Strong Electron-Phonon Interaction in 2D Vertical Homovalent III-V Singularities.

Highly polar materials are usually preferred over weakly polar ones to study strong electron-phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carriers and phonons at the vicinity of a 2D vertical homovalent singularity (antiphase boundary, APB) in an (In,Ga)P/SiGe/Si sample. The impact of the electron-phonon interaction on the photoluminescence processes is then clarified by combining transmission electron microscopy, X-ray diffraction, ab initio calculations, Raman spectroscopy, and photoluminescence experiments. 2D localization and layer group symmetry properties of homovalent electronic states and phonons are studied by first-principles methods, leading to the prediction of a type-II band alignment between the APB and the surrounding semiconductor matrix. A Huang-Rhys factor of 8 is finally experimentally determined for the APB emission line, underlining that a large and unusually strong electron-phonon coupling can be achieved by 2D vertical quantum confinement in an undoped III-V semiconductor. This work extends the concept of an electron-phonon interaction to 2D vertically buried III-V homovalent nano-objects and therefore provides different approaches for material designs, vertical carrier transport, heterostructure design on silicon, and device applications with weakly polar semiconductors.

Cathodoluminescence hyperspectral analysis of whispering gallery modes in active semiconductor wedge resonators.

Whispering gallery mode resonators are key devices for integrated photonics. Despite their generalization in fundamental and applied science, information on spatial confinement of light in these structures is mostly retrieved from purely spectral analysis. In this work, we present a detailed spectral and spatial characterization of whispering gallery modes in active semiconductor microdisk resonators by use of hyperspectral cathodoluminescence. By comparing our experimental findings to finite element simulations, we demonstrate that the combination of spectral and spatial measurements enables unique identification of the modes and even reveals specific features of the microresonator geometry, such as a wedge profile.

Heating-Enhanced Dielectrophoresis for Aligned Single-Walled Carbon Nanotube Film of Ultrahigh Density.

In this paper, we demonstrate that the alignment density of individualized single-walled carbon nanotubes (SWCNTs) can be greatly improved by heating-enhanced dielectrophoresis (HE-DEP) process. The observations by scanning electron microscope (SEM) suggest ultrahigh alignment density and good alignment quality of SWCNTs. The intuitive alignment density of individualized SWCNTs is much higher than the currently reported best results. The reason of this HE-DEP process is explained by simulation work and ascribed to the heating-enhanced convection process, and the "convection force" induced by the heating effect is assessed in a novel way.