Gate-Tunable Band Structure of the LaAlO_{3}-SrTiO_{3} Interface.

The two-dimensional electron system at the interface between LaAlO_{3} and SrTiO_{3} has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observe a Lifshitz transition at a density of 2.9×10^{13}cm^{-2}. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex-oxide interfaces.

Andreev Reflection in an s-Type Superconductor Proximized 3D Topological Insulator.

We investigate transport and shot noise in lateral normal-metal-3D topological-insulator-superconductor contacts, where the 3D topological insulator (TI) is based on Bi. In the normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor F_{N}≈1/3 in magnetic field and in a reference normal-metal contact. In the absence of magnetic field, we identify the Andreev reflection (AR) regime, which gives rise to the effective charge doubling in shot noise measurements. Surprisingly, the Fano factor F_{AR}≈0.22±0.02 is considerably reduced in the AR regime compared to F_{N}, in contrast to previous AR experiments in normal metals and semiconductors. We suggest that this effect is related to a finite thermal conduction of the proximized, superconducting TI owing to a residual density of states at low energies.