Valence-Ordered Thin-Film Nickelate with Tri-component Nickel Coordination Prepared by Topochemical Reduction.

The metal-hydride-based "topochemical reduction" process has produced several thermodynamically unstable phases across various transition metal oxide series with unusual crystal structures and nontrivial ground states. Here, by such an oxygen (de-)intercalation method we synthesis a samarium nickelate with ordered nickel valences associated with tri-component coordination configurations. This structure, with a formula of Sm9Ni9O22 as revealed by four-dimensional scanning transmission electron microscopy (4D-STEM), emerges from the intricate planes of {303}pc ordered apical oxygen vacancies. X-ray spectroscopy measurements and ab initio calculations show the coexistence of square planar, pyramidal, and octahedral Ni sites with mono-, bi-, and tri-valences. It leads to an intense orbital polarization, charge-ordering, and a ground state with a strong electron localization marked by the disappearance of ligand-hole configuration at low temperature. This nickelate compound provides another example of previously inaccessible materials enabled by topotactic transformations and presents an interesting platform where mixed Ni valence can give rise to exotic phenomena.

Minority-spin conducting states in Fe substituted pyrite CoS2.

There has been a longstanding debate whether the pyrite CoS2or its alloys with FeS2are half metallic. We argue using first principles calculations that there is a finite occupation of minority-spin states at the Fermi level throughout the series Co1-xFexS2. Although the exchange-correlation functional influences the specifics of the electronic structure, we observe a similar trend with increasing Fe concentration in both local density approximation and generalized gradient approximation calculations. Specifically, even as band filling is decreased through Fe substitution, the lowest-lying conduction band in the minority-spin channel broadens such that these states keep getting lowered relative to the Fermi level, which is contrary to the expectations from a rigid band picture. Furthermore, the exchange splitting decreases as more Co atoms are replaced by Fe, and this again brings the minority-spin states closer to the Fermi level. These two mechanisms, in conjunction with the experimental observation that minority-spin bands cross the Fermi level in stoichiometric CoS2, indicate that minority-spin charge carriers will always be present in Co1-xFexS2.

The phonon thermal Hall angle in black phosphorus.

The origin of phonon thermal Hall Effect (THE) observed in a variety of insulators is yet to be identified. Here, we report on the observation of a thermal Hall conductivity in a non-magnetic elemental insulator, with an amplitude exceeding what has been previously observed. In black phosphorus (BP), the longitudinal (κii), and the transverse, κij, thermal conductivities peak at the same temperature and at this peak temperature, the κij/κjj/B is ≈ 10-4-10-3 T-1. Both these features are shared by other insulators displaying THE, despite an absolute amplitude spreading over three orders of magnitude. The absence of correlation between the thermal Hall angle and the phonon mean-free-path imposes a severe constraint for theoretical scenarios of THE. We show that in BP a longitudinal and a transverse acoustic phonon mode anti-cross, facilitating wave-like transport across modes. The anisotropic charge distribution surrounding atomic bonds can pave the way for coupling between phonons and the magnetic field.

Observation of Poiseuille flow of phonons in black phosphorus.

The travel of heat in insulators is commonly pictured as a flow of phonons scattered along their individual trajectory. In rare circumstances, momentum-conserving collision events dominate, and thermal transport becomes hydrodynamic. One of these cases, dubbed the Poiseuille flow of phonons, can occur in a temperature window just below the peak temperature of thermal conductivity. We report on a study of heat flow in bulk black phosphorus between 0.1 and 80 K. We find a thermal conductivity showing a faster than cubic temperature dependence between 5 and 12 K. Consequently, the effective phonon mean free path shows a nonmonotonic temperature dependence at the onset of the ballistic regime, with a size-dependent Knudsen minimum. These are hallmarks of Poiseuille flow previously observed in a handful of solids. Comparing the phonon dispersion in black phosphorus and silicon, we show that the phase space for normal scattering events in black phosphorus is much larger. Our results imply that the most important requirement for the emergence of Poiseuille flow is the facility of momentum exchange between acoustic phonon branches. Proximity to a structural transition can be beneficial for the emergence of this behavior in clean systems, even when they do not exceed silicon in purity.

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials.

Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strong competition between ionic and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO3, BiFeO3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. This different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.

The performance of in situ grown Schottky-barrier single wall carbon nanotube field-effect transistors.

Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohmic contacts. In Schottky-barrier field-effect transistors the device performance is dominated by the Schottky barrier and the nanotube defects have little effect. We also observed strong rectifying behavior attributed to extreme contact asymmetry due to the different nanoscale roughness of the gold contacts formed during nanotube growth.