Effect of Ni Sulfate Residue on Oxygen Evolution Reaction (OER) in Porous NiFe@NiFe Layered Double Hydroxide.

The development of cost-effective and high-performance oxygen evolution reaction (OER) catalysts is a significant challenge. This study presents the synthesis of binder-free NiFe@NiFe layered double hydroxide (NNF) via one-pot electrodeposition on carbon paper and Ni foam at high current densities. The presence of Ni sulfate residues on the prepared NNF is also investigated. The findings indicate that Ni sulfate significantly improves OER performance and durability. The sulfate content can be controlled by varying the method and duration of washing. NNF prepared through dipping (NNF-D) exhibits outstanding OER activity with a low overpotential of 241 mV, which is 25 mV lower than that of NNF washed for 60 s (NNF-W-60 s) at 10 mA cm-2 in 1 m KOH. Furthermore, density functional theory analyses indicate that the Ni sulfate residue helps modify the electronic structure, thereby optimizing the binding strength of *OOH. This synthetic strategy is expected to inspire the development of next-generation catalysts utilizing various adsorbates.

Simple Synthesis and Characterization of Shell-Thickness-Controlled Ni/Ni3C Core-Shell Nanoparticles.

Ni/Ni3C core-shell nanoparticles with an average diameter of approximately 120 nm were carburized via a chemical solution method using triethylene glycol. It was found that over time, the nanoparticles were covered with a thin Ni3C shell measuring approximately 1-4 nm, and each Ni core was composed of poly grains. The saturation magnetization of the core-shell nanopowders decreased in proportion to the amount of Ni3C. The synthesis mechanism of the Ni/Ni3C core-shell nanoparticles was proposed through X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) analyses.

Transparent Electromagnetic Shielding Film Utilizing Imprinting-Based Micro Patterning Technology.

Utilization of methods involving component integration has accelerated, owing to the growth of the smart mobile industry. However, this integration leads to interference issues between the components, thereby elucidating the importance of the electromagnetic interference (EMI) shielding technology to solve such issues. EMI shielding technology has been previously implemented via the reflection or absorption of electromagnetic waves by using conductive materials. Nevertheless, to tackle the recent changes in the industry, a transparent and flexible EMI shielding technology is necessitated. In this study, a transparent and flexible EMI shielding material was fabricated by filling a conductive binder in a film comprising an intaglio pattern; this was achieved by using the ultraviolet (UV) imprinting technology to realize mass production. Subsequently, changes in the aperture ratio and shielding characteristics were analyzed according to the structure of the pattern. Based on this analysis, a square pattern was designed and a film with an intaglio pattern was developed through a UV imprinting process. Furthermore, it was confirmed that the transmittance, conductivity, and EMI shielding rate of the film were altered while changing the coating thickness of the conductive particles in the intaglio pattern. The final film prepared in this study exhibited characteristics that satisfied the required EMI shielding performance for electric and electronic applications, while achieving flexible structural stability and transparency.

Thermal Conductivity and Electromagnetic Interference (EMI) Absorbing Properties of Composite Sheets Composed of Dry Processed Core-Shell Structured Fillers and Silicone Polymers.

This paper proposes dual-functional sheets (DFSs) that simultaneously have high thermal conductivity (TC) and electromagnetic interference (EMI) absorbing properties, making them suitable for use in mobile electronics. By adopting a simple but highly efficient dry process for manufacturing core-shell structured fillers (CSSFs) and formulating a close-packed filler composition, the DFSs show high performance, TC of 5.1 W m-1 K-1, and a -4 dB inter-decoupling ratio (IDR) at a 1 GHz frequency. Especially, the DFSs show a high dielectric breakdown voltage (BDV) of 3 kV mm-1, which is beneficial for application in most electronic devices. The DFSs consist of two kinds of CSSFs that are blended in accordance with the close-packing rule, Horsfield's packing model, and with polydimethylsiloxane (PDMS) polymers. The core materials are soft magnetic Fe-12.5%Cr and Fe-6.5%Si alloy powders of different sizes, and Al2O3 ceramic powders of a 1-µm diameter are used as the shell material. The high performance of the DFS is supposed to originate from the thick and stable shell layer and the maximized filler loading capability owing to the close-packed structure.

Effect of Synthesis Time and Composition on Magnetic Properties of FeCo Nanoparticles by Polyol Method.

This study investigated the effect of synthesis time and composition on magnetic properties of FeCo nanoparticles. Fe75Co25, Fe66Co34, Fe52Co48 nanoparticles were synthesized by the polyol method. The saturation magnetization of Fe75 Co25, Fe66Co34, Fe52Co48 nanoparticles was 178 emu/g, 191 emu/g and 197 emu/g, respectively. The coercivity of Fe75 Co25, Fe66Co34, Fe52Co48 was 113 Oe, 131 Oe and 89.2 Oe respectively. The synthesis time of Fe52Co48 nanoparticles was also varied (2 h and 3 h) to determine the optimal synthesis time. The saturation magnetization of Fe52Co48 synthesized for 2 h, 3 h was 243 emu/g, 202 emu/g, respectively. The coercivity of Fe52Co48 synthesized for 2 h and 3 h was 46 Oe and 111 Oe, respectively. The highest saturation magnetization and lowest coercivity was obtained using a synthesis time of 2 h. Based on these results, it was confirmed that Fe52Co48 had the highest saturation magnetization and lowest coercivity among all of the compositions tested, and optimal synthesis time was 2 h.

The Properties of Cu Thin Films on Ru Depending on the ALD Temperature.

The copper thin films were deposited by Atomic layer deposition (ALD) on a ruthenium depending on the substrate temperatures. The substrate deposited Ru and TaN on SiO2 by plasma enhanced ALD (PEALD) before Cu deposition for an adhesion layer between Si and Cu. The copper thin films were deposited 200 cycles. The thickness of Cu was different depending on the substrate temperatures. The properties of copper thin films were investigated by a 4 point probe, SEM, and AFM. TaN and Ru layers were deposited by plasma enhanced ALD (PEALD) for the adhesion layer. Also, TaN and Ru layers were observed as TEM because the thickness was too thin. The thickness and roughness of Cu thin film increased depending on the deposition temperatures but, Cu thin film was not deposited at 110 °C. The best sheet resistance of the copper thin film was obtained at a deposition temperature of 170 °C.

Manufacture and Evaluation of Light Emitting Diode Package Substrate Using Flexible Printed Circuit Board.

Unlike other light sources such as fluorescent lamps and incandescent bulbs, light-emitting diodes (LED) convert 70-80% of energy into heat. If the heat produced an LED chip is not effectively released, its luminous efficiency and lifespan are reduced. Therefore, as a method effectively release heat, an LED PKG substrate containing a heat-releasing material with excellent thermal conductance was fabricated, and its thermal resistance and luminous efficiency were analyzed. In this experiment, a thin polyimide film with excellent ductility was used to fabricate the LED PKG substrate. A 35-µm-thick Cu foil with excellent thermal conductance was subjected to high temperature and pressure and attached to both sides of the polyimide film. By electroplating Ag or Au, which has excellent thermal conductance, for us as the electrode and heat-releasing material, LED PKG substrate was fabricated with a thickness of approximately 170 µm. (-40 °C --> RT --> 120 °C). The results revealed that the LED PKG substrate having a Ag electrode with excellent thermal conductance had an excellent thermal resistance of approximately 4.2 °C/W (Au electrode: 5.6 °C/W). The luminous flux after 100 cycles in the thermal shock test was reduced by approximately 0.09% (Au electrode: 2.77%), indicating that the LED PKG substrate had excellent thermal resistance without any mechanical and material defects in a rapid-temperature-changing environment. The advantages and excellent thermal resistance can be exploited in cellular phones and LCD panels, and heat-releasing problems in thin panels be solved.

Fabrication and Characteristics of High Capacitance Al Thin Films Capacitor Using a Polymer Inhibitor Bath in Electroless Plating Process.

An aluminum (Al) thin film capacitor was fabricated for a high capacitance capacitor using electrochemical etching, barrier-type anodizing, and electroless Ni-P plating. In this study, we focused on the bottom-up filling of Ni-P electrodes on Al2O3/Al with etched tunnels. The Al tunnel pits were irregularly distributed on the Al foil, diameters were in the range of about 0.5~1 µm, the depth of the tunnel pits was approximately 35~40 µm, and the complex structure was made full filled hard metal. To control the plating rate, the experiment was performed by adding polyethyleneimine (PEI, C2H5N), a high molecular substance. PEI forms a cross-link at the etching tunnel inlet, playing the role of delaying the inlet plating. When the PEI solution bath was used after activation, the Ni-P layer was deposited selectively on the bottoms of the tunnels. The characteristics were analyzed by adding the PEI addition quantity rate of 100~600 mg/L into the DI water. The capacitance of the Ni-P/Al2O3 (650~700 nm)/Al film was measured at 1 kHz using an impedance/gain phase analyzer. For the plane film without etch tunnels the capacitance was 12.5 nF/cm2 and for the etch film with Ni-P bottom-up filling the capacitance was 92 nF/cm2. These results illustrate a remarkable maximization of capacitance for thin film metal capacitors.

Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

The magnetic properties and microstructure of Co-Pt thin films using wet etching process.

Perpendicular magnetic recording (PMR) is a promising candidate for high density magnetic recording and has already been applied to hard disk drive (HDD) systems. However, media noise still limits the recording density. To reduce the media noise and achieve a high signal-to-noise ratio (SNR) in hard disk media, the grains of the magnetic layer must be magnetically isolated from each other. This study examined whether sputter-deposited Co-Pt thin films can have adjacent grains that are physically isolated. To accomplish this, the effects of the sputtering conditions and wet etching process on magnetic properties and the microstructure of the films were investigated. The film structure was Co-Pt (30 nm)/Ru (30 nm)/NiFe (10 nm)/Ta (5 nm). The composition of the Co-Pt thin films was Co-30.7 at.% Pt. The Co-Pt thin films were deposited in Ar gas at 5, 10, 12.5, and 15 mTorr. Wet etching process was performed using 7% nitric acid solution at room temperature. These films had high out-of-plane coercivity of up to 7032 Oe, which is twice that of the as-deposited film. These results suggest that wet etched Co-Pt thin films have weaker exchange coupling and enhanced out-of-plane coercivity, which would reduce the medium noise.

Silicon interposer BGA package with a Cu-filled through silicon via and a multilayer redistribution layer fabricated via electroplating.

As large-scale integrated circuit chips become smaller, conventional organic buildup substrates can no longer support them. To resolve this problem, silicon interposers with through silicon via (TSV) technology are gaining recognition as alternative solution to provide high-density interconnection, improved electrical performance due to shorter interconnection from the die to substrate for nano-scale devices. In this study, we fabricated a silicon interposer to achieve high density and high performance packages. Via holes were etched via the Bosch process using a deep reactive ion etcher and SiO2 formed with a diffusion furnace as the diffusion barrier of the Cu electrode. TSVs were filled with Cu under various electroplating conditions. After Cu filling, a Cu post was formed directly using the over-filled Cu electrode through a chemical mechanical polishing process. A double-layer redistribution layer was formed on one side of the interposer using a lift-off process. Sn-3.5% Ag solder bumps 40 µm in diameter were formed directly on the Cu post on another side of the interposer using electroplating and the reflow method.

Electroless nickel alloy deposition on SiO2 for application as a diffusion barrier and seed layer in 3D copper interconnect technology.

Electroless Ni-P films were investigated with the aim of application as barrier and seed layers in 3D interconnect technology. Different shapes of blind-via holes were fabricated with a deep reactive ion etcher and SiO2 formed on these holes as an insulating layer. The surface of the substrate has been made hydrophilic by O2 plasma treatment with 100 W of power for 20 min. Electroless Ni-P films were deposited as both a diffusion barrier and a seed layer for Cu filling process. Prior to plating, substrates were activated in a palladium chloride solution after sensitization in a tin chloride solution with various conditions in order to deposit uniform films in TSV. After the formation of the electroless barrier layer, electro Cu was plated directly on the barrier layer. Ni-P films fabricated in blind-via holes were observed by scanning electron microscope. Energy dispersive spectroscopy line scanning was carried out for evaluating the diffusion barrier properties of the Ni-P films. The electroless Ni-P layer worked well as a Cu diffusion barrier until 300 degrees C. However, Cu ions diffused into barrier layer when the annealing temperature increases over 400 degrees C.

Effect of thiourea on electrochemical nucleation and electrochemical impedance spectroscopy of electrodeposited tin on a copper substrate in a sulfate bath.

The effect of thiourea on the electrochemical nucleation of tin on a copper substrate from a sulfate bath was studied using voltammetry, chronoamperometry, electrochemical impedance spectroscopy, and scanning electron microscopy. Without thiourea, electrodeposition of tin showed very poor surface coverage. However, re-nucleation and growth of tin occurred after the addition of thiourea. In particular, very rapid re-nucleation and growth behavior of tin were observed when up to 6 g/L of thiourea was added. Furthermore, impedance analysis allowed the estimation of the change in the growth behavior of tin when up to 6 g/L of thiourea was added.

Corrosion resistance of ultrasonic electrodeposited Ni-Co-Fe ternary alloy films according to current density.

Ni-Co-Fe ternary alloy films were deposited on Copper clad laminate (CCL) by ultrasonic electroplating at different current densities from a sulfate bath. The corrosion properties of the ultrasonically-electrodeposited Ni-Co-Fe films were investigated by electrochemical impedance spectroscopy (EIS). We found that Ni, Co, and Fe component ratios changed according to the current density. The Ni content increased when the current density increased, but the Co and Fe content of the films decreased. Ni-Co-Fe ternary alloy films with a high Ni content and lower Fe content showed good resistance to corrosion. We also found that ultrasonically-electrodeposited Ni-Co-Fe films had higher corrosion resistance than non-ultrasonically electrodeposited Ni-Co-Fe films. Ultrasonically electrodeposited Ni-Co-Fe films had a higher Ni content than electrodeposited Ni-Co-Fe ternary alloys. X-ray diffraction analysis revealed that the Ni-Co-Fe films comprised a mixture of both FCC (face centered cubic) and BCC (body centered cubic) structures.

The fabrication of Co-Pt electro-deposited bit patterned media with nanoimprint lithography.

Bit patterned media with 25 nm hole diameter and 50 nm pitch size were fabricated with serial processes comprising master patterning with electron-beam lithography, a Si etching process, multi-layer soft stamp replication, and UV nanoimprinting, followed by Co-Pt magnetic material filling by electro-deposition. From these processes, the designed patterns were well defined, and perpendicular magnetic anisotropy of the fabricated bit patterned media was obtained.

A nodule-specific dicarboxylate transporter from alder is a member of the peptide transporter family.

Alder (Alnus glutinosa) and more than 200 angiosperms that encompass 24 genera are collectively called actinorhizal plants. These plants form a symbiotic relationship with the nitrogen-fixing actinomycete Frankia strain HFPArI3. The plants provide the bacteria with carbon sources in exchange for fixed nitrogen, but this metabolite exchange in actinorhizal nodules has not been well defined. We isolated an alder cDNA from a nodule cDNA library by differential screening with nodule versus root cDNA and found that it encoded a transporter of the PTR (peptide transporter) family, AgDCAT1. AgDCAT1 mRNA was detected only in the nodules and not in other plant organs. Immunolocalization analysis showed that AgDCAT1 protein is localized at the symbiotic interface. The AgDCAT1 substrate was determined by its heterologous expression in two systems. Xenopus laevis oocytes injected with AgDCAT1 cRNA showed an outward current when perfused with malate or succinate, and AgDCAT1 was able to complement a dicarboxylate uptake-deficient Escherichia coli mutant. Using the E. coli system, AgDCAT1 was shown to be a dicarboxylate transporter with a K(m) of 70 microm for malate. It also transported succinate, fumarate, and oxaloacetate. To our knowledge, AgDCAT1 is the first dicarboxylate transporter to be isolated from the nodules of symbiotic plants, and we suggest that it may supply the intracellular bacteria with dicarboxylates as carbon sources.