern was well-defined and can be used for device fabrication is provided if a successful pattern transfer is demonstrated. In the case of thermal scanning probe lithography (t-SPL), highest resolutions are achieved for shallow patterns. In this work, we study the transfer reliability and the achievable resolution as a function of applied temperature and force. Pattern transfer was reliable if a pattern depth of more than 3 nm was reached and the walls between the patterned lines were slightly elevated. Using this geometry as a benchmark, we studied the formation of 10-20 nm half-pitch dense lines as a function of the applied force and temperature. We found that the best pattern geometry is obtained at a heater temperature of ∼600 °C, which is below or close to the transition from mechanical indentation to thermal evaporation. At this temperature, there still is considerable plastic deformation of the resist, which leads to a reduction of the pattern depth at tight pitch and therefore limits the achievable resolution. By optimizing patterning conditions, we achieved 11 nm half-pitch dense lines in the HM8006 transfer layer and 14 nm half-pitch dense lines and L-lines in silicon. For the 14 nm half-pitch lines in silicon, we measured a line edge roughness of 2.6 nm (3σ) and a feature size of the patterned walls of 7 nm.