Low-rank human-like agents are trusted more and blamed less in human-autonomy teaming.

If humans are to team with artificial teammates, factors that influence trust and shared accountability must be considered when designing agents. This study investigates the influence of anthropomorphism, rank, decision cost, and task difficulty on trust in human-autonomous teams (HAT) and how blame is apportioned if shared tasks fail. Participants (N = 31) completed repeated trials with an artificial teammate using a low-fidelity variation of an air-traffic control game. We manipulated anthropomorphism (human-like or machine-like), military rank of artificial teammates using three-star (superiors), two-star (peers), or one-star (subordinate) agents, the perceived payload of vehicles with people or supplies onboard, and task difficulty with easy or hard missions using a within-subject design. A behavioural measure of trust was inferred when participants accepted agent recommendations, and a measure of no trust when recommendations were rejected or ignored. We analysed the data for trust using binomial logistic regression. After each trial, blame was apportioned using a 2-item scale and analysed using a one-way repeated measures ANOVA. A post-experiment questionnaire obtained participants' power distance orientation using a seven-item scale. Possible power-related effects on trust and blame apportioning are discussed. Our findings suggest that artificial agents with higher levels of anthropomorphism and lower levels of rank increased trust and shared accountability, with human team members accepting more blame for team failures.

Terahertz radiation from propagating acoustic phonons based on deformation potential coupling.

We report on new THz electromagnetic emission mechanism from deformational coupling of acoustic (AC) phonons with electrons in the propagation medium of non-polar Si. The epicenters of the AC phonon pulses are the surface and interface of a GaP transducer layer whose thickness (d) is varied in nanoscale from 16 to 45 nm. The propagating AC pulses locally modulate the bandgap, which in turn generates a train of electric field pulses, inducing an abrupt drift motion at the depletion edge of Si. The fairly time-delayed THz bursts, centered at different times (t1T H z, t2T H z, and t3T H z), are concurrently emitted only when a series of AC pulses reach the point of the depletion edge of Si, even without any piezoelectricity. The analysis on the observed peak emission amplitudes is consistent with calculations based on the combined effects of mobile charge carrier density and AC-phonon-induced local deformation, which recapitulates the role of deformational potential coupling in THz wave emission in a formulatively distinct manner from piezoelectric counterpart.

Valley and Zeeman Splittings in Multilayer Epitaxial Graphene Revealed by Circular Polarization Resolved Magneto-infrared Spectroscopy.

Circular-polarization-resolved magneto-infrared studies of multilayer epitaxial graphene (MEG) are performed using tunable quantum cascade lasers in high magnetic fields up to 17.5 T. Landau level (LL) transitions in the monolayer and bilayer graphene inclusions of MEG are resolved, and considerable electron-hole asymmetry is observed in the extracted electronic band structure. For monolayer graphene, a four-fold splitting of the n = 0 to n = 1 LL transition is evidenced and attributed to the lifting of the valley and spin degeneracy of the zeroth LL and the broken electron-hole symmetry. The magnetic field dependence of the splitting further reveals its possible mechanisms. The best fit to experimental data yields effective g-factors, gVS* = 6.7 and gZS* = 4.8, for the valley and Zeeman splittings, respectively.

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces.

Thin GaP films can be grown on an exact Si(0 0 1) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP overlayer and in the Si substrate. The coupling of the GaP LO phonons with photoexcited plasma is reduced significantly with decreasing GaP layer thickness from 56 to 16 nm due to the quasi-two-dimensional confinement of the plasma. The same laser pulse can also generate coherent longitudinal acoustic phonons in the form of a strain pulse. The strain pulse induces not only a periodic modulation in the optical reflectivity as it propagates in the semiconductor, but also a sharp spike when it arrives at the GaP layer boundary. The acoustic pulse induced at the GaP/Si interface is remarkably stronger than that at the Si surface, suggesting a possible application of the GaP/Si heterostructure as an opto-acoustic transducer. The amplitude and the phase of the reflectivity modulation varies with the GaP layer thickness, which can be understood in terms of the interference caused by the multiple acoustic pulses generated at the top surface and at the buried interface.

Detecting the Photoexcited Carrier Distribution Across GaAs/Transition Metal Oxide Interfaces by Coherent Longitudinal Acoustic Phonons.

A prominent architecture for solar energy conversion layers diverse materials, such as traditional semiconductors (Si, III-V) and transition metal oxides (TMOs), into a monolithic device. The efficiency with which photoexcited carriers cross each layer is critical to device performance and dependent on the electronic properties of a heterojunction. Here, by time-resolved changes in the reflectivity after excitation of an n-GaAs/p-GaAs/TMO (Co3O4, IrO2) device, we detect a photoexcited carrier distribution specific to the p-GaAs/TMO interface through its coupling to phonons in both materials. The photoexcited carriers generate two coherent longitudinal acoustic phonons (CLAPs) traveling in opposite directions, one into the TMO and the other into the p-GaAs. This is the first time a CLAP is reported to originate at a semiconductor/TMO heterojunction. Therefore, these experiments seed future modeling of the built-in electric fields, the internal Fermi level, and the photoexcited carrier density of semiconductor/TMO interfaces within multilayered heterostructures.

Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP.

We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈Sz〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, Eg. Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k=0 bandedge, we define a new parameter, Sopt(Eph). Incorporating this revised element into the expression for 〈Sz〉, we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects.

Electron and phonon coupling dynamics in low-gap semiconductor: quantum versus classical scale.

We have studied the characteristics of longitudinal-optical-phonon-plasmon coupled (LOPC) mode by using the ultrashort pulsed laser with 45 THz bandwidth as a function of thickness in InAs epilayers, ranging from 10 to 900 nm. We have observed the LOPC modes split into the upper (L(+) mode) and the lower (L(-) mode) branches only in the classical scale, but the longitudinal-optical (LO) phonon peak was persistently observed. The shorter decay time of the plasmon-like L(+) modes rather than the phonon-like L(-) modes should be associated with carrier-carrier scattering which is further considered with diffusion properties in the low-gap semiconductors. This result leads to that the absence of the LOPC modes in a scale less than exciton Bohr radius manifests the role of electron diffusion rather than the carrier screening via drift motion in surface depletion region.

Ultrafast generation of fundamental and multiple-order phonon excitations in highly enriched (6,5) single-wall carbon nanotubes.

Using a macroscopic ensemble of highly enriched (6,5) single-wall carbon nanotubes, combined with high signal-to-noise ratio and time-dependent differential transmission spectroscopy, we have generated vibrational modes in an ultrawide spectral range (10-3000 cm(-1)). A total of 14 modes were clearly resolved and identified, including fundamental modes of A, E1, and E2 symmetries and their combinational modes involving two and three phonons. Through comparison with continuous wave Raman spectra as well as calculations based on an extended tight-binding model, we were able to identify all the observed peaks and determine the frequencies of the individual and combined modes. We provide a full summary of phonon frequencies for (6,5) nanotubes that can serve as a basic reference with which to refine our understanding of nanotube phonon spectra as well as a testbed for new theoretical models.

Manifestation of Landau level effects in optically-pumped NMR of semi-insulating GaAs.

Oscillations in the magnitude of optically generated nuclear spin polarization as a function of photon energy have been observed in bulk semiconductors using optically-pumped NMR (OPNMR). We compare experimental measurements of (69)Ga OPNMR with experimental measurements of magneto-absorption in bulk GaAs at low temperatures (6 K) and multiple magnetic fields. These data show that the photon energy dependence of both the OPNMR signal intensities and the magneto-absorption coefficients are well correlated over the studied energy regime approximately 1.515-1.568 eV, i.e., at and above the bandgap energy. Using the magneto-absorption coefficients as an input to a previously reported model of OPNMR, we are able to capture many of the oscillatory features in the (69)Ga signal, demonstrating that the origin of these oscillations are magnetic in nature, namely the formation of Landau levels. The nuclear spins as probed by OPNMR provide a measure of the circularly-polarized optical interband transitions between Landau levels. This correlation shows the importance of magneto-absorption measurements for understanding the complex photon energy dependence profile of OPNMR.