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1.
Nano Lett ; 12(3): 1115-20, 2012 Mar 14.
Article in English | MEDLINE | ID: mdl-21517124

ABSTRACT

"Quantum posts" are roughly cylindrical semiconductor nanostructures that are embedded in an energetically shallower "matrix" quantum well of comparable thickness. We report measurements of voltage-controlled charging and terahertz absorption of 30 nm thick InGaAs quantum wells and posts. Under flat-band (zero-electric field) conditions, the quantum posts each contain approximately six electrons, and an additional ~2.4 × 10(11) cm(-2) electrons populate the quantum well matrix. In this regime, absorption spectra show peaks at 3.5 and 4.8 THz (14 and 19 meV) whose relative amplitude depends strongly on temperature. These peaks are assigned to intersubband transitions of electrons in the quantum well matrix. A third, broader feature has a temperature-independent amplitude and is assigned to an absorption involving quantum posts. Eight-band k·p calculations incorporating the effects of strain and Coulomb repulsion predict that the electrons in the posts strongly repel the electrons in the quantum well matrix, "perforating" the electron gas. The strongest calculated transition, which has a frequency close to the center of the quantum post related absorption at 5 THz (20 meV), is an ionizing transition from a filled state to a quasi-bound state that can easily scatter to empty states in the quantum well matrix.


Subject(s)
Arsenicals/chemistry , Gases/chemistry , Indium/chemistry , Models, Chemical , Quantum Dots , Semiconductors , Terahertz Radiation , Absorption , Computer Simulation , Electrons , Static Electricity
2.
Opt Express ; 19(20): 19114-21, 2011 Sep 26.
Article in English | MEDLINE | ID: mdl-21996852

ABSTRACT

The generation and characterization of narrowband THz pulses by means of chirped pulse difference frequency generation in Auston-switch type photoconductive antennas is reported. Using optical pulses with energies in the range from 1 nJ to 1 µJ, we generate THz pulses with up to 50 pJ in energy and electric field strengths on the order of 1 kV/cm. Two emitter concepts are investigated and circumvention of the fast saturation for small area excitation by scaling of the THz emitter is demonstrated.


Subject(s)
Lasers , Models, Theoretical , Optics and Photonics , Terahertz Radiation , Computer Simulation , Equipment Design
3.
Opt Lett ; 35(22): 3799-801, 2010 Nov 15.
Article in English | MEDLINE | ID: mdl-21082001

ABSTRACT

We have developed a rapid scanning terahertz (THz) spectrometer based on a synchronized two-fiber-laser system. When the system is set to the asynchronous optical sampling mode, THz spectra extending to 3 THz can be acquired within 1 µs at a signal-to-noise ratio of the electric field of better than 20. Signal averaging results in a dynamic range of more than 60 dB, and frequency components of more than 4 THz can be detected. When the lasers are set to the same repetition rate, electronically controlled optical sampling at a rate of 2.5 kHz is demonstrated, making the system versatile for different spectroscopic applications. Finally, we compare the THz emission spectra of a photoconductive switch that is pumped at 780 nm and a nonlinear DAST crystal excited at 1550 nm. We find that the spectral range of the spectrometer is significantly enhanced at higher frequencies, while the dynamic range remains constant.

4.
Phys Rev Lett ; 105(16): 167401, 2010 Oct 15.
Article in English | MEDLINE | ID: mdl-21231010

ABSTRACT

The near-infrared transmission of a semiconductor multiple quantum well is probed under intense terahertz illumination. We observe clear evidence of the intraexcitonic Autler-Townes effect when the terahertz beam is tuned near the 1s-2p transition of the heavy-hole exciton. The strongly coupled effective two-level system has been driven with terahertz field strengths of up to 10 kV/cm resulting in a Rabi energy of ≈0.6 times the transition energy. The induced near-infrared spectral changes at low intensities are qualitatively explained using a basic two-level model.

5.
Phys Rev Lett ; 95(25): 257401, 2005 Dec 16.
Article in English | MEDLINE | ID: mdl-16384504

ABSTRACT

It is shown that the confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. Intersubband absorption experiments, which can be nearly perfectly reproduced by the theory, corroborate this interpretation, which also requires reinterpretation of previous data.

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