Band alignment at interfaces of two-dimensional materials: internal photoemission analysis.

The article overviews experimental results obtained by applying internal photoemission (IPE) spectroscopy methods to characterize electron states in single- or few-monolayer thick two-dimensional materials and at their interfaces. Several conducting (graphene) and semiconducting (transitional metal dichalcogenides MoS2, WS2, MoSe2, and WSe2) films on top of thermal SiO2 have been analyzed by IPE, which reveals significant sensitivity of interface band offsets and barriers to the details of the material and interface fabrication, indicating violation of the Schottky-Mott rule. This variability is associated with charges and dipoles formed at the interfaces with van der Waals bonding as opposed to the chemically bonded interfaces of three-dimensional semiconductors and metals. Chemical modification of the underlying SiO2 surface is shown to be a significant factor, affecting interface barriers due to violation of the interface electroneutrality.

Aryl-viologen pentapeptide self-assembled conductive nanofibers.

A pentapeptide sequence was functionalized with an asymmetric arylated methyl-viologen (AVI3D2) and through controllable ß-sheet self-assembly, conductive nanofibers were formed. Using a combination of spectroscopic techniques and conductive atomic force microscopy, we investigated the molecular conformation of the resultant AVI3D2 fibers and how their conductivity is affected by ß-sheet self-assembly. These conductive nanofibers have potential for future exploration as molecular wires in optoelectronic applications.

Structural Properties of Al-O Monolayers in SiO2 on Silicon and the Maximization of Their Negative Fixed Charge Density.

Al2O3 on Si is known to form an ultrathin interfacial SiO2 during deposition and subsequent annealing, which creates a negative fixed charge ( Qfix) that enables field-effect passivation and low surface recombination velocities in Si solar cells. Various concepts were suggested to explain the origin of this negative Qfix. In this study, we investigate Al-O monolayers (MLs) from atomic layer deposition (ALD) sandwiched between deliberately grown/deposited SiO2 films. We show that the Al atoms have an ultralow diffusion coefficient (∼4 × 10-18 cm2/s at 1000 °C), are deposited at a constant rate of ∼5 × 1014 Al atoms/(cm2 cycle) from the first ALD cycle, and are tetrahedral O-coordinated because the adjacent SiO2 imprints its tetrahedral near-order and bond length into the Al-O MLs. By variation in the tunnel-SiO2 thickness and the number of Al-O MLs, we demonstrate that the tetrahedral coordination alone is not sufficient for the formation of Qfix but that a SiO2/Al2O3 interface within a tunneling distance from the substrate must be present. The Al-induced acceptor states at these interfaces have energy levels slightly below the Si valence band edge and require charging by electrons from either the Si substrate or from Si/SiO2 dangling bonds to create a negative Qfix. Hence, tunneling imposes limitations for the SiO2 and Al2O3 layer thicknesses. In addition, Coulomb repulsion between the charged acceptor states results in an optimum number of Al-O MLs, i.e., separation of both interfaces. We achieve maximum negative Qfix of ∼5 × 1012 cm-2 (comparable to thick ALD-Al2O3 on Si) with ∼1.7 nm tunnel-SiO2 and just seven ALD-Al2O3 cycles (∼8 Å) after optimized annealing at 850 °C for 30 s. The findings are discussed in the context of a passivating, hole-selective tunnel contact for high-efficiency Si solar cells.

Electrical Characterization of Ultrathin RF-Sputtered LiPON Layers for Nanoscale Batteries.

Ultrathin lithium phosphorus oxynitride glass (LiPON) films with thicknesses down to 15 nm, deposited by reactive sputtering in nitrogen plasma, were found to be electronically insulating. Such ultrathin electrolyte layers could lead to high power outputs and increased battery energy densities. The effects of stoichiometry, film thickness, and substrate material on the ionic conductivity were investigated. As the amount of nitrogen in the layers increased, the activation energy of the ionic conductivity decreased from 0.63 to 0.53 eV, leading to a maximum conductivity of 1 × 10(-6) S/cm. No dependence of the ionic conductivity on the film thickness or substrate material could be established. A detailed analysis of the equivalent circuit model used to fit the impedance data is provided. Polarization measurements were performed to determine the electronic leakage in these ultrathin films. A 15-nm LiPON layer on a TiN substrate showed electronically insulating properties with electronic resistivity values around 10(15) Ω·cm. To our knowledge, this is the thinnest RF-sputtered LiPON layer shown to be electronically insulating while retaining good ionic conductivity.

High Cycling Stability and Extreme Rate Performance in Nanoscaled LiMn2O4 Thin Films.

Ultrathin LiMn2O4 electrode layers with average crystal size of ∼15 nm were fabricated by means of radio frequency sputtering. Cycling behavior and rate performance was evaluated by galvanostatic charge and discharge measurements. The thinnest films show the highest volumetric capacity and best cycling stability, retaining the initial capacity over 70 (dis)charging cycles when manganese dissolution is prevented. The increased stability for film thicknesses below 50 nm allows cycling in both the 4 and 3 V potential regions, resulting in a high volumetric capacity of 1.2 Ah/cm3. It is shown that the thinnest films can be charged to 75% of their full capacity within 18 s (200 C), the best rate performance reported for LiMn2O4. This is explained by the short diffusion lengths inherent to thin films and the absence of phase transformation.

Characterization of thin films of the solid electrolyte Li(x)Mg(1-2x)Al(2+x)O4 (x = 0, 0.05, 0.15, 0.25).

RF-sputtered thin films of spinel Li(x)Mg(1-2x)Al(2+x)O4 were investigated for use as solid electrolyte. The usage of this material can enable the fabrication of a lattice matched battery stack, which is predicted to lead to superior battery performance. Spinel Li(x)Mg(1-2x)Al(2+x)O4 thin films, with stoichiometry (x) ranging between 0 and 0.25, were formed after a crystallization anneal as shown by X-ray diffraction and transmission electron microscopy. The stoichiometry of the films was evaluated by elastic recoil detection and Rutherford backscattering and found to be slightly aluminum rich. The excellent electronic insulation properties were confirmed by both current-voltage measurements as well as by copper plating tests. The electrochemical stability window of the material was probed using cyclic voltammetry. Lithium plating and stripping was observed together with the formation of a Li-Pt alloy, indicating that Li-ions passed through the film. This observation contradicted with impedance measurements at open circuit potential, which showed no apparent Li-ion conductivity of the film. Impedance spectroscopy as a function of potential showed the occurrence of Li-ion intercalation into the Li(x)Mg(1-2x)Al(2+x)O4 layers. When incorporating Li-ions in the material the ionic conductivity can be increased by 3 orders of magnitude. Therefore it is anticipated that the response of Li(x)Mg(1-2x)Al(2+x)O4 is more adequate for a buffer layer than as the solid electrolyte.

First-principles material modeling of solid-state electrolytes with the spinel structure.

Ionic diffusion through the novel (AlxMg1-2xLix)Al2O4 spinel electrolyte is investigated using first-principles calculations, combined with the Kinetic Monte Carlo algorithm. We observe that the ionic diffusion increases with the lithium content x. Furthermore, the structural parameters, formation enthalpies and electronic structures of (AlxMg1-2xLix)Al2O4 are calculated for various stoichiometries. The overall results indicate the (AlxMg1-2xLix)Al2O4 stoichiometries x = 0.2…0.3 as most promising. The (AlxMg1-2xLix)Al2O4 electrolyte is a potential candidate for the all-spinel solid-state battery stack, with the material epitaxially grown between well-known spinel electrodes, such as LiyMn2O4 and Li4+3yTi5O12 (y = 0…1). Due to their identical crystal structure, a good electrolyte-electrode interface is expected.

Microcrystalline organic thin-film solar cells.

Microcrystalline organic films with tunable thickness are produced directly on an indium-tin-oxide substrate, by crystallizing a thin amorphous rubrene film followed by its use as a template for subsequent homoepitaxial growth. These films, with exciton diffusion lengths exceeding 200 nm, produce solar cells with increasing photocurrents at thicknesses up to 400 nm with a fill factor >65%, demonstrating significant potential for microcrystalline organic electronic devices.

Toward tunable doping in graphene FETs by molecular self-assembled monolayers.

In this paper, we report the formation of self-assembled monolayers (SAMs) of oleylamine (OA) on highly oriented pyrolytic graphite (HOPG) and graphene surfaces and demonstrate the potential of using such organic SAMs to tailor the electronic properties of graphene. Molecular resolution Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) images reveal the detailed molecular ordering. The electrical measurements show that OA strongly interacts with graphene leading to n-doping effects in graphene devices. The doping levels are tunable by varying the OA deposition conditions. Importantly, neither hole nor electron mobilities are decreased by the OA modification. As a benefit from this noncovalent modification strategy, the pristine characteristics of the device are recoverable upon OA removal. From this study, one can envision the possibility to correlate the graphene-based device performance with the molecular structure and supramolecular ordering of the organic dopant.

Spin dynamics and relaxation in graphene nanoribbons: electron spin resonance probing.

Here we report the results of a multifrequency (~9, 20, 34, 239.2, and 336 GHz) variable-temperature continuous wave (cw) and X-band (~9 GHz) pulse electron spin resonance (ESR) measurement performed at cryogenic temperatures on potassium split graphene nanoribbons (GNRs). Important experimental findings include the following: (a) The multifrequency cw ESR data infer the presence of only carbon-related paramagnetic nonbonding states, at any measured temperature, with the g value independent of microwave frequency and temperature. (b) A linear broadening of the ESR signal as a function of microwave frequency is noticed. The observed linear frequency dependence of ESR signal width points to a distribution of g factors causing the non-Lorentzian line shape, and the g broadening contribution is found to be very small. (c) The ESR process is found to be characterized by slow and fast components, whose temperature dependences could be well described by a tunneling level state model. This work not only could help in advancing the present fundamental understanding on the edge spin (or magnetic)-based properties of GNRs but also pave the way to GNR-based spin devices.

Experiment and theoretical modeling of the luminescence of silver nanoclusters dispersed in oxyfluoride glass.

Density functional theory (DFT) and complete active space perturbation theory (CASPT2) have been applied for modeling the configuration, charge, energy states, and spin of luminescent Ag nanoclusters dispersed within the bulk of oxyfluoride glass host. The excitation spectra of luminescence of the Ag nanoclusters have been measured and simulated by means of the DFT and CASPT2. Electron spin resonance spectra have been recorded and suggest diamagnetic state of Ag nanoclusters. The silver nanoclusters have been argued to consist mostly of pairs of Ag(2) (+) dimers, or Ag(4) (2+) tetramers, with different extent of distortion along the tetramer diagonal. The sites for the Ag nanoclusters have been suggested where the pairs of Ag ions substitute onto metal and hole cation sites and are surrounded by fluorine ions within a fluorite-type lattice.

Some properties of Ti-related paramagnetic centres relevant for electron spin resonance dating of single sedimentary quartz grains.

We performed Q-band ESR spectroscopy on several single quartz grains from different geological deposits. Various properties of Ti-related impurity centres in quartz relevant for ESR dating were studied. It will be shown that some properties, such as sensitivity change and response to artificial gamma-irradiation, may vary from grain to grain. It is concluded that single grain ESR dating is feasible at a pure experimental level.