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1.
Evidence for a stable excitonic ground state in a spatially separated electron-hole system.
Cheng J; Kono J; McCombe BD; Lo I; Mitchel WC; Stutz CE.
Phys Rev Lett ; 74(3): 450-453, 1995 Jan 16.
Article in English | MEDLINE | ID: mdl-10058761
2.
Temperature and many-body effects on the intersubband transition in a GaAs/Al0.3Ga0.7As multiple quantum well.
Szmulowicz F; Manasreh MO; Stutz CE; Vaughan T.
Phys Rev B Condens Matter ; 50(16): 11618-11623, 1994 Oct 15.
Article in English | MEDLINE | ID: mdl-9975294
3.
Magnetoluminescence studies in GaAs-AlxGa1-xAs single heterojunctions: Observation of parity-forbidden Landau-level transitions.
Reynolds DC; Look DC; Jogai B; Stutz CE; Jones R; Bajaj KK.
Phys Rev B Condens Matter ; 50(16): 11710-11713, 1994 Oct 15.
Article in English | MEDLINE | ID: mdl-9975306
4.
Cyclotron-resonance oscillations in a two-dimensional electron-hole system.
Kono J; McCombe BD; Cheng J; Lo I; Mitchel WC; Stutz CE.
Phys Rev B Condens Matter ; 50(16): 12242-12245, 1994 Oct 15.
Article in English | MEDLINE | ID: mdl-9975380
5.
Radiative recombination at the AlxGa1-xAs-GaAs heterostructure interface by two-dimensional excitons.
Reynolds DC; Look DC; Jogai B; Yu PW; Evans K; Stutz CE; Radomsky L.
Phys Rev B Condens Matter ; 50(11): 7461-7466, 1994 Sep 15.
Article in English | MEDLINE | ID: mdl-9974726
6.
Photoenhancement and photoquenching of the 0.68-eV EL2 photoluminescence emission in GaAs grown by molecular-beam epitaxy at low temperatures.
Yu PW; Capano MA; D'Agostino AT; Stutz CE.
Phys Rev B Condens Matter ; 49(23): 16398-16402, 1994 Jun 15.
Article in English | MEDLINE | ID: mdl-10010790
7.
Observation of free and bound excitons associated with the two-dimensional electron gas in modulation-doped heterostructures.
Reynolds DC; Look DC; Jogai B; Stutz CE.
Phys Rev B Condens Matter ; 49(16): 11456-11458, 1994 Apr 15.
Article in English | MEDLINE | ID: mdl-10010003
8.
0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures.
Yu PW; Robinson GD; Sizelove JR; Stutz CE.
Phys Rev B Condens Matter ; 49(7): 4689-4694, 1994 Feb 15.
Article in English | MEDLINE | ID: mdl-10011396
9.
Recombination of two-dimensional electrons with free light and heavy holes in AlxGa1-xAs-GaAs single heterojunctions in a magnetic field.
Reynolds DC; Look DC; Jogai B; Stutz CE.
Phys Rev B Condens Matter ; 48(23): 17168-17171, 1993 Dec 15.
Article in English | MEDLINE | ID: mdl-10008323
10.
Phonon coupling associated with free-to-bound and bound-to-bound transitions in GaAs layers grown by molecular-beam epitaxy.
Reynolds DC; Talwar DN; Manasreh MO; Stutz CE.
Phys Rev B Condens Matter ; 47(20): 13304-13308, 1993 May 15.
Article in English | MEDLINE | ID: mdl-10005635
11.
New AsGa related center in GaAs.
Look DC; Fang ZQ; Sizelove JR; Stutz CE.
Phys Rev Lett ; 70(4): 465-468, 1993 Jan 25.
Article in English | MEDLINE | ID: mdl-10054119
12.
Increased screening of the hydrogenic donor due to modulation doping in quantum wells.
Reynolds DC; Jogai B; Yu PW; Evans KR; Stutz CE.
Phys Rev B Condens Matter ; 46(23): 15274-15276, 1992 Dec 15.
Article in English | MEDLINE | ID: mdl-10003643
13.
Intersubband optical absorption in heavily doped n-type GaAs/Al0.3Ga0.7As multiple quantum wells.
Jogai B; Manasreh MO; Stutz CE; Whitney RL; Kinell DK.
Phys Rev B Condens Matter ; 46(11): 7208-7211, 1992 Sep 15.
Article in English | MEDLINE | ID: mdl-10002434
14.
Fine-structure features due to wave-function localization in coupled GaAs-AlxGa1-xAs quantum wells.
Reynolds DC; Evans KR; Jogai B; Stutz CE; Yu PW.
Phys Rev B Condens Matter ; 46(8): 4748-4751, 1992 Aug 15.
Article in English | MEDLINE | ID: mdl-10004233
15.
Indirect photoreflectance from high-electron-mobility transistor structures.
Sydor M; Engholm JR; Manasreh MO; Evans KR; Stutz CE; Mitchel WC.
Phys Rev B Condens Matter ; 45(23): 13796-13798, 1992 Jun 15.
Article in English | MEDLINE | ID: mdl-10001488
16.
Light- and heavy-hole free-exciton transitions in narrow InxGa1-xAs/GaAs quantum wells.
Reynolds DC; Evans KR; Stutz CE; Jogai B; Wie CR; Yu PW.
Phys Rev B Condens Matter ; 45(19): 11156-11160, 1992 May 15.
Article in English | MEDLINE | ID: mdl-10001037
17.
Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy.
von Bardeleben HJ; Manasreh MO; Look DC; Evans KR; Stutz CE.
Phys Rev B Condens Matter ; 45(7): 3372-3375, 1992 Feb 15.
Article in English | MEDLINE | ID: mdl-10001911
18.
Photoluminescence determination of the binding energy of residual donors in 300-Å GaAs/AlxGa1-xAs quantum wells.
Reynolds DC; Evans KR; Stutz CE; Bajaj KK; Yu PW.
Phys Rev B Condens Matter ; 44(16): 8869-8872, 1991 Oct 15.
Article in English | MEDLINE | ID: mdl-9998845
19.
Binding energy of excitons to neutral donors in In0.1Ga0.9As/GaAs quantum wells.
Reynolds DC; Evans KR; Stutz CE; Yu PW.
Phys Rev B Condens Matter ; 44(4): 1839-1843, 1991 Jul 15.
Article in English | MEDLINE | ID: mdl-9999722
20.
Photoluminescence due to a bound-to-bound transition in a GaAs-Al0.3Ga0.7As quantum-well structure.
Reynolds DC; Evans KR; Merkel KG; Stutz CE; Yu PW.
Phys Rev B Condens Matter ; 43(11): 9087-9095, 1991 Apr 15.
Article in English | MEDLINE | ID: mdl-9996577
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