Design and characterization of a p+/n-well SPAD array in 150nm CMOS process: erratum.

An erratum is presented to correct a reference mistake in Table 1 in Sect. 4 of [Opt. Express25, 12765 (2017)].

Design and characterization of a p+/n-well SPAD array in 150nm CMOS process.

This paper reports on characterization results of a single-photon avalanche diode (SPAD) array in standard CMOS 150nm technology. The array is composed by 25 (5 × 5) SPADs, based on p+/n-well active junction along with a retrograde deep n-well guard ring. The square-shaped SPAD has a 10µm active diameter and 15.6µm pitch size, achieving a 39.9% array fill factor. Characterization results show a good breakdown voltage uniformity (40mV max-min) within each chip and 17mV/°C temperature coefficient. The median DCR is 0.4Hz/µm2, and the afterpulsing probability is 0.85% for a dead time of 150ns at 3V excess bias voltage. The peak PDP is 31% at 450nm wavelength and a good uniformity (1.1% standard deviation) is observed for the array at 5V excess bias. The single SPADs exhibit a timing jitter of 52ps (FWHM) and 42ps (FWHM) under a 468-nm and a 831-nm laser, respectively. The crosstalk probability as a function of pixel-to-pixel distance and excess bias voltage is presented, and random telegraph signal (RTS) noise is also discussed in detail.

Coincidence detection of spatially correlated photon pairs with a monolithic time-resolving detector array.

We demonstrate coincidence measurements of spatially entangled photons by means of a multi-pixel based detection array. The sensor, originally developed for positron emission tomography applications, is a fully digital 8×16 silicon photomultiplier array allowing not only photon counting but also per-pixel time stamping of the arrived photons with an effective resolution of 265 ps. Together with a frame rate of 500 kfps, this property exceeds the capabilities of conventional charge-coupled device cameras which have become of growing interest for the detection of transversely correlated photon pairs. The sensor is used to measure a second-order correlation function for various non-collinear configurations of entangled photons generated by spontaneous parametric down-conversion. The experimental results are compared to theory.

Compact SPAD-Based Pixel Architectures for Time-Resolved Image Sensors.

This paper reviews the state of the art of single-photon avalanche diode (SPAD) image sensors for time-resolved imaging. The focus of the paper is on pixel architectures featuring small pixel size (<25 µm) and high fill factor (>20%) as a key enabling technology for the successful implementation of high spatial resolution SPAD-based image sensors. A summary of the main CMOS SPAD implementations, their characteristics and integration challenges, is provided from the perspective of targeting large pixel arrays, where one of the key drivers is the spatial uniformity. The main analog techniques aimed at time-gated photon counting and photon timestamping suitable for compact and low-power pixels are critically discussed. The main features of these solutions are the adoption of analog counting techniques and time-to-analog conversion, in NMOS-only pixels. Reliable quantum-limited single-photon counting, self-referenced analog-to-digital conversion, time gating down to 0.75 ns and timestamping with 368 ps jitter are achieved.

Fast and simple spectral FLIM for biochemical and medical imaging.

Spectrally resolved fluorescence lifetime imaging microscopy (λFLIM) has powerful potential for biochemical and medical imaging applications. However, long acquisition times, low spectral resolution and complexity of λFLIM often narrow its use to specialized laboratories. Therefore, we demonstrate here a simple spectral FLIM based on a solid-state detector array providing in-pixel histrogramming and delivering faster acquisition, larger dynamic range, and higher spectral elements than state-of-the-art λFLIM. We successfully apply this novel microscopy system to biochemical and medical imaging demonstrating that solid-state detectors are a key strategic technology to enable complex assays in biomedical laboratories and the clinic.

A hybrid CMOS-imager with a solution-processable polymer as photoactive layer.

The solution-processability of organic photodetectors allows a straightforward combination with other materials, including inorganic ones, without increasing cost and process complexity significantly compared with conventional crystalline semiconductors. Although the optoelectronic performance of these organic devices does not outmatch their inorganic counterparts, there are certain applications exploiting the benefit of the solution-processability. Here we demonstrate that the small pixel fill factor of present complementary metal oxide semiconductor-imagers, decreasing the light sensitivity, can be increased up to 100% by replacing silicon photodiodes with an organic photoactive layer deposited with a simple low-cost spray-coating process. By performing a full optoelectronic characterization on this first solution-processable hybrid complementary metal oxide semiconductor-imager, including the first reported observation of different noise types in organic photodiodes, we demonstrate the suitability of this novel device for imaging. Furthermore, by integrating monolithically different organic materials to the chip, we show the cost-effective portability of the hybrid concept to different wavelength regions.

Video-rate fluorescence lifetime imaging camera with CMOS single-photon avalanche diode arrays and high-speed imaging algorithm.

A high-speed and hardware-only algorithm using a center of mass method has been proposed for single-detector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates from a 32 × 32 low dark count 0.13 µm complementary metal-oxide-semiconductor single-photon avalanche diode (SPAD) plus time-to-digital converter array. A simple look-up table is included to enhance the lifetime resolvability range and photon economics, making it comparable to the commonly used least-square method and maximum-likelihood estimation based software. To demonstrate its performance, a widefield microscope was adapted to accommodate the SPAD array and image different test samples. Fluorescence lifetime imaging microscopy on fluorescent beads in Rhodamine 6G at a frame rate of 50 fps is also shown.

Real-time fluorescence lifetime imaging system with a 32 x 32 0.13microm CMOS low dark-count single-photon avalanche diode array.

A compact real-time fluorescence lifetime imaging microscopy (FLIM) system based on an array of low dark count 0.13microm CMOS single-photon avalanche diodes (SPADs) is demonstrated. Fast background-insensitive fluorescence lifetime determination is achieved by use of a recently proposed algorithm called 'Integration for Extraction Method' (IEM) [J. Opt. Soc. Am. A 25, 1190 (2008)]. Here, IEM is modified for a wider resolvability range and implemented on the FPGA of the new SPAD array imager. We experimentally demonstrate that the dynamic range and accuracy of calculated lifetimes of this new camera is suitable for widefield FLIM applications by imaging a variety of test samples, including various standard fluorophores covering a lifetime range from 1.6ns to 16ns, microfluidic mixing of fluorophore solutions, and living fungal spores of Neurospora Crassa. The calculated lifetimes are in a good agreement with literature values. Real-time fluorescence lifetime imaging is also achieved, by performing parallel 32 x 16 lifetime calculations, realizing a compact and low-cost FLIM camera and promising for bigger detector arrays.

Fluorescence lifetime biosensing with DNA microarrays and a CMOS-SPAD imager.

Fluorescence lifetime of dye molecules is a sensitive reporter on local microenvironment which is generally independent of fluorophores concentration and can be used as a means of discrimination between molecules with spectrally overlapping emission. It is therefore a potentially powerful multiplexed detection modality in biosensing but requires extremely low light level operation typical of biological analyte concentrations, long data acquisition periods and on-chip processing capability to realize these advantages. We report here fluorescence lifetime data obtained using a CMOS-SPAD imager in conjunction with DNA microarrays and TIRF excitation geometry. This enables acquisition of single photon arrival time histograms for a 320 pixel FLIM map within less than 26 seconds exposure time. From this, we resolve distinct lifetime signatures corresponding to dye-labelled HCV and quantum-dot-labelled HCMV nucleic acid targets at concentrations as low as 10 nM.

A CMOS image sensor with programmable pixel-level analog processing.

A prototype of a 34 x 34 pixel image sensor, implementing real-time analog image processing, is presented. Edge detection, motion detection, image amplification, and dynamic-range boosting are executed at pixel level by means of a highly interconnected pixel architecture based on the absolute value of the difference among neighbor pixels. The analog operations are performed over a kernel of 3 x 3 pixels. The square pixel, consisting of 30 transistors, has a pitch of 35 microm with a fill-factor of 20%. The chip was fabricated in a 0.35 microm CMOS technology, and its power consumption is 6 mW with 3.3 V power supply. The device was fully characterized and achieves a dynamic range of 50 dB with a light power density of 150 nW/mm2 and a frame rate of 30 frame/s. The measured fixed pattern noise corresponds to 1.1% of the saturation level. The sensor's dynamic range can be extended up to 96 dB using the double-sampling technique.