Group Velocity Modulation and Light Field Focusing of the Edge States in Chirped Valley Graphene Plasmonic Metamaterials.

The valley degree of freedom, like the spin degree of freedom in spintronics, is regarded as a new information carrier, promoting the emerging valley photonics. Although there exist topologically protected valley edge states which are immune to optical backscattering caused by defects and sharp edges at the inverse valley Hall phase interfaces composed of ordinary optical dielectric materials, the dispersion and the frequency range of the edge states cannot be tuned once the geometrical parameters of the materials are determined. In this paper, we propose a chirped valley graphene plasmonic metamaterial waveguide composed of the valley graphene plasmonic metamaterials (VGPMs) with regularly varying chemical potentials while keeping the geometrical parameters constant. Due to the excellent tunability of graphene, the proposed waveguide supports group velocity modulation and zero group velocity of the edge states, where the light field of different frequencies focuses at different specific locations. The proposed structures may find significant applications in the fields of slow light, micro-nano-optics, topological plasmonics, and on-chip light manipulation.

Chiral graphene plasmonic Archimedes' spiral nanostructure with tunable circular dichroism and enhanced sensing performance.

Circular dichroism spectroscopy is frequently used to characterize the chiral biomolecules by measuring the absorption spectra contrast between the left-handed circularly polarized light and the right-handed circularly polarized light. Compared with biomolecules, chiral metal plasmonic nanostructures also produce a strong circular dichroism response in the range of near-infrared. However, due to the large damping rate, the non-adjustable resonant frequency of the conventional metals, the applications of chiral metal plasmonic nanostructures in the fields of photoelectric detection and chemical and biochemical sensing are restricted. Here, we present a chiral graphene plasmonic Archimedes' spiral nanostructure that displays a significant circular dichroism response under the excitation of two polarizations of circularly polarized light. By manipulating the material and geometric parameters of the Archimedes' spiral, the stronger circular dichroism responses and modulation of the resonant wavelength are achieved. The optimized plasmonic nanostructure has outstanding refractive index sensing performance, where the sensitivity and figure of merit reach 7000nm/RIU and 68.75, respectively. Our proposed chiral graphene plasmonic Archimedes' spiral nanostructure might find potential applications in the fields of optical detection and high performance of index sensing.

"Fast" Plasmons Propagating in Graphene Plasmonic Waveguides with Negative Index Metamaterial Claddings.

We propose the monolayer graphene plasmonic waveguide (MGPW), which is composed of graphene core sandwiched by two graphene metamaterial (GMM) claddings and investigate the properties of plasmonic modes propagating in the waveguide. The effective refraction index of the GMMs claddings takes negative (or positive) at the vicinity of the Dirac-like point in the band structure. We show that when the effective refraction index of the GMMs is positive, the plasmons travel forward in the MGPW with a positive group velocity (vg > 0, vp > 0). In contrast-for the negative refraction index GMM claddings-a negative group velocity of the fundamental mode (vg < 0, vp > 0) appears in the proposed waveguide structure when the core is sufficiently narrow. A forbidden band appears between the negative and positive group velocity regions, which is enhanced gradually as the width of the core increases. On the other hand, one can overcome this limitation and even make the forbidden band disappear by increasing the chemical potential difference between the nanodisks and the ambient graphene of the GMM claddings. The proposed structure offers a novel scheme of on-chip electromagnetic field and may find significant applications in the future high density plasmonic integrated circuit technique.

Multiple Fano Resonances with Tunable Electromagnetic Properties in Graphene Plasmonic Metamolecules.

Multiple Fano resonances (FRs) can be produced by destroying the symmetry of structure or adding additional nanoparticles without changing the spatial symmetry, which has been proved in noble metal structures. However, due to the disadvantages of low modulation depth, large damping rate, and broadband spectral responses, many resonance applications are limited. In this research paper, we propose a graphene plasmonic metamolecule (PMM) by adding an additional 12 nanodiscs around a graphene heptamer, where two Fano resonance modes with different wavelengths are observed in the extinction spectrum. The competition between the two FRs as well as the modulation depth of each FR is investigated by varying the materials and the geometrical parameters of the nanostructure. A simple trimer model, which emulates the radical distribution of the PMM, is employed to understand the electromagnetic field behaviors during the variation of the parameters. Our proposed graphene nanostructures might find significant applications in the fields of single molecule detection, chemical or biochemical sensing, and nanoantenna.

Strain field mapping of dislocations in a Ge/Si heterostructure.

Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, which are the most efficient way for obtaining a fully relaxed Ge film. The only defect found in the Ge epitaxial film was a 60° dislocation. The nanoscale strain field of the dislocations was mapped by geometric phase analysis technique from the HRTEM image. The strain field around the edge component of the 60° dislocation core was compared with those of the Peierls-Nabarro and Foreman dislocation models. Comparison results show that the Foreman model with a = 1.5 can describe appropriately the strain field around the edge component of a 60° dislocation core in a relaxed Ge film on a Si substrate.

Full-Field Strain Mapping at a Ge/Si Heterostructure Interface.

The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si heterostructure interface were mapped by using the geometric phase analysis (GPA) and peak pairs analysis (PPA), respectively. The effect of the mask size on the GPA and PPA results was analyzed in detail. For comparison, the theoretical strain fields of the misfit dislocations were also calculated by the Peierls-Nabarro and Foreman dislocation models. The results showed that the optimal mask sizes in GPA and PPA were approximately three tenths and one-tenth of the reciprocal lattice vector, respectively. The Foreman dislocation model with an alterable factor a = 4 can best describe the strain field of the misfit dislocation at the Ge/Si heterostructure interface.

Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si001 substrates by phosphorus-doping.

Ge/Si heterojunction light emitting diodes with 20-bilayers undoped or phosphorus in situ doped GeSi islands were fabricated on n(+)(-)Si(001) substrates by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Enhanced room temperature photoluminescence (PL) and electroluminescence (EL) around 1.5 µm were observed from the devices with phosphorus-doped GeSi islands. Theoretical calculations indicated that the emission is from the radiative recombination in GeSi islands. The intensity enhancement of PL and EL is attributed to the sufficient supply of electrons in active layer for radiative recombination.

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

GeSn p-i-n photodetector for all telecommunication bands detection.

Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.