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Sensitivity and dynamic range of FGMOS dosemeters.
McNulty, P J; Poole, Kelvin F; Crissler, M; Reneau, J; Cellere, G; Paccagnella, A; Visconti, A; Bonanomi, M; Stroebel, Dave; Fennell, Michael; Perez, Roger.
Radiat Prot Dosimetry ; 122(1-4): 460-2, 2006.
Article in English | MEDLINE | ID: mdl-17387126

ABSTRACT

UVPROM memory devices employing FGMOS transistors as memory cells make excellent dosemeters for applications involving ionising radiation. With proper preparation and programming, these devices can be used in remote-sensing applications in high-radiation environments with no power required during exposure.


Subject(s)
Nanotechnology/instrumentation , Radiometry/instrumentation , Transistors, Electronic , Dose-Response Relationship, Radiation , Equipment Design , Equipment Failure Analysis , Miniaturization , Nanotechnology/methods , Radiation Dosage , Radiometry/methods , Reproducibility of Results , Sensitivity and Specificity
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