Transfer-printing-based integration of single-mode waveguide-coupled III-V-on-silicon broadband light emitters.

We present the first III-V opto-electronic components transfer printed on and coupled to a silicon photonic integrated circuit. Thin InP-based membranes are transferred to an SOI waveguide circuit, after which a single-spatial-mode broadband light source is fabricated. The process flow to create transfer print-ready coupons is discussed. Aqueous FeCl3 at 5°C was found to be the best release agent in combination with the photoresist anchoring structures that were used. A thin DVS-BCB layer provides a strong bond, accommodating the post-processing of the membranes. The resulting optically pumped LED has a 3 dB bandwidth of 130 nm, comparable to devices realized using a traditional die-to-wafer bonding method.

Efficiency of evanescent excitation and collection of spontaneous Raman scattering near high index contrast channel waveguides.

We develop and experimentally verify a theoretical model for the total efficiency η0 of evanescent excitation and subsequent collection of spontaneous Raman signals by the fundamental quasi-TE and quasi-TM modes of a generic photonic channel waveguide. Single-mode silicon nitride (Si3N4) slot and strip waveguides of different dimensions are used in the experimental study. Our theoretical model is validated by the correspondence between the experimental and theoretical absolute values within the experimental errors. We extend our theoretical model to silicon-on-insulator (SOI) and titanium dioxide (TiO2) channel waveguides and study η0 as a function of index contrast, polarization of the mode and the geometry of the waveguides. We report nearly 2.5 (4 and 5) times larger η0 for the fundamental quasi-TM mode when compared to η0 for the fundamental quasi-TE mode of a typical Si3N4 (TiO2 and SOI) strip waveguide. η0 for the fundamental quasi-TE mode of a typical Si3N4, (TiO2 and SOI) slot waveguide is about 7 (22 and 90) times larger when compared to η0 for the fundamental quasi-TE mode of a strip waveguide of the similar dimensions. We attribute the observed enhancement to the higher electric field discontinuity present in high index contrast waveguides.

Gold nanodome-patterned microchips for intracellular surface-enhanced Raman spectroscopy.

While top-down substrates for surface-enhanced Raman spectroscopy (SERS) offer outstanding control and reproducibility of the gold nanopatterns and their related localized surface plasmon resonance, intracellular SERS experiments heavily rely on gold nanoparticles. These nanoparticles often result in varying and uncontrollable enhancement factors. Here we demonstrate the use of top-down gold-nanostructured microchips for intracellular sensing. We develop a tunable and reproducible fabrication scheme for these microchips. Furthermore we observe the intracellular uptake of these structures, and find no immediate influence on cell viability. Finally, we perform a proof-of-concept intracellular SERS experiment by the label-free detection of extraneous molecules. By bringing top-down SERS substrates to the intracellular world, we set an important step towards time-dependent and quantitative intracellular SERS.

Bright and dark plasmon resonances of nanoplasmonic antennas evanescently coupled with a silicon nitride waveguide.

In this work we investigate numerically and experimentally the resonance wavelength tuning of different nanoplasmonic antennas excited through the evanescent field of a single mode silicon nitride waveguide and study their interaction with this excitation field. Experimental interaction efficiencies up to 19% are reported and it is shown that the waveguide geometry can be tuned in order to optimize this interaction. Apart from the excitation of bright plasmon modes, an efficient coupling between the evanescent field and a dark plasmonic resonance is experimentally demonstrated and theoretically explained as a result of the propagation induced phase delay.

Evanescent excitation and collection of spontaneous Raman spectra using silicon nitride nanophotonic waveguides.

We experimentally demonstrate the use of high contrast, CMOS-compatible integrated photonic waveguides for Raman spectroscopy. We also derive the dependence of collected Raman power with the waveguide parameters and experimentally verify the derived relations. Isopropyl alcohol (IPA) is evanescently excited and detected using single-mode silicon-nitride strip waveguides. We analyze the measured signal strength of pure IPA corresponding to an 819 cm⁻¹ Raman peak due to in-phase C-C-O stretch vibration for several waveguide lengths and deduce a pump power to Raman signal conversion efficiency on the waveguide to be at least 10⁻¹¹ per cm.

Impact of ALD grown passivation layers on silicon nitride based integrated optic devices for very-near-infrared wavelengths.

A CMOS compatible post-processing method to reduce optical losses in silicon nitride (Si(3)N(4)) integrated optical waveguides is demonstrated. Using thin layer atomic layer deposition (ALD) of aluminum oxide (Al(2)O(3)) we demonstrate that surface roughness can be reduced. A 40 nm thick Al(2)O(3) layer is deposited by ALD over Si(3)N(4) based strip waveguides and its influence on the surface roughness and the waveguide loss is studied. As a result, an improvement in the waveguide loss, from very high loss (60 dB/cm) to low-loss regime (~5 dB/cm) is reported for a 220 nm x 500 nm Si(3)N(4) wire at 900 nm wavelength. This opens prospects to implement very low loss waveguides.

Surface transport and stable trapping of particles and cells by an optical waveguide loop.

Waveguide trapping has emerged as a useful technique for parallel and planar transport of particles and biological cells and can be integrated with lab-on-a-chip applications. However, particles trapped on waveguides are continuously propelled forward along the surface of the waveguide. This limits the practical usability of the waveguide trapping technique with other functions (e.g. analysis, imaging) that require particles to be stationary during diagnosis. In this paper, an optical waveguide loop with an intentional gap at the centre is proposed to hold propelled particles and cells. The waveguide acts as a conveyor belt to transport and deliver the particles/cells towards the gap. At the gap, the diverging light fields hold the particles at a fixed position. The proposed waveguide design is numerically studied and experimentally implemented. The optical forces on the particle at the gap are calculated using the finite element method. Experimentally, the method is used to transport and trap micro-particles and red blood cells at the gap with varying separations. The waveguides are only 180 nm thick and thus could be integrated with other functions on the chip, e.g. microfluidics or optical detection, to make an on-chip system for single cell analysis and to study the interaction between cells.

Mirrorless buried waveguide laser in monoclinic double tungstates fabricated by a novel combination of ion milling and liquid phase epitaxy.

Buried channel waveguides were fabricated by liquid phase epitaxial growth of a lattice-matched KY(0.58)Gd(0.22)Lu(0.17)Tm(0.03)(WO4)2 film on a microstructured KY(WO4)2 substrate. Channels were transferred to the substrates by standard photolithography and Ar-ion milling. The bottom and sidewalls of the milled channels were smooth enough (rms roughness = 70 nm and 20 nm, respectively) to favour the epitaxial growth of the active layer without defects at the boundary of substrate/epitaxial layer. The refractive index contrast was sufficient to enable light confinement and guided modes with low scattering losses were observed at wavelengths between 1440 nm and 1640 nm. CW laser operation at 1840 nm at room temperature was observed with feedback provided only by Fresnel reflection at the end faces, with slope efficiencies of 4% and 9% for TE and TM polarizations, respectively.