1.
Opt Lett
; 40(19): 4400-3, 2015 Oct 01.
Article
in English
| MEDLINE
| ID: mdl-26421541
ABSTRACT
Two different speed optimized avalanche photodiodes (APDs) fabricated in a 0.35 µm standard high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) process with a high unamplified responsivity (avalanche gain M=1) of 0.41 A/W at 670 nm are presented. These APDs differ regarding the effective doping of the deep p well (90% and 75%), using lateral well modulation doping. Compared to the -3 dB bandwidth of the unmodulated APD with 100% doping (850 MHz), this optimization leads to an improved bandwidth of 1.02 and 1.25 GHz for the 75% APD and 90% APD, respectively, both at a gain of M=50.
2.
Cesk Epidemiol Mikrobiol Imunol
; 28(2): 65-73, 1979 Mar.
Article
in Czech
| MEDLINE
| ID: mdl-156080