Correlative infrared-electron nanoscopy reveals the local structure-conductivity relationship in zinc oxide nanowires.

High-resolution characterization methods play a key role in the development, analysis and optimization of nanoscale materials and devices. Because of the various material properties, only a combination of different characterization techniques provides a comprehensive understanding of complex functional materials. Here we introduce correlative infrared-electron nanoscopy, a novel method yielding transmission electron microscope and infrared near-field images of one and the same nanostructure. While transmission electron microscopy provides structural information up to the atomic level, infrared near-field imaging yields nanoscale maps of chemical composition and conductivity. We demonstrate the method's potential by studying the relation between conductivity and crystal structure in ZnO nanowire cross-sections. The combination of infrared conductivity maps and the local crystal structure reveals a radial free-carrier gradient, which inversely correlates to the density of extended crystalline defects. Our method opens new avenues for studying the local interplay between structure, conductivity and chemical composition in widely different material systems.

Nanoscale free-carrier profiling of individual semiconductor nanowires by infrared near-field nanoscopy.

We report quantitative, noninvasive and nanoscale-resolved mapping of the free-carrier distribution in InP nanowires with doping modulation along the axial and radial directions, by employing infrared near-field nanoscopy. Owing to the technique's capability of subsurface probing, we provide direct experimental evidence that dopants in interior nanowire shells effectively contribute to the local free-carrier concentration. The high sensitivity of s-SNOM also allows us to directly visualize nanoscale variations in the free-carrier concentration of wires as thin as 20 nm, which we attribute to local growth defects. Our results open interesting avenues for studying local conductivity in complex nanowire heterostructures, which could be further enhanced by near-field infrared nanotomography.

Location and type of mutation in the LIS1 gene do not predict phenotypic severity.

BACKGROUND: Lissencephaly is a neuronal migration disorder leading to absent or reduced gyration and a broadened but poorly organized cortex. The most common form of lissencephaly is isolated, referred as classic or type 1 lissencephaly. Type 1 lissencephaly is mostly associated with a heterozygous deletion of the entire LIS1 gene, whereas intragenic heterozygous LIS1 mutations or hemizygous DCX mutations in males are less common. METHODS: Eighteen unrelated patients with type 1 lissencephaly were clinically and genetically assessed. In addition, patients with subcortical band heterotopia (n = 1) or lissencephaly with cerebellar hypoplasia (n = 2) were included. RESULTS: Fourteen new and seven previously described LIS1 mutations were identified. We observed nine truncating mutations (nonsense, n = 2; frameshift, n = 7), six splice site mutations, five missense mutations, and one in-frame deletion. Somatic mosaicism was assumed in three patients with partial subcortical band heterotopia in the occipital-parietal lobes or mild pachygyria. We report three mutations in exon 11, including a frameshift which extends the LIS1 protein, leading to type 1 lissencephaly and illustrating the functional importance of the WD domains at the C terminus. Furthermore, we present two patients with novel LIS1 mutations in exon 10 associated with lissencephaly with cerebellar hypoplasia type a. CONCLUSION: In contrast to previous reports, our data suggest that neither type nor position of intragenic mutations in the LIS1 gene allows an unambiguous prediction of the phenotypic severity. Furthermore, patients presenting with mild cerebral malformations such as subcortical band heterotopia or cerebellar hypoplasia should be considered for genetic analysis of the LIS1 gene.

Ductile ordered intermetallic alloys.

Many ordered intermetallic alloys have attractive high-temperature properties; however, low ductility and brittle fracture limit their use for structural applications. The embrittlement in these alloys is mainly caused by an insufficient number of slip systems (bulk brittleness) and poor grain-boundary cohesion. Recent studies have shown that the ductility and fabricability of ordered intermetallics can be substantially improved by alloying processes and control of microstructural features through rapid solidification and thermomechanical treatments. These results demonstrate that the brittleness problem associated with ordered intermetallics can be overcome by using physical metallurgical principles. Application of these principles will be illustrated by results on Ni(3)Al and Ni(3)V-Co(3)V-Fe(3)V. The potential for developing these alloys as a new class of high-temperature structural materials is discussed.