Polymer-metal coating for high contrast SEM cross sections at the deep nanoscale.

In scanning electron microscopy (SEM), imaging nanoscale features by means of the cross-sectioning method becomes increasingly challenging with shrinking feature sizes. However, obtaining high quality images, at high magnification, is crucial for critical dimension and patterned feature evaluation. Therefore, in this work, we present a new sample preparation method for high performance cross-sectional secondary electron (SE) imaging, targeting features at the deep nanoscale and into the sub-10 nm regime. Different coating architectures including conductive and non-conductive polymer, carbon and metal are compared on their ability to discern etching feature profiles and materials interfaces of densely packed nano-patterned features. A stacked coating of polymer and metal produced better visibility mainly due to enhancement of contrast between feature and background. Contrast was evaluated by using histograms of intensity of gray levels directly derived from SE images, obtained by the SE in-lens detector. In polymer-metal coatings (PMC), optimization of contrast is explored by varying the thickness of the metal layer and results are discussed in terms of the effectiveness of the metal layer in reducing the escape of secondary electrons (SE) generated in the polymer layer and feature. Other advantages of PMCs are their cleanroom compatibility and ease of coating removal.

Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features.

The next generation of hard disk drive technology for data storage densities beyond 5 Tb/in2 will require single-bit patterning of features with sub-10 nm dimensions by nanoimprint lithography. To address this challenge master templates are fabricated using pattern multiplication with atomic layer deposition (ALD). Sub-10 nm lithography requires a solid understanding of materials and their interactions. In this work we study two important oxide materials, silicon dioxide and titanium dioxide, as the pattern spacer and look at their interactions with carbon, chromium and silicon dioxide. We found that thermal titanium dioxide ALD allows for the conformal deposition of a spacer layer without damaging the carbon mandrel and eliminates the surface modification due to the reactivity of the metal-organic precursor. Finally, using self-assembled block copolymer lithography and thermal titanium dioxide spacer fabrication, we demonstrate pattern doubling with 7.5 nm half-pitch spacer features.

Low temperature dry etching of chromium towards control at sub-5 nm dimensions.

Patterned chromium and its compounds are crucial materials for nanoscale patterning and chromium based devices. Here we investigate how temperature can be used to control chromium etching using chlorine/oxygen gas mixtures. Oxygen/chlorine ratios between 0% and 100% and temperatures between -100 °C and +40 °C are studied. Spectroscopic ellipsometry is used to precisely measure rates, chlorination, and the thickness dependence of n and k. Working in the extremes of oxygen content (very high or very low) and lower temperatures, we find rates can be controlled to nanometers per minute. Activation energies are measured and show that etch mechanisms are both temperature and oxygen level dependent. Furthermore, we find that etching temperature can manipulate the surface chemistry. One surprising consequence is that at low oxygen levels, Etching rates increase with decreasing temperature. Preliminary feature-profile studies show the extremes of temperature and oxygen provide advantages over commonly used room temperature processing conditions. One example is with higher ion energies at -100 °C, where etching products deposit.