Diffusion-Dominated Luminescence Dynamics of CsPbBr3 Studied Using Cathodoluminescence and Microphotoluminescence Spectroscopy.

Time-resolved or time-correlation measurements using cathodoluminescence (CL) reveal the electronic and optical properties of semiconductors, such as their carrier lifetimes, at the nanoscale. However, halide perovskites, which are promising optoelectronic materials, exhibit significantly different decay dynamics in their CL and photoluminescence (PL). We conducted time-correlation CL measurements of CsPbBr3 using Hanbury Brown-Twiss interferometry and compared them with time-resolved PL. The measured CL decay time was on the order of subnanoseconds and was faster than PL decay at an excited carrier density of 2.1 × 1018 cm-3. Our experiment and analytical model revealed the CL dynamics induced by individual electron incidences, which are characterized by highly localized carrier generation followed by a rapid decrease in carrier density due to diffusion. This carrier diffusion can play a dominant role in the CL decay time for undoped semiconductors, in general, when the diffusion dynamics are faster than the carrier recombination.

Damage protection from focused ion beam process toward nanocavity-implemented compound semiconductor nanowire lasers.

A focused ion beam (FIB) can precisely mill samples and freely form any nanostructure even on surfaces with curvature, like a nanowire surface, which are difficult to implement by using conventional fabrication techniques, e.g. electron beam lithography. Thus, this tool is promising for nanofabrication; however, fabrication damage and contamination are critical issues, which deteriorate optical properties. In this work, we investigated the protective performance of Al2O3against the FIB process (especially by a gallium ion). Nanowires were coated with Al2O3as a hard mask to protect them from damage during FIB nanofabrication. To estimate the protective performance, their emission properties by photoluminescence measurement and time-resolved spectroscopy were compared with and without Al2O3coating conditions. From the results, we confirmed that the Al2O3coating protects the nanowires. In addition, the nanowires also showed lasing behavior even after FIB processing had been carried out to implement nanostructures. This indicates that their optical properties are well maintained. Thus, our study proves the usefulness of FIBs for future nanofabrication.

Mid-Infrared Lasing of Single Wurtzite InAs Nanowire.

Mid-infrared (MIR) photonics is a developing technology for sensing materials by their characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR region, Si photonic structures have been fabricated to guide and confine MIR light, and they allow us to achieve sensitive and integrated sensing devices. However, since the implementation of MIR light sources on Si is still challenging, we propose a thick indium arsenide (InAs) nanowire as an MIR laser that can couple to Si photonic structures with material manipulation. In this study, thick InAs nanowires are grown on an indium phosphide substrate with a self-catalyst vapor-liquid-solid method and transferred to gold-deposited SiO2/Si substrates. Low-temperature microphotoluminescence (PL) spectroscopy shows that InAs nanowires exhibit broad PL peaking at a wavelength of around 2.6 µm (3850 cm-1 in frequency), which corresponds to the bandgap energy of wurtzite InAs. At high optical pump fluences, single InAs nanowire exhibits sharp emission peaks, while their integrated intensity and polarization degree increase abruptly at the threshold pump fluence. These nonlinear behaviors indicate that the MIR lasing action takes place in the InAs nanowire in its cavity mode. Our demonstration of the MIR nanowire laser expands the wavelength coverage and potential application of semiconductor nanowires.

Simulation technique of quantum optical emission process from multiple two-level atoms based on classical numerical method.

In this paper, we report a numerical method for analyzing optical radiation from a two-level atom. The proposed method can consistently consider the optical emission and absorption process of an atom and also the interaction between atoms through their interaction with a radiation field. The numerical model is based on a damping oscillator description of a dipole current, which is a classical model of atomic transition and is implemented with a finite-difference time-domain method. Using the method, we successfully simulate the spontaneous emission phenomena in a vacuum, where the interaction between an atom and a radiated field plays an important role. We also simulate the radiation from an atom embedded in a photonic crystal (PhC) cavity. As a result, an atom-cavity field interaction is sucessfuly incorporated in the simulation, and the enhancement of the optical emission rate of an excited atom is explained. The method considers the effect of the interaction between atoms through the radiated field. We simulate the optical emission process of the multiple atoms and show that an enhancement of the emission rate can occur owing to an atom-atom interaction (superradiance) (R. H. Dicke, Phys. Rev. 93, 99 [1954]). We also show that the emission rate is suppressed by the effect of the destructive dipole-dipole interaction under an out-of-phase excitation condition (subradiance).

Highly Confined and Switchable Mid-Infrared Surface Phonon Polariton Resonances of Planar Circular Cavities with a Phase Change Material.

Mid-infrared (MIR) photonics demands highly confined optical fields to obtain efficient interaction between long-wavelength light and nanomaterials. Surface polaritons excited on polar semiconductor and metallic material interfaces exhibit near-fields localized on subwavelength scales. However, realizing a stronger field concentration in a cavity with a high quality ( Q) factor and a small mode volume is still challenging in the MIR region. This study reports MIR field concentration of surface phonon polaritons (SPhPs) using planar circular cavities with a high Q factor of ∼150. The cavities are fabricated on a thin film of the phase change material Ge3Sb2Te6 (GST) deposited on a silicon carbide (SiC) substrate. Scattering-type scanning near-field optical microscopy visualizes the near-field distribution on the samples and confirms directly that the SPhP field is strongly concentrated at the center of the centrosymmetric cavities. The smallest concentrated field size is 220 nm in diameter which corresponds to 1/50 of the wavelength of the incident light that is far below the diffraction limit. The thin GST film enhances the SPhP confinement, and it is used to switch the confinement off by tuning the cavity resonance induced by the phase change from the amorphous to the crystalline phase. This subwavelength and switchable field concentration within a high- Q polariton cavity has the potential to greatly enhance the light-matter interaction for molecular sensing and emission enhancement in MIR systems.

Room temperature continuous-wave nanolaser diode utilized by ultrahigh-Q few-cell photonic crystal nanocavities.

Few-cell point-defect photonic crystal (PhC) nanocavities (such as LX and H1 type cavities), have several unique characteristics including an ultra-small mode volume (Vm), a small device footprint advantageous for dense integration, and a large mode spacing advantageous for high spontaneous-emission coupling coefficient (ß), which are promising for energy-efficient densely-integratable on-chip laser light sources enhanced by the cavity QED effect. To achieve this goal, a high quality factor (Q) is essential, but conventional few-cell point-defect cavities do not have a sufficiently high Q. Here we adopt a series of modified designs of LX cavities with a buried heterostructure (BH) multi-quantum-well (MQW) active region that can achieve a high Q while maintaining their original advantages and fabricate current-injection laser devices. We have successfully observed continuous-wave (CW) lasing in InP-based L1, L2, L3 and L5 PhC nanocavities at 23°C with a DC current injection lower than 10 µA and a bias voltage lower than 0.9 V. The active volume is ultra-small while maintaining a sufficiently high confinement factor, which is as low as ~10-15 cm3 for a single-cell (L1) nanocavity. This is the first room-temperature current-injection CW lasing from any types of few-cell point-defect PhC nanocavities (LX or H1 types). Our report marks an important step towards realizing a nanolaser diode with a high cavity-QED effect, which is promising for use with on-chip densely integrated laser sources in photonic networks-on-chip combined with CMOS processors.

Optomechanical oscillator pumped and probed by optically two isolated photonic crystal cavity systems.

Optomechanical control of on-chip emitters is an important topic related to integrated all-optical circuits. However, there is neither a realization nor a suitable optomechanical structure for this control. The biggest obstacle is that the emission signal can hardly be distinguished from the pump light because of the several orders' power difference. In this study, we designed and experimentally verified an optomechanical oscillation system, in which a lumped mechanical oscillator connected two optically isolated pairs of coupled one-dimensional photonic crystal cavities. As a functional device, the two pairs of coupled cavities were respectively used as an optomechanical pump for the lumped oscillator (cavity pair II, wavelengths were designed to be within a 1.5 µm band) and a modulation target of the lumped oscillator (cavity pair I, wavelengths were designed to be within a 1.2 µm band). By conducting finite element method simulations, we found that the lumped-oscillator-supported configurations of both cavity pairs enhance the optomechanical interactions, especially for higher order optical modes, compared with their respective conventional side-clamped configurations. Besides the desired first-order in-plane antiphase mechanical mode, other mechanical modes of the lumped oscillator were investigated and found to possibly have optomechanical applications with a versatile degree of freedom. In experiments, the oscillator's RF spectra were probed using both cavity pairs I and II, and the results matched those of the simulations. Dynamic detuning of the optical spectrum of cavity pair I was then implemented with a pumped lumped oscillator. This was the first demonstration of an optomechanical lumped oscillator connecting two optically isolated pairs of coupled cavities, whose biggest advantage is that one cavity pair can be modulated with an lumped oscillator without interference from the pump light in the other cavity pair. Thus, the oscillator is a suitable platform for optomechanical control of integrated lasers, cavity quantum electrodynamics, and spontaneous emission. Furthermore, this device may open the door on the study of interactions between photons, phonons, and excitons in the quantum regime.

Nanowire-nanoantenna coupled system fabricated by nanomanipulation.

Here we demonstrate the combination of a semiconductor nanowire and a plasmonic bowtie nanoantenna. A subwavelength InP nanowire was placed precisely in the middle of the nanogap of a gold bowtie nanoantenna with a nanomanipulator installed in a focused ion beam system. We observed a significantly large enhancement (by a factor of 110) of the photoluminescence intensity from this coupled system when the excitation wavelength was at the plasmonic resonance with its polarization parallel to the nanoantenna. Moreover, simulation results revealed that this large enhancement was caused by an interesting interplay between the plasmonic resonance of the nanoantenna and the breakdown of the field suppression effect in the subwavelength nanowire. Our results show that the combination of a nanowire and a nanoantenna gives us a new degree of freedom to design light-matter interactions on a nanoscale.

Systematic study of thresholdless oscillation in high-ß buried multiple-quantum-well photonic crystal nanocavity lasers.

Buried multiple-quantum-well (MQW) 2D photonic crystal cavities (PhC) achieve low non-radiative recombination and high carrier confinement thus making them highly efficient emitters. In this study, we have investigated the lasing characteristics of high-ß(spontaneous emission coupling factor) buried MQW photonic crystal nanocavity lasers to clarify the theoretically-predicted thresholdless operation in high-ß nanolasers. The strong light and carrier confinement and low non-radiative recombination in our nanolasers have enabled us to clearly demonstrate very smooth lasing transition in terms of the light-in vs light-out curve and cavity linewidth. To clarify the thresholdless lasing behavior, we carried out a lifetime measurement and a photon correlation measurement, which also confirmed the predicted behavior. In addition, we systematically investigated the dependence of ß on the detuning frequency, which was in good agreement with a numerical simulation based on the finite-difference time-domain method. This is the first convincing systematic study of nanolasers based on an MQW close to the thresholdless regime.

Enhanced electron-hole droplet emission from surface-oxidized silicon photonic crystal nanocavities.

We have observed electron-hole droplet (EHD) emission enhanced by silicon photonic crystal (Si PhC) nanocavities with a surface oxide. The EHD is employed as a massive emitter that remains inside the nanocavity to achieve efficient cavity-emitter coupling. Time-resolved emission measurements demonstrate that the surface oxide greatly reduces the nonradiative annihilation of the EHDs and maintains them in the PhC nanocavities. It is found that the surface-oxidized Si PhC nanocavity enhances EHD emission in addition to the Purcell enhancement of the resonant cavity, which will contribute to works on Si light emission and the cavity quantum electrodynamics of electron-hole condensates.

Ultrafast spontaneous emission of copper-doped silicon enhanced by an optical nanocavity.

Dopants in silicon (Si) have attracted attention in the fields of photonics and quantum optics. However, the optical characteristics are limited by the small spontaneous emission rate of dopants in Si. This study demonstrates a large increase in the spontaneous emission rate of copper isoelectronic centres (Cu-IECs) doped into Si photonic crystal nanocavities. In a cavity with a quality factor (Q) of ~16,000, the photoluminescence (PL) lifetime of the Cu-IECs is 1.1 ns, which is 30 times shorter than the lifetime of a sample without a cavity. The PL decay rate is increased in proportion to Q/Vc (Vc is the cavity mode volume), which indicates the Purcell effect. This is the first demonstration of a cavity-enhanced ultrafast spontaneous emission from dopants in Si, and it may lead to the development of fast and efficient Si light emitters and Si quantum optical devices based on dopants with efficient optical access.

Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling.

High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres.

Finite-difference time-domain analysis of photonic crystal slab cavities with two-level systems.

In this paper, we report the numerical simulation of an atom-cavity interaction within photonic crystal nano-cavities. The numerical model is based on a damping oscillator description of a dipole current and it is implemented with a finite-difference time-domain method. Using the method, we successfully simulate the atom-cavity mode field interactions of a two-level system embedded in a photonic crystal cavity under several coupling strength conditions. We show that enhancement and suppression of optical emission rate from a two-level system are also shown by this model.

All-optical memory based on injection-locking bistability in photonic crystal lasers.

We have demonstrated an all-optical memory by using InGaAsP/InP buried heterostructure photonic crystal (BH-PhC) lasers. We achieved distinct optical injection locking bistability in an ultra-compact active region (4 × 0.3 × 0.16 µm3) with only 25 µW pump power in the PhC waveguide, which is two orders less than previously reported optical memories based on other bistable semiconductor lasers. Dynamic memory operations were achieved with pump power of 100 µW and switching power of 22 µW and 71 µW in the PhC waveguide. Fast switching times of about 60 ps were achieved. To the authors' best knowledge, this is the first demonstration of PhC laser-based all-optical memory.

Bound exciton photoluminescence from ion­implanted phosphorus in thin silicon layers.

We report the observation of clear bound exciton (BE) emission from ion-implanted phosphorus. Shallow implantation and high-temperature annealing successfully introduce active donors into thin silicon layers. The BE emission at a wavelength of 1079 nm shows that a part of the implanted donors are definitely activated and isolated from each other. However, photoluminescence and electron spin resonance studies find a cluster state of the activated donors. The BE emission is suppressed by this cluster state rather than the nonradiative processes caused by ion implantation. Our results provide important information about ion implantation for doping quantum devices with phosphorus quantum bits.