High-performance GeSi/Ge multi-quantum well photodetector on a Ge-buffered Si substrate.

This work demonstrates a high-performance photodetector with a 4-cycle Ge0.86Si0.14/Ge multi-quantum well (MQW) structure grown by reduced pressure chemical vapor deposition techniques on a Ge-buffered Si (100) substrate. At -1 V bias, the dark current density of the fabricated PIN mesa devices is as low as 3 mA/cm2, and the optical responsivities are 0.51 and 0.17 A/W at 1310 and 1550 nm, respectively, corresponding to the cutoff wavelength of 1620 nm. At the same time, the device has good high-power performance and continuous repeatable light response. On the other hand, the temperature coefficient of resistance (TCR) of the device is as high as -5.18%/K, surpassing all commercial thermal detectors. These results indicate that the CMOS-compatible and low-cost Ge0.86Si0.14/Ge multilayer structure is promising for short-wave infrared and uncooled infrared imaging.

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.

After more than five decades, Moore's Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unknown. In this era, 3D transistors in the form of gate-all-around (GAA) transistors are being considered as an excellent solution to scaling down beyond the 5 nm technology node, which solves the difficulties of carrier transport in the channel region which are mainly rooted in short channel effects (SCEs). In parallel to Moore, during the last two decades, transistors with a fully depleted SOI (FDSOI) design have also been processed for low-power electronics. Among all the possible designs, there are also tunneling field-effect transistors (TFETs), which offer very low power consumption and decent electrical characteristics. This review article presents new transistor designs, along with the integration of electronics and photonics, simulation methods, and continuation of CMOS process technology to the 5 nm technology node and beyond. The content highlights the innovative methods, challenges, and difficulties in device processing and design, as well as how to apply suitable metrology techniques as a tool to find out the imperfections and lattice distortions, strain status, and composition in the device structures.

Evaporated Nickel Oxide Films with Slow Annealing and Interface Modification for Perovskite Solar Cells.

Electron-beam-evaporated nickel oxide (NiOx) films are known for their high quality, precise control, and suitability for complex structures in perovskite (PVK) solar cells (PSCs). However, untreated NiOx films have inherent challenges, such as surface defects, relatively low intrinsic conductivity, and shallow valence band maximum, which seriously restrict the efficiency and stability of the devices. To address these challenges, we employ a dual coordination optimization strategy. The strategy includes low heating rate annealing of NiOx films and using an aminoguanidine nitrate spin coating process on the surfaces of NiOx films to strategically modify NiOx films itself and the interface of NiOx/PVK. Under the synergistic effect of this dual optimization method, the quality of the films is significantly improved and its p-type characteristics are enhanced. At the same time, the interface defects and energy level alignment of the films are effectively improved, and the charge extraction ability at the interface is improved. The combined treatment significantly improved the efficiency of inverted PSCs, from 17.85% to 20.31%, and enhanced device stability under various conditions. This innovative dual-coordinated optimization strategy provides a clear and effective framework for improving the performance of NiOx films and inverted PSCs.

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions.

SiGe/Si multilayer is the core structure of the active area of gate-all-around field-effect transistors and semiconductor quantum computing devices. In this paper, high-quality SiGe/Si multilayers have been grown by a reduced-pressure chemical vapor deposition system. The effects of temperature, pressure, interface processing (dichlorosilane (SiH2Cl2, DCS) and hydrogen chloride (HCl)) on improving the transition thickness of SiGe to Si interfaces were investigated. The interface quality was characterized by transmission electron microscopy/atomic force microscopy/high-resolution X-ray diffraction methods. It was observed that limiting the migration of Ge atoms in the interface was critical for optimizing a sharp interface, and the addition of DCS was found to decrease the interface transition thickness. The change of the interfacial transition layer is not significant in the short treatment time of HCl. When the processing time of HCl is increased, the internal interface is optimized to a certain extent but the corresponding film thickness is also reduced. This study provides technical support for the acquisition of an abrupt interface and will have a very favorable influence on the performance improvement of miniaturized devices in the future.

Influence of Volatile Organic Compound Adsorption on the Characteristics of Organic Field-Effect Transistors and Rules for Gas-Sensing Measurements.

Owing to the advantages of organic field-effect transistors (OFETs) in the versatility of organic synthesis, multiparameter measurement, and signal amplification, sensors based on OFETs have received increasing attention for detecting volatile organic compounds (VOCs). However, false device operation and gas-sensing measurements often occur to vitiate the advantages of OFETs and even output error gas-sensing signals. In this work, by experimentally and theoretically studying the effects of VOC adsorption on the operational characteristics of the OFET, the proper operations of OFETs in gas-sensing measurements were clarified. The multiparameter measurements of OFETs showed that the source-drain current was the optimized parameter for achieving high responsivity, and other OFET parameters could be used for fingerprint analysis. By operating OFETs in the near-threshold region, the amplification effect was switched to enhance the responsivity by orders of magnitude to VOCs, while in the overthreshold region, the OFETs had a low signal-to-noise ratio. Besides, a counteraction effect and an uncertainty effect were discovered, leading to error gas-sensing signals. A theoretical study was carried out to reveal the dependency of the gas-sensing properties of OFETs on VOC adsorption. A series of rules were proposed for guiding the measurements of OFET sensors by taking full advantage of transistors in gas-sensing applications.

Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million.

We develop a method to fabricate an undoped Ge quantum well (QW) under a 32 nm relaxed Si0.2Ge0.8 shallow barrier. The bottom barrier contains Si0.2Ge0.8 (650 °C) and Si0.1Ge0.9 (800 °C) such that variation of Ge content forms a sharp interface that can suppress the threading dislocation density (TDD) penetrating into the undoped Ge quantum well. The SiGe barrier introduces enough in-plane parallel strain (ε∥ strain -0.41%) in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel obtain an ultrahigh two-dimensional hole gas (2DHG) mobility over 2 × 106 cm2/(V s) and a very low percolation density of (5.689 ± 0.062) × 1010 cm-2. The fractional indication is also observed at high density and high magnetic fields. This strained germanium as a noise mitigation material provides a platform for integration of quantum computation with a long coherence time and fast all-electrical manipulation.

Genome-Wide Analysis of the Rhododendron AP2/ERF Gene Family: Identification and Expression Profiles in Response to Cold, Salt and Drought Stress.

The AP2/ERF gene family is one of the most conserved and important transcription factor families mainly occurring in plants with various functions in regulating plant biological and physiological processes. However, little comprehensive research has been conducted on the AP2/ERF gene family in Rhododendron (specifically, Rhododendron simsii), an important ornamental plant. The existing whole-genome sequence of Rhododendron provided data to investigate the AP2/ERF genes in Rhododendron on a genome-wide scale. A total of 120 Rhododendron AP2/ERF genes were identified. The phylogenetic analysis showed that RsAP2 genes were classified into five main subfamilies, AP2, ERF, DREB, RAV and soloist. Cis-acting elements involving plant growth regulators, response to abiotic stress and MYB binding sites were detected in the upstream sequences of RsAP2 genes. A heatmap of RsAP2 gene expression levels showed that these genes had different expression patterns in the five developmental stages of Rhododendron flowers. Twenty RsAP2 genes were selected for quantitative RT-PCR experiments to clarify the expression level changes under cold, salt and drought stress treatments, and the results showed that most of the RsAP2 genes responded to these abiotic stresses. This study generated comprehensive information on the RsAP2 gene family and provides a theoretical basis for future genetic improvement.

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region.

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.

The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate, we employed an engineered Ge-buffer on Si, used thermal cycle annealing, and introduced filtering layers, e.g., strained-layer superlattices, to control/reduce the threading dislocation density in the active part of the laser. In this way, a low defect density of 2.9 × 107 cm-2 could be achieved in the GaAs layer with a surface roughness of 1.01 nm. Transmission electron microscopy has been applied to study the effect of cycling, annealing, and filtering layers for blocking or bending threading-dislocation into the InAs QDs active region of the laser. In addition, the dependence of optical properties of InAs QDs on the growth temperature was also investigated. The results show that a density of 3.4 × 1010 InAs quantum dots could be grown at 450 °C, and the photoluminescence exhibits emission wavelengths of 1274 nm with a fullwidth at half-maximum (FWHM) equal to 32 nm at room temperature. The laser structure demonstrates a peak at 1.27 µm with an FWHM equal to 2.6 nm under a continuous-wave operation with a threshold current density of ∼158 A/cm2 for a 4-µm narrow-ridge width InAs QD device. This work, therefore, paves the path for a monolithic solution for photonic integrated circuits when III-V light sources (which is required for Si photonics) are grown on a Ge-platform (engineered Ge-buffer on Si) for the integration of the CMOS part with other photonic devices on the same chip in near future.

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual substrate on Si wafer. No patterned substrate or sophisticated superlattice defect-filtering layer was involved. Thanks to the improved quality of the comprehensively modified GaAs crystal with low defect density, the room temperature emission wavelength of this laser was allocated at 1320 nm, with a threshold current density of 24.4 A/cm-2 per layer and a maximum single-facet output power reaching 153 mW at 10 °C. The maximum operation temperature reaches 80 °C. This work provides a feasible and promising proposal for the integration of an efficient O-band laser with a standard Si platform in the near future.

Nanometer-Thick ZnO/SnO2 Heterostructures Grown on Alumina for H2S Sensing.

Designing heterostructure materials at the nanoscale is a well-known method to enhance gas sensing performance. In this study, a mixed solution of zinc chloride and tin (II) chloride dihydrate, dissolved in ethanol solvent, was used as the initial precursor for depositing the sensing layer on alumina substrates using the ultrasonic spray pyrolysis (USP) method. Several ZnO/SnO2 heterostructures were grown by applying different ratios in the initial precursors. These heterostructures were used as active materials for the sensing of H2S gas molecules. The results revealed that an increase in the zinc chloride in the USP precursor alters the H2S sensitivity of the sensor. The optimal working temperature was found to be 450 °C. The sensor, containing 5:1 (ZnCl2: SnCl2·2H2O) ratio in the USP precursor, demonstrates a higher response than the pure SnO2 (∼95 times) sample and other heterostructures. Later, the selectivity of the ZnO/SnO2 heterostructures toward 5 ppm NO2, 200 ppm methanol, and 100 ppm of CH4, acetone, and ethanol was also examined. The gas sensing mechanism of the ZnO/SnO2 was analyzed and the remarkably enhanced gas-sensing performance was mainly attributed to the heterostructure formation between ZnO and SnO2. The synthesized materials were also analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and X-ray photoelectron spectra to investigate the material distribution, grain size, and material quality of ZnO/SnO2 heterostructures.

Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.

In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect density (TDD) was successfully decreased from 2.9 × 107 cm-2 in a globally grown Ge layer to 3.2 × 105 cm-2 for a single-step SEG and to 2.84 × 105 cm-2 for the dual-step SEG of the Ge layer. This means that by introducing a single SEG step, the defect density could be reduced by two orders of magnitude, but this reduction could be further decreased by only 11.3% by introducing the second SEG step. The final root mean square (RMS) of the surface roughness was 0.64 nm. The strain has also been modulated along the cross-section of the sample. Tensile strain appears in the first global Ge layer, compressive strain in the single-step Ge layer and fully strain relaxation in the dual-step Ge layer. The material characterization was locally performed at different points by high resolution transmission electron microscopy, while it was globally performed by high resolution X-ray diffraction and photoluminescence.

Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs.

In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel material with a highly compressive strain. Two etching methods, the wet etching and in situ HCl dry etching methods, were studied to achieve a better etching topography. In addition, the selective epitaxial growth of Ge material was performed on a patterned substrate using reduced pressure chemical vapor deposition. The results show that a V-shaped structure formed at the bottom of the dummy Si-fins using the wet etching method, which is beneficial to the suppression of dislocations. In addition, compressive strain was introduced to the Ge channel after the Ge selective epitaxial growth, which benefits the pMOS transport characteristics. The pattern dependency of the Ge growth over the patterned wafer was measured, and the solutions for uniform epitaxy are discussed.

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications.

GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285-320 °C by using SnCl4 and GeH4 precursors. A series of characterizations were performed to study the material quality, strain, surface roughness, and optical properties of GeSn layers. The Sn content could be calculated using lattice mismatch parameters provided by X-ray analysis. The strain in GeSn layers was modulated from fully strained to partially strained by etching Ge buffer into Ge/GeSn heterostructures . In this study, two categories of samples were prepared when the Ge buffer was either laterally etched onto Si wafers, or vertically etched Ge/GeSnOI wafers which bonded to the oxide. In the latter case, the Ge buffer was initially etched step-by-step for the strain relaxation study. Meanwhile, the Ge/GeSn heterostructure in the first group of samples was patterned into the form of micro-disks. The Ge buffer was selectively etched by using a CF4/O2 gas mixture using a plasma etch tool. Fully or partially relaxed GeSn micro-disks showed photoluminescence (PL) at room temperature. PL results showed that red-shift was clearly observed from the GeSn micro-disk structure, indicating that the compressive strain in the as-grown GeSn material was partially released. Our results pave the path for the growth of high quality GeSn layers with high Sn content, in addition to methods for modulating the strain for lasing and detection of short-wavelength infrared at room temperature.

Comparative transcriptome analyses reveal genes related to pigmentation in the petals of a flower color variation cultivar of Rhododendron obtusum.

BACKGROUND: Rhododendron is an important woody ornamental plant, and breeding varieties with different colors is a key research goal. Although there have been a few reports on the molecular mechanisms of flower colors and color patterning in Rhododendron, it is still largely unknown what factors regulate flower pigmentation in Rhododendron. METHODS AND RESULTS: In this study, the flower color variation cultivar 'Yanzhi Mi' and the wild-type (WT) cultivar 'Dayuanyangjin' were used as research objects, and the pigments and transcriptomes of their petals during five flower development stages were analyzed and compared. The results showed that derivatives of cyanidin, peonidin and pelargonidin might be responsible for the pink color of mutant petals and that the S2 stage was the key stage of flower color formation. In total, 412,910 transcripts and 2780 differentially expressed genes (DEGs) were identified in pairwise comparisons of WT and mutant petals. GO and KEGG enrichment analyses of the DEGs showed that 'DNA-binding transcription factor activity', 'Flavonoid biosynthesis' and 'Phenylpropanoid biosynthesis' were more active in mutant petals. Early anthocyanin pathway candidate DEGs (CHS3-CHS6, CHI, F3Hs and F3'H) were significantly correlated and were more highly expressed in mutant petals than in WT petals in the S2 stage. An R2R3-MYB unigene (TRINITY_DN55156_c1_g2) was upregulated approximately 10.5-fold in 'Yanzhi Mi' petals relative to 'Dayuanyangjin' petals in the S2 stage, and an R2R3-MYB unigene (TRINITY_DN59015_c3_g2) that was significantly downregulated in 'Yanzhi Mi' petals in the S2 stage was found to be closely related to Tca MYB112 in cacao. CONCLUSIONS: Taken together, the results of the present study could shed light on the molecular basis of anthocyanin biosynthesis in two Rhododendron obtusum cultivars and may provide a genetic resource for breeding varieties with different flower colors.

Strain Modulation of Selectively and/or Globally Grown Ge Layers.

This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a planarization using CMP as initial process steps. The growth parameters of the Ge layer were carefully optimized and after cycle-annealing treatments, the threading dislocation density (TDD) was reduced to 3 × 107 cm-2. As a result of this process, a tensile strain of 0.25% was induced, whereas the RMS value was as low as 0.81 nm. Later, these substrates were covered by an oxide layer and patterned to create trenches for selective epitaxy growth (SEG) of the Ge layer. In these structures, a type of compressive strain was formed in the SEG Ge top layer. The strain amount was -0.34%; meanwhile, the TDD and RMS surface roughness were 2 × 106 cm-2 and 0.68 nm, respectively. HRXRD and TEM results also verified the existence of compressive strain in selectively grown Ge layer. In contrast to the tensile strained Ge layer (globally grown), enhanced PL intensity by a factor of more than 2 is partially due to the improved material quality. The significantly high PL intensity is attributed to the improved crystalline quality of the selectively grown Ge layer. The change in direct bandgap energy of PL was observed, owing to the compressive strain introduced. Hall measurement shows that a selectively grown Ge layer possesses room temperature hole mobility up to 375 cm2/Vs, which is approximately 3 times larger than that of the Ge (132 cm2/Vs). Our work offers fundamental guidance for the growth of high-quality and compressive strain Ge epilayer on Si for future Ge-based optoelectronics integration applications.

The Effect of Doping on the Digital Etching of Silicon-Selective Silicon-Germanium Using Nitric Acids.

Gate-all-around (GAA) field-effect transistors have been proposed as one of the most important developments for CMOS logic devices at the 3 nm technology node and beyond. Isotropic etching of silicon-germanium (SiGe) for the definition of nano-scale channels in vertical GAA CMOS and tunneling FETs has attracted more and more attention. In this work, the effect of doping on the digital etching of Si-selective SiGe with alternative nitric acids (HNO3) and buffered oxide etching (BOE) was investigated in detail. It was found that the HNO3 digital etching of SiGe was selective to n+-Si, p+-Si, and intrinsic Si. Extensive studies were performed. It turned out that the selectivity of SiGe/Si was dependent on the doped types of silicon and the HNO3 concentration. As a result, at 31.5% HNO3 concentration, the relative etched amount per cycle (REPC) and the etching selectivity of Si0.72Ge0.28 for n+-Si was identical to that for p+-Si. This is particularly important for applications of vertical GAA CMOS and tunneling FETs, which have to expose both the n+ and p+ sources/drains at the same time. In addition, the values of the REPC and selectivity were obtained. A controllable etching rate and atomically smooth surface could be achieved, which enhanced carrier mobility.

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform.

In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 µm, the dark current at -1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at -1 V are as low as 1.79 mA/cm2 and 0.34 µA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxide side due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip.

Grating-enabled high-speed high-efficiency surface-illuminated silicon photodiodes.

High-speed, high-efficiency silicon photodetectors play important roles in the optical communication links that are used increasingly in data centers to handle the increasing volumes of data traffic and higher bandwidths required as use of big data and cloud computing continues to grow exponentially. Monolithic integration of the optical components with signal processing electronics on a single silicon chip is of paramount importance in the drive to reduce costs and improve performance. Here we report grating-enhanced light absorption in a silicon photodiode. The absorption efficiency is determined theoretically to be as high as 77% at 850 nm for the optimal structure, which has a thin intrinsic absorption layer with a thickness of 220 nm. The fabricated devices demonstrate a high bandwidth of 11.3 GHz and improved radio-frequency output power of more than 14 dB, thus making them suitable for use in data center optical communications.

Single-molecule long-read sequencing of the full-length transcriptome of Rhododendron lapponicum L.

Rhododendron lapponicum L. is a familiar ornamental plant worldwide with important ornamental and economic value. However, a full-length R. lapponicum transcriptome is still lacking. In the present study, we used the Pacific Biosciences single-molecule real-time sequencing technology to generate the R. lapponicum transcriptome. A total of 346,270 full-length non-chimeric reads were generated, from which we obtained 75,002 high-quality full-length transcripts. We identified 55,255 complete open reading frames, 7,140 alternative splicing events and 2,011 long non-coding RNAs. In gene annotation analyses, 71,155, 33,653, 30,359 and 31,749 transcripts were assigned to the Nr, GO, COG and KEGG databases, respectively. Additionally, 3,150 transcription factors were detected. KEGG pathway analysis showed that 96 transcripts were identified coding for the enzymes associated with anthocyanin synthesis. Furthermore, we identified 64,327 simple sequence repeats from 45,319 sequences, and 150 pairs of primers were randomly selected to develop SSR markers. This study provides a large number of full-length transcripts, which will facilitate the further study of the genetics of R. lapponicum.