ABSTRACT
We have developed a micro-controller based Deep Level Transient Spectroscopy (DLTS) system to identify the deep-level defects in semiconductors. It consists of Arduino-Due, a capacitance meter, and interface circuits. In addition, we have also developed the algorithms needed for the entire signal processing. It is not limited to Arduino-Due but can be implemented using other micro-controllers also. We have used Arduino-Due to generate the filling pulse and monitor the capacitance, temperature, data acquisition, timing control, and signal processing. The sequence of generating the filling pulse, reading the data, and signal processing is controlled digitally rather than by analog sampling circuits and timers. The minimum pulse width generated using Arduino-Due is 50 ns; the pulse width generation depends on various hardware and software parameters and their integration. The resolution in reading the data is 0.8 mV/unit. The time delays in reading the data are appropriately taken care of in the system. The whole experiment can be completed in a single temperature cycle within 2-3 h. The system is simple, inexpensive, in an easy-to-use platform, and less time-consuming; minimizes possible errors; and improves accuracy. The measurements using the "micro-controller based DLTS system" are verified by fabricating (Au) gold-doped silicon (Si) p-n junction samples (Au is a well-understood defect in Si). Using the Arduino-Due based DLTS system, we calculated the energy, the capture cross section, and the concentration of trap levels. The results are in good agreement with the literature, indicating the versatility of the system.
ABSTRACT
Narrow bandgap (<0.5 eV) colloidal semiconductor nanocrystals (e.g. mercury chalcogenides) provide practical platforms for next generation short wave infrared, mid wave infrared and long wave infrared optoelectronic devices. Until now, most of the efforts in the field of infrared active nanocrystals have been taken on synthesizing nanocrystals, determining quantum states and building different geometries for optoelectronic devices. However, studies on interface trap states in the devices made from these narrow band gap nanocrystals are mostly unexplored. Herein, we investigate the defects or traps in these nanocrystals-embedded devices, which will be critical for improving their optoelectronic performance. In this article, we fabricate HgTe nanocrystals/TiO2 based photovoltaic devices and used capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) to investigate and obtain quantitative information on deep level trap states. Interestingly, frequency dependent C-V measurements show two peaks in the capacitance at lower frequency (<40 kHz), which is attributed to the presence of trap states. However, at high frequency the presence of a weak hump-like structure almost at the center of above two peaks validate the role of interface traps. DLTS studies show that traps at the interface of HgTe nanocrystals/TiO2 acts as recombination centers having activation energies of 0.27, 0.4 and 0.45 eV with corresponding trap densities of 1.4 [Formula: see text], 1.[Formula: see text] and 1.[Formula: see text] and estimated capture cross-sections of 6.3 [Formula: see text], 7.5 [Formula: see text] and 3.7 [Formula: see text], respectively. In this work, DLTS has revealed the existence of interface trap states and the frequency dependent capacitance measurements corroborate the effect of charge storage on the heterostructures built from these nanocrystals that helps in the development of futuristic devices.
