Xenon-filled diode performance under influence of low doses of gamma radiation.

This paper presents a detailed statistical analysis of experimental results of dynamic breakdown voltage and electrical breakdown time delay for xenon-filled diode. These quantities have a stochastic nature and they were measured in the cases when the xenon-filled diode was and was not exposed to a gamma radiation source, with exposure dose rate 7.7⋅10-12 C/(kg⋅s). The static breakdown voltage was estimated based on dynamic breakdown voltage as a function of voltage increase rate. The applicability of certain distributions to experimental dynamic breakdown voltage and electrical breakdown time delay data was also analyzed.