ABSTRACT
Traditionally, alkaline water electrolysis (AWE) uses diaphragms to separate anode and cathode and is operated with 5-7 M KOH feed solutions. The ban of asbestos diaphragms led to the development of polymeric diaphragms, which are now the state of the art material. A promising alternative is the ion solvating membrane. Recent developments show that high conductivities can also be obtained in 1 M KOH. A third technology is based on anion exchange membranes (AEM); because these systems use 0-1 M KOH feed solutions to balance the trade-off between conductivity and the AEM's lifetime in alkaline environment, it makes sense to treat them separately as AEM WE. However, the lifetime of AEM increased strongly over the last 10 years, and some electrode-related issues like oxidation of the ionomer binder at the anode can be mitigated by using KOH feed solutions. Therefore, AWE and AEM WE may get more similar in the future, and this review focuses on the developments in polymeric diaphragms, ion solvating membranes, and AEM.
ABSTRACT
A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intended to be with respect to the screening length, which is a function of the volumetric charge density. In amorphous materials the transition potential at which the semiconducting to insulating behaviour is observed is dependent on the frequency. An approximated analytical solution for the capacitance of the junction is calculated. The model for finite thickness semiconductors is successfully applied to the study of anodic Nb(2)O(5), formed in phosphate buffer 0.5 M aqueous solution up to different formation potentials (namely 5, 10 and 20 V vs. Ag/AgCl). The finite thickness semiconductor model permits extrapolation to a general behaviour of the oxide in a wide range of frequencies, potentials and thicknesses, and identification of the electron transfer between adsorbed surface species and the conduction band of Nb(2)O(5) at potentials near to the flat band value.
