Highly Regular LIPSS on Thin Molybdenum Films: Optimization and Generic Criteria.

A systematic experimental study was performed to determine laser irradiation conditions for the large-area fabrication of highly regular laser-induced periodic surface structures (HR-LIPSS) on a 220 nm thick Mo film deposited on fused silica. The LIPSS were fabricated by scanning a linearly polarized, spatially Gaussian laser beam at 1030 nm wavelength and 1.4 ps pulse duration over the sample surface at 1 kHz repetition rate. Scanning electron microscope images of the produced structures were analyzed using the criterion of the dispersion of the LIPSS orientation angle (DLOA). Favorable conditions, in terms of laser fluence and beam scanning overlaps, were identified for achieving DLOA values <10∘. To gain insight into the material behavior under these irradiation conditions, a theoretical analysis of the film heating was performed, and surface plasmon polariton excitation is discussed. A possible effect of the film dewetting from the dielectric substrate is deliberated.

Nucleation and growth of metal-catalyzed silicon nanowires under plasma.

We report the results of a microscopic study of the nucleation and early growth stages of metal-catalyzed silicon nanowires in plasma-enhanced chemical vapor deposition. The nucleation of silicon nanowires is investigated as a function of different deposition conditions and metal catalysts (Sn, In and Au) using correlation of atomic force microscopy and scanning electron microscopy. This correlation method enabled us to visualize individual catalytic nanoparticles before and after the nanowire growth and identify the key parameters influencing the nanowire nucleation under plasma. The size and position of catalytic nanoparticles are found to play a significant role in the nucleation. We demonstrate that only small isolated nanoparticles in the range of 10-20 nm contribute to the nanowire growth under plasma, while larger nanoparticles are inactive because they get buried under a layer of a-Si:H before reaching supersaturation. Systematic analysis of different growth parameters reveals that the nanowire growth in plasma contradicts the vapor-liquid-solid mechanism at thermal equilibrium in many ways. The nanowire growth is much faster and proceeds even at negligible silicon solubility and bellow the eutectic temperature of the metal-silicon alloy. Based on the observations, we propose the nanowire growth under plasma to be characterized by the rapid solidification mechanism, where a crystalline silicon phase emerges from a metastable supersaturated liquid metal-silicon phase in local nonequilibrium.