ABSTRACT
Oriented assemblies of functional nanoparticles, with the aid of external physical and chemical driving forces, have been prepared on two-dimensional solid substrates. It is challengeable, however, to achieve three-dimensional assembly directly in solution, owing to thermal fluctuations and free diffusion. Here we describe the self-orientation of gold nanorods at an immiscible liquid interface (that is, oleic acid-water) and exploit this novel phenomenon to create a substrate-free interfacial liquid-state surface-enhanced Raman spectroscopy. Dark-field imaging and Raman scattering results reveal that gold nanorods spontaneously adopt a vertical orientation at an oleic acid-water interface in a stable trapping mode, which is in good agreement with simulation results. The spontaneous vertical alignment of gold nanorods at the interface allows one to accomplish significant additional amplification of the Raman signal, which is up to three to four orders of magnitude higher than that from a solution of randomly oriented gold nanorods.
ABSTRACT
We investigated the imidization of a polyimide (PI) and the formation of Cu nanoparticles in a PI film by curinga precursor of PI (polyamic acid (PAA) dissolved in n-methyl-2-pyrrolidinone) in a reducing atmosphere in the rapid thermal annealing (RTA) system. A Cu film was deposited onto the SiO2/Si substrate, and the PAA was spin-coated onto the Cu film. After the PAA reacted with the Cu film, soft-baking was performed to evaporate the solvent. Finally, the PAA was imidized to PI at 450 degrees C by curing in a reducing atmosphere with the RTA. Fourier transform infrared spectroscopy showed that the PAA was successfully imidized by the RTA. X-ray diffraction patterns revealed that Cu nanoparticles formed by RTA curing at 450 degrees C for 5 minutes in a reducing atmosphere, and transmission electron microscopy showed that Cu nanoparticles about 6.5 nm in size were uniformly dispersed in the PI film. Curing by RTA is an attractive method because it takes only a few minutes.
ABSTRACT
The photoluminescence characteristic of the SnO(x)/Sn nanoparticles deposited on a solid supported liquid-crystalline phospholipid (1,2-dioleoyl-sn-glycero-3-phosphocholine) membrane was probed after plasma etching the nanoparticle monolayer. It was shown that the plasma etching of the nanoparticle surface greatly altered the particle morphology and enhanced the PL effect, especially when the particle size was below 10 nm in spite of strong presence of surrounding carbon. The enhancement mainly stemmed from the growth of a new PL peak due to the additional defect states produced on the nanoparticle surface by the plasma etching. It was also shown that hydrating the SnO(x)/Sn nanoparticles similarly improved the PL response of the nanoparticles as the hydration produced an additional oxygen-rich oxide layer on the particle surface.
Subject(s)
Lipid Bilayers/chemistry , Luminescence , Membrane Lipids/chemistry , Nanoparticles , Phosphatidylcholines/chemistry , Tin Compounds/chemistry , Tin/chemistry , Particle SizeABSTRACT
Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of -160 microVK(-1) for Bi2Te3 and +110 microVK(-1) for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.
