ABSTRACT
We have designed, fabricated, and characterized a guided mode resonance notch filter operating in the technologically vital mid-wave infrared (MWIR) region of the electromagnetic spectrum. The filter provides a bandstop at λ≈4.1 µm, with a 12 dB extinction on resonance. In addition, we demonstrate a high transmission background (>80%), less than 6% transmission on resonance, and an ultra-narrow bandwidth transmission notch (10 cm-1). Our filter is optically characterized using angle- and polarization-dependent Fourier transform infrared spectroscopy, and simulated using rigorous coupled-wave analysis (RCWA) with excellent agreement between simulations and our experimental results. Using our RCWA simulations, we are able to identify the optical modes associated with the transmission dips of our filter. The presented structure offers a potential route toward narrow-band laser filters in the MWIR.
ABSTRACT
The responsivity of room-temperature, semiconductor-based photodetectors consisting of resonant RF circuits coupled to microstrip buslines is investigated. The dependence of the photodetector response on the semiconductor material and RF circuit geometry is presented, as is the detector response as a function of the spatial position of the incident light. We demonstrate significant improvement in detector response by choice of photoconductive material, and for a given material, by positioning our optical signal to overlap with positions of RF field enhancement. Design of RF circuits with strong field enhancement are demonstrated to further improve detector response. The improved detector response demonstrated offers opportunities for applications in RF photonics, materials metrology, or single read-out multiplexed detector arrays.
ABSTRACT
We present a review of existing and potential next-generation far-infrared (20-60 µm) optical materials and devices. The far-infrared is currently one of the few remaining frontiers on the optical spectrum, a space underdeveloped and lacking in many of the optical and optoelectronic materials and devices taken for granted in other, more technologically mature wavelength ranges. The challenges associated with developing optical materials, structures, and devices at these wavelengths are in part a result of the strong phonon absorption in the Reststrahlen bands of III-V semiconductors that collectively span the far-infrared. More than just an underexplored spectral band, the far-IR may also be of potential importance for a range of sensing applications in astrochemistry, biology, and industrial and geological processes. Additionally, with a suitable far-IR optical infrastructure, it is conceivable that even more applications could emerge. In this review, we will present recent progress on far-infrared materials and phenomena such as phononic surface modes, engineered composite materials, and optoelectronic devices that have the potential to serve as the next generation of components in a far-infrared optical tool-kit.
ABSTRACT
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of the dielectric layer. The absorption resonance is shown to be largely polarization-independent and angle-invariant. Upon heating, we observe selective thermal emission from our materials. Experimental data is compared to an analytical model of our structures with strong agreement.
