Analysis of Lanthanum Oxide Based Double-Gate SOI MOSFET using Monte-Carlo Process.

INTRODUCTION: This work proposes a Double-Gate (DG) MOSFET with a Single Material made of Silicon On-Insulator (SOI). The Lanthanum Oxide material with a high k-dielectric constant has been used as an interface between two gates and the channel. The Monte Carlo analysis has been used to determine the Conduction Band Energy (Ec) profiles and electron sheet carrier densities (ns) for a Silicon channel thickness (tsi) of 10 nm at 0.5 V gate drain-source voltages. The transverse electric fields are weak at the midchannel of DG SOI MOSFETs, where quantum effects are encountered. The Monte Carlo simulation has been confirmed to be effective for high-energy transport. A particle description reproduces the granularity property of the transport for nanoscale modeling. METHODS: This work utilizes a Monte Carlo (MC) Simulation for the proposed Double Gate Single Material Silicon On Insulator MOSFET with (La2O3=2 nm) as dielectric oxide on upper and lower gate material. The electrical properties of the DG SOI MOSFETs with Lanthanum Oxide were analyzed using Monte Carlo simulation, including the conduction band energy, electric field, potential distribution, particle movement, and average velocity. RESULTS: The peak electric field (E) simulation results and an average drift velocity (υavg) of 6Í105 V/cm and 1.6Í107 cm/s were obtained, respectively. The conduction band energy for the operating region of the source has been observed to be 4 % to the drain side, which obtained a value of -0.04 eV at the terminal end. CONCLUSION: This proposed patent design, such as double-gate SOI-based devices, is the best suggestion for significant scalability challenges. Emerging technologies reach the typical DG SOI MOSFET's threshold performance when their geometrical dimensions are in the nanometer region. This device based on nanomaterial compounds has been more submissive than conventional devices. The nanomaterials usage in the design is more suitable for downscaling and reducing packaging density.

Optimization of Double-Gate Carbon Nanotube FET Characteristics for Short Channel Devices.

INTRODUCTION: Transistors are the fundamental electronic component integrated into electronic devices' chips Carbon Nano Tube (CNT) based field. METHODS: Effect Transistor (FET) is a promising component for next-generation transistor technologies; as it has high carrier mobility, device stability, and mechanical flexibility. Nevertheless, some shortcomings in the CNT FET's design prevent it from providing the best performance while preserving thermal stability. RESULTS: The structure and functionality of transistors with Double-Gate (DG) devices, which use carbon nanotubes as active channel regions, have been examined by the authors of this study. The DG CNT FET has been extensively simulated using an electronic device simulator with various device geometrics, including channel length, oxide thickness for its output, and transfer characteristics. In comparison to reported patents and published works, this demonstrates a significant improvement Conclusion: A new perspective on the DG CNT FET's device performance characteristics is provided by this research work, which can be scaled down to minimum channel length without Short Channel Effects (SCEs).

Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications.

INTRODUCTION: The electrical behavior of a high-performance Indium Gallium Arsenide (In- GaAs) wafer-based n-type Double-Gate (DG) MOSFET with a gate length (LG1= LG2) of 2 nm was analyzed. The relationship of channel length, gate length, top and bottom gate oxide layer thickness, a gate oxide material, and the rectangular wafer with upgraded structural characteristics and the parameters, such as switch current ratio (ION/IOFF) and transconductance (Gm) was analyzed for hybrid RF applications. METHODS: This work was carried out at 300 K utilizing a Non-Equilibrium Green Function (NEGF) mechanism for the proposed DG MOSFET architecture with La2O3 (EOT=1 nm) as gate dielectric oxide and source-drain device length (LSD) of 45 nm. It resulted in a maximum drain current (IDmax) of 4.52 mA, where the drain-source voltage (VDS) varied between 0 V and 0.5 V at the fixed gate to source voltage (VGS) = 0.5 V. The ON current(ION), leakage current (IOFF), and (ION/IOFF) switching current ratios of 1.56 mA, 8.49Í10-6 µA, and 18.3Í107 µA were obtained when the gate to source voltage (VGS) varied between 0 and 0.5 V at fixed drain-source voltage (VDS)=0.5V. RESULTS: The simulated result showed the values of maximum current density (Jmax), one and twodimensional electron density (N1D and N2D), electron mobility (µn), transconductance (Gm), and Subthreshold Slope (SS) are 52.4 µA/m2, 3.6Í107 cm-1, 11.36Í1012 cm-2, 1417 cm2V-1S-1, 3140 µS/µm, and 178 mV/dec, respectively. The Fermi-Dirac statistics were employed to limit the charge distribution of holes and electrons at a semiconductor-insulator interface. The flat-band voltage (VFB) of - 0.45 V for the fixed threshold voltage greatly impacted the breakdown voltage. The results were obtained by applying carriers to the channels with the (001) axis perpendicular to the gate oxide. The sub-band energy profile and electron density were well implemented and derived using the Non-Equilibrium Green's Function (NEGF) formalism. Further, a few advantages of the proposed heterostructure-based DG MOSFET structure over the other structures were observed. CONCLUSION: This proposed patent design, with a reduction in the leakage current characteristics, is mainly suitable for advanced Silicon-based solid-state CMOS devices, Microelectronics, Nanotechnologies, and future-generation device applications.

Modeling, Optimization, and Simulation of Nanomaterials-Based Organic Thin Film Transistor for Future Use in pH Sensing.

INTRODUCTION: Applications of Organic Thin Film Transistor (OTFT) range from flexible screens to disposable sensors, making them a prominent research issue in recent decades. A very accurate and exact pH sensing determination, including biosensors, is essential for these sensors. METHODS: In this present research work, authors have proposed a nanomaterial-based OTFT for future pH monitoring and other biosensing applications. This work presents a numerical model of a pH sensor based on Carbon Nano Tubes (CNTs). Sensing in harsh conditions may be possible with the CNTs due to their strong chemical and thermal resilience. This research work describes the numerical modeling of Bottom-Gate Bottom-Contact (BGBC) OTFTs with a Semiconducting Single-Walled Carbon Nanotube (s-SWCNT) and C60 fullerene blended active layer. RESULT: The design methodology of organic nanomaterial-based OTFTs has been presented with various parameter extraction precisely its electrical characteristics, modeled by adjusting the parameters of the basic semiconductor technology. For an active layer thickness of 200 nm, the drain current of the highest-performing s-SWCNT:C60 -based OTFT structure was around 4.25 A. CONCLUSION: This allows for an accurate representation of the device's electrical characteristics. Using Gold (Ag) Source/Drain (S/D) and back-gate electrodes as the medium for sensing, it has been realized how the thickness of the active layer impacts the performance of an OTFT for pH sensor applications.

Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications.

This research work uses sp3d5s* tight-binding models to design and analyze the structural properties of group IV and III-V oriented, rectangular Silicon (Si) and Gallium Arsenide (GaAs) Nanowires (NWs). The electrical characteristics of the NWs, which are shielded with Lanthanum Oxide (La2O3) material and the orientation with z [001] using the Non-Equilibrium Green Function (NEGF) method, have been analyzed. The electrical characteristics and the parameters for the multi-gate nanowires have been realized. A nanowire comprises a heavily doped n+ donor source and drains doping and n-donor doping at the channel. The specified nanowire has a gate length and channel length of 15 nm each, a source-drain device length LSD = 35 nm, with La2O3 as 1 nm (gate dielectric oxide) each on the top and bottom of the core material (Si/GaAs). The Gate-All-Around (GAA) Si NW is superior with a high (ION/IOFF ratio) of 1.06 × 109, and a low leakage current, or OFF current (IOFF), of 3.84 × 10-14 A. The measured values of the mid-channel conduction band energy (Ec) and charge carrier density (ρ) at VG = VD = 0.5 V are -0.309 eV and 6.24 × 1023 C/cm3, respectively. The nanowires with hydrostatic strain have been determined by electrostatic integrity and increased mobility, making them a leading solution for upcoming technological nodes. The transverse dimensions of the rectangular nanowires with similar energy levels are realized and comparisons between Si and GaAs NWs have been performed.

Design Optimization and Characterization with Fabrication of Nanomaterials-Based Photo Diode Cell for Subretinal Implant Application.

An ultrathin nano photodiode array fabricated in a flexible substrate can be an ideal therapeutic replacement for degenerated photoreceptor cells damaged by Age-related Macula Degeneration (AMD) and Retinitis Pigmentosa (RP), such as retinal infections. Silicon-based photodiode arrays have been attempted as artificial retinas. Considering the difficulties caused by hard silicon subretinal implants, researchers have diverted their attention towards organic photovoltaic cells-based subretinal implants. Indium-Tin Oxide (ITO) has been a favorite choice as an anode electrode. A mix of poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyleste (P3HT: PCBM) has been utilized as an active layer in such nanomaterial-based subretinal implants. Though encouraging results have been obtained during the trial of such retinal implants, the need to replace ITO with a suitable transparent conductive electrode will be a suitable substitute. Further, conjugated polymers have been used as active layers in such photodiodes and have shown delamination in the retinal space over time despite their biocompatibility. This research attempted to fabricate and characterize Bulk Hetero Junction (BHJ) based Nano Photo Diode (NPD) utilizing Graphene-polyethylene terephthalate (G-PET)/semiconducting Single-Wall Carbon Nano Tubes (s-SWCNT): fullerene (C60) blend/aluminium (Al) structure to determine the issues in the development of subretinal prosthesis. An effective design approach adopted in this analysis has resulted in developing an NPD with an Efficiency of 10.1% in a non-ITO-driven NPD structure. Additionally, the results show that the efficiency can be further improved by increasing active layer thickness.

Design and Implementation of Graphene-Based Tunable Microwave Filter for THz Applications.

A reconfigurable Substrate-Integrated Waveguide (SIW) filter operating in the THz region was designed in this work. Two SIW resonators were coupled through a magnetic iris to form a second-order filter with a double-layer substrate. The first substrate was silicon of permittivity 11.9; on top of it, silicon dioxide of permittivity 3.9 was placed. The ground and upper plane were composed of gold plates. Graphene material was then used for the tunability of the filter. A thin graphene sheet was sandwiched between the silicon dioxide substrate and the upper gold plate. An external DC bias voltage was then applied to change the chemical potential of graphene, which, in turn, managed to change the operational center frequency of the filter within the range of 1.289 THz to 1.297 THz, which translated to a bandwidth range of 8 GHz. The second part of this work centered on changing the aspect ratio of the graphene patch to change the center frequency. It was observed that the frequency changed within the range of 1.2908 THz to 1.2929 THz, which gave a bandwidth of 2.1 GHz change.

Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication-A Nanomaterial Approach.

In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device, thereby deriving the drain current equation at the end of the device. The expressions are used for modeling the symmetric doped and undoped channel CSDG MOSFET device. This model uses Pao-Sah's double integral to derive the current equation for the concentric cylindrical structure of the CSDG MOSFET. The three-dimensional surface potential estimation is performed analytically for doped and undoped device parameters. The maximum oxidant concentration of the oxide layer is observed to be 4.37 × 1016 cm-3 of the thickness of 0.82 nm for (100) and 3.90 × 1016 cm-3 of the thickness of 0.96 nm for (111) for dry oxidation, and 2.56 × 1019 cm-3 of thickness 0.33 nm for (100) and 2.11 × 1019 cm-3 of thickness 0.49 nm for (111) for wet oxidation environment conditions. Being an extensive analytical approach, the drain current serves the purpose of electron concentration explicitly inside the concentric cylindrical structures. The behavior of the device is analyzed for various threshold conditions of the gate voltage and other parameters.

G-Optrode Bio-Interfaces for Non-Invasive Optical Cell Stimulation: Design and Evaluation.

Biocompatibility and potential efficacy in biological applications rely on the bio-interactions of graphene nanoparticles with biological tissues. Analyzing and modulating cellular and device-level activity requires non-invasive electrical stimulation of cells. To address these needs, G-optrodes, bio-interfaces based on graphene, have been developed. These devices use light to stimulate cells without modifying their genetic code. Optoelectronic capabilities, in particular the capacity to transform light energy into electrical energy, will be maintained throughout the procedures of neural stimulation. G-optrodes have also been studied as thin films on a range of substrates, and they have been designed to function at a very small scale. This study examines the impact of G-optrode-based substrate designs on the optical stimulation of pheochromocytoma (PC-12). Graphene electrodes, known as G-optrodes, are responsible for converting light into electrical pulses with stimulating effects. G-optrode bio-interfaces provide a stimulus that is independent of wavelength range but is sensitive to changes in illuminance. The authors have performed a comprehensive investigation based on the correct effects of the medication in vitro, employing substrate-based G-optrode biointerfaces. In substrate-based systems, the authors have proven that graphene is biocompatible. PC-12 cells were cultured on graphene for 7 days. Based on the findings, 20-nm and 50-nm thick G-optrodes are being studied for possible use in biological and artificial retinal applications. The findings of this study highlight the significance of biocompatibility in the selection and use of G-optrodes for biomedical purposes.

Testing and Analysis of MOSFET-Based Absorber Integrated Antenna for 5G/WiMAX/WLAN Applications.

A 3D electromagnetic circuit design and analysis of a MOSFET-based absorber active integrated antenna has been performed. It integrates a transmitting dual-band double material substrate (DMS) cylindrical surrounding patch antenna (CSPA) with a MOSFET-based absorber of reflected radio frequency power. It is a solution to the problem of performance degradation in the power amplifier (PA) resulting from antenna and PA impedance mismatch. This fully integrated MOSFET-based absorber antenna can absorb reflected RF power with a diode-based quasi-circulator as part of the integrated design circuitry. The antenna used for the proposed integrated design will operate at frequencies ranging from 2 GHz to 3 GHz and from 4.6 GHz to 6.1 GHz, thus providing a bandwidth of 1 GHz and 1.5 GHz at a resonance frequency of 2.5 GHz and 5.3 GHz, respectively. This makes it suitable for use in lower and upper bands of WLAN/WiMAX medium RF front-end applications. Furthermore, the condition for MOSFET connected to the absorber (IS ≤ ID and VDS = 0) has been satisfied at both instances of resonance. In this proposed design, an antenna radiation efficiency of 84% has been observed.

Device Modelling and Optimization of Nanomaterial-Based Planar Heterojunction Solar Cell (by Varying the Device Dimensions and Material Parameters).

The objective of this work is to model a multi-disciplinary (multi-physics) organic photovoltaic (OPV) using mathematical modeling and analyzing the behavior of a standard planar heterojunction (PHJ) or bi-layer thin-film photovoltaic device, supporting the optimization of an efficient device for future production and assisting in evaluating and choosing the materials required for the efficient device. In order to increase photodiode performance, the device structure and geometrical properties have also been optimized and evaluated. In this work, the effects of varying the device size and transport parameters on the performance parameters of a PHJ OPV structure comprised of Indium Tin Oxide as the anode (ITO), semiconducting single-wall carbon nanotube (s-SWCNT) as the donor, fullerene C70 as the acceptor, and Aluminium (Al) as the cathode have been analyzed. The conclusion suggests that a highly effective ITO/s-SWCNT/C70/Al PHJ solar cell may be fabricated if the suggested device is appropriately built with a thin layer and a high exciton diffusion length, bi-molecular recombination coefficient, and improved mobility charge carriers, in particular hole mobility in the cell's donor layer. In addition, the displayed current-voltage (I-V) characteristics of the proposed PHJ device are clearly indicated, with the ITO/s-SWCNT/C70/Al combination having the greatest short-circuit current density (Jsc) value of 5.61 mA/cm2, open-circuit voltage (Voc) of 0.7 V, fill factor (FF) of 79% and efficiency (ɳ) of 3.1%. Results show that the electrical performance of organic solar cells is sensitive to the thickness of the photoactive substance. These results open the path for developing inexpensive and highly efficient solar cells.

Device Modeling of Organic Photovoltaic Cells with Traditional and Inverted Cells Using s-SWCNT:C60 as Active Layer.

This research work presents a thorough analysis of Traditional Organic Solar Cell (TOSC) and novel designed Inverted OSC (IOSC) using Bulk Hetero-Junction (BHJ) structure. Herein, 2D photovoltaic device models were used to observe the results of the semiconducting Single Wall Carbon Nanotube (s-SWCNT):C60-based organic photovoltaic. This work has improved the BHJ photodiodes by varying the active layer thickness. The analysis has been performed at various active layer thicknesses from 50 to 300 nm using the active material s-SWCNT:C60. An analysis with various parameters to determine the most effective parameters for organic photovoltaic performance has been conducted. As a result, it has been established that IOSC has the maximum efficiency of 10.4%, which is higher than the efficiency of TOSC (9.5%). In addition, the active layer with the highest efficacy has been recorded using this material for both TOSC and IOSC Nano Photodiodes (NPDs). Furthermore, the diode structure and geometrical parameters have been optimized and compared to maximize the performance of photodiodes.

Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel.

In this research work, Amorphous Indium-Gallium-Zinc-Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure. The electrical performance of the novel device structure has been analyzed with its output and transfer characteristics, at different overlap and offset length between gate and Source-Drain (S-D) contacts. The resulted parameters have a better agreement to the device characteristics including high ION/IOFF at offset of the thin-film transistor (TFT) of order 10 11 , high channel mobility is 16.08 cm 2 /V.s in overlap, while it is less than 6 cm 2 /V.s for the offset TFTs. The superior electrical behavior of the novel double-gate TAL TFT have been incorporated. Later on, the device application in a new Active Matrix -Organic Light Emitting Diode (AMOLED) pixel circuit has been proposed.

Signal Processing for Wireless Communication MIMO System with Nano- Scaled CSDG MOSFET based DP4T RF Switch.

In the present technological expansion, the radio frequency integrated circuits in the wireless communication technologies became useful because of the replacement of increasing number of functions, traditional hardware components by modern digital signal processing. The carrier frequencies used for communication systems, now a day, shifted toward the microwave regime. The signal processing for the multiple inputs multiple output wireless communication system using the Metal- Oxide-Semiconductor Field-Effect-Transistor (MOSFET) has been done a lot. In this research the signal processing with help of nano-scaled Cylindrical Surrounding Double Gate (CSDG) MOSFET by means of Double- Pole Four-Throw Radio-Frequency (DP4T RF) switch, in terms of Insertion loss, Isolation, Reverse isolation and Inter modulation have been analyzed. In addition to this a channel model has been presented. Here, we also discussed some patents relevant to the topic.