Optical modulator based on a silicon-ITO grating embedded rib structure with a tunable group delay.

An optical modulator based on an engineered silicon-indium tin oxide (Si-ITO) structure is proposed with a tunable group delay. A large group delay is reported by slowing down the light in a Si-ITO grating embedded rib structure. Optical modulation and a tunable group delay are realized by utilizing the electrically tunable permittivity of ITO in the engineered waveguide. The extinction ratio over 8 dB for a 10 µm long device and the modulation efficiency around 12 V-µm are reported for a wide wavelength from 1530 to 1570 nm. The resulting modulation efficiency and the extinction ratio show a significant improvement as compared to conventional modulators based on rib waveguides. We also report around 82 psec electrical tuning in the group delay for a wide wavelength range. This concept is promising in view of realizing tunable delay lines, along with slow light modulators with a reduced device footprint and low energy dissipation.

Engineered nanophotonic waveguide with ultra-low dispersion.

A silicon-based engineered hybrid plasmonic waveguide with ultra-low dispersion is proposed. The ridge-shaped structure of the nanophotonic waveguide enables nano-scale confinement with electrically tunable characteristics using the plasma dispersion effect in silicon. The waveguide exhibits ultra-low dispersion of $1.28\;{{\rm ps}^2}/{\rm m}$ at telecommunication wavelength (1550 nm) in C band together with dual flatband dispersion over a wavelength range of 370 nm. The hybrid plasmonic mode is made to be confined in 15 nm thick ${{\rm SiO}_2}$ with a propagation loss of 15.3 dB/mm utilizing the engineered ridge structure comprising Si, ${{\rm SiO}_2}$, and gold. In addition, the proposed waveguide shows six zero-dispersion wavelengths. The imaginary and real parts of the effective refractive index of the guided hybrid plasmonic mode are reported to be tunable with the applied voltage. The reported numerical results can pave the way for achieving intensity modulators and other electrically tunable devices at telecommunication wavelengths. The ultra-low dispersion and electrical tuning make this nanophotonic waveguide an absolute contender for applications including efficient nonlinear signal processing such as wide wavelength conversion based on four-wave mixing, supercontinuum generation, and other nanoscale integrated photonic devices.

Optical switch with ultra high extinction ratio using electrically controlled metal diffusion.

An optical switch with ultra high extinction ratio is proposed. Optical switching is realized using the resistive switching effect through the lateral coupling between the input nanophotonic waveguide and output waveguide at a wavelength of 1550 nm. The coupled waveguide system is engineered to increase the number of mode beats in a unit length of the device. An increase in the number of mode beats and controlled diffusion of metal ions through a thin dielectric layer with an applied electric field is responsible for a high optical extinction ratio of 27 dB for a 20 µm long device. Compared to electrical control by plasma dispersion in silicon, the resistive switching effect enables a reduction in the coupling length and an increase in the waveguide absorption, leading to an almost 100 times higher extinction ratio. The proposed compact on-chip silicon-based nanophotonic resistive device is a potential candidate for a large-scale integrated photonic circuit for applications in optical switching, modulation, memory, and computation.