ABSTRACT
We investigate the subsurface composition of turbid materials at the micro scale by means of a portable non-invasive technique, micro-spatially offset Raman spectroscopy (micro-SORS), combined with shifted excitation Raman difference spectroscopy (SERDS). This combination enables the microscale layer analysis and allows to deal effectively with highly fluorescing samples as well as ambient light, all in a form of an in-house portable prototype device optimised for applications in heritage science. The instrument comprises ability to simultaneously collect multiple spectra by means of an optical fibre bundle, thus reducing the dead time and simplifying the ease of deployment of the technique. The performance of the synergy between micro-SORS and 785 nm SERDS dual-wavelength diode laser is demonstrated on a stratified mock-up painting samples including highly fluorescing painted layers. This instrumental approach could be ground-breaking in heritage science, due to the largely unmet need of analysing the molecular composition of subsurface of artworks non-invasively and in situ, and in the presence of fluorescent background and ambient light. Moreover, many other fields are expected to benefit from this technological advancement such as solar energy, forensic and food analytical areas.
ABSTRACT
Lasing emission at multiple wavelengths can be used in different sensing applications and in optical telecommunication. In this work, we report a six-wavelength distributed Bragg reflector (DBR) laser, emitting around 976 nm with six ridge waveguide (RW) structures, where individual DBR gratings are combined into a common front section. These six elements are individually addressable and biased one at a time for individual wavelength selection. The drawback of this RW combination is observable in spatial characteristics where higher-order modes are supported. We addressed this issue by using a master oscillator power amplifier (MOPA) system that combines the six-wavelength MO laser with a tapered PA. Through this configuration, the PA acts as a spatial filter of the MO beam, providing a nearly diffraction-limited beam with M1/e22<1.5. In addition, the described MOPA system provides output powers around 4 W with spectral single-mode operation, with up to 9.36 nm of thermal wavelength tuning. We believe that the described MOPA configuration can be used in different applications, such as absorption spectroscopy.
ABSTRACT
Tunable high-power diode lasers are key components in various established and emerging applications. In this work, we present a compact hybrid master oscillator power amplifier (MOPA) laser system. The system utilizes a tunable GaAs-based sampled-grating (SG) distributed Bragg reflector (DBR) laser as the master oscillator (MO), which emits around a wavelength of 970 nm in a single longitudinal mode with a spectral width below 20 pm. The SG-DBR laser consists of two SGs, each of which can be thermally tuned with microheaters. By tuning one of the two SGs, a discrete wavelength tuning of 21.1 nm can be obtained with a Vernier mode spacing of about 2.3 nm. By tuning both SGs, 23.5 nm of quasi-continuous tuning is obtained, with a mode spacing of about 115 pm. The coupling of the beam emitted by the MO into a tapered power amplifier provides an amplified output power in the watt range having a nearly diffraction-limited beam with a propagation factor of M1/e22=1.6. The combination of high power and wide wavelength tuning in a compact system makes this light source ideal for, among other things, nonlinear frequency conversion.
ABSTRACT
Within the field of high-power second harmonic generation (SHG), power scaling is often hindered by adverse crystal effects such as thermal dephasing arising from the second harmonic (SH) light, which imposes limits on the power that can be generated in many crystals. Here we demonstrate a concept for efficient power scaling of single-pass SHG beyond such limits using a cascade of nonlinear crystals, in which the first crystal is chosen for high nonlinear efficiency and the subsequent crystal(s) are chosen for power handling ability. Using this highly efficient single-pass concept, we generate 3.7 W of continuous-wave diffraction-limited (M(2)=1.25) light at 532 nm from 9.5 W of non-diffraction-limited (M(2)=7.7) light from a tapered laser diode, while avoiding significant thermal effects. Besides constituting the highest SH power yet achieved using a laser diode, this demonstrates that the concept successfully combines the high efficiency of the first stage with the good power handling properties of the subsequent stages. The concept is generally applicable and can be expanded with more stages to obtain even higher efficiency, and extends also to other combinations of nonlinear media suitable for other wavelengths.
ABSTRACT
We demonstrate a compact system for single-pass frequency doubling of high-power GaN diode laser radiation. The deep UV laser light at 222.5 nm is generated in a ß-BaB2O4 (BBO) crystal. A high-power GaN external cavity diode laser (ECDL) system in Littrow configuration with narrowband emission at 445 nm is used as pump source. At a pump power of 680 mW, a maximum UV power of 16 µW in continuous-wave operation at 222.5 nm is achieved. This concept enables a compact diode laser-based system emitting in the deep ultraviolet spectral range.
ABSTRACT
A high-power external cavity diode laser (ECDL) system with narrowband emission is presented. The system is based on a commercially available high-power GaN laser diode. For the ECDL, a maximum optical output power of 400 mW in continuous-wave operation with narrowband emission is achieved. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. A spectral width of 20 pm at 445 nm with a side-mode suppression ratio larger than 40 dB is achieved. This concept enables diode laser systems suitable for subsequent nonlinear frequency conversion into the UV spectral range.
ABSTRACT
A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659to675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M(2) is 2.0 with the output power of 1.27 W.
ABSTRACT
To complete our study concerning lineshift in the rovibrational spectrum of (14)N(16)O(2), a pulse-driven three-channel lead salt diode laser spectrometer was applied to record high-resolution spectra at room temperature in the 6.2-µm region corresponding to the nu(3) band at low NO(2) concentrations. The shift was studied for collisions with the noble gases He, Ne, Ar, Kr, and Xe. This paper extends our recently published data in order to analyze the quantum number dependence of the shift effect more precisely. Therefore, in this paper, additionally eight unresolved NO(2) doublets covering an enlarged quantum number range (10
ABSTRACT
A high-resolution three-channel diode-laser spectrometer was used to record a large number of spectra with (14)N(16)O(2) and foreign gas pressures ranging from 0.1 to 0.4 and 20 to 150 Torr, respectively, at room temperature. The 6.2-µm region corresponding to the nu(3) band of NO(2) was analyzed and the broadening and shift coefficients were derived in the case of collisions between NO(2) and H(2), D(2), O(2), N(2), CO(2), and SO(2) for 13 lines with 18
ABSTRACT
Line shift coefficients for five lines of five different isotopomers in the fundamental band of CO in the spectral region near 2058 cm-1 were measured using a three channel lead salt diode laser spectrometer. The study includes the lines P(3) of 13C17O, R(3) of 13C18O, P(9) of 12C18O, P(10) of 13C16O, and P(21) of 12C16O, and covers collisions with N2, O2, H2, D2, He, Ne, Ar, Kr, and Xe. Line shifts of the isotopomers 13C16O, 12C18O, 13C18O, and 13C17O were determined for the first time. Within the experimental uncertainty no significant dependence of the shift effect on the isotopomer was found. The R-branch line under study shows a smaller line shift coefficient than a P-branch line with a similar rotational quantum number. With increasing mass of the noble gas perturber the absolute size of the shift coefficient increases. Moreover self- and nitrogen-broadening coefficients for the isotopomer lines were determined. Compared to previous measurements no significant deviations between different isotopomers were observed. Copyright 1998 Academic Press.
ABSTRACT
High-resolution diode laser spectroscopy was applied to measure broadening coefficients in the 9.8-µm nu14 band of benzene, C6H6. Self-broadening was investigated at 295 and 344 K for 73 lines between 1017.31 and 1045.85 cm-1 with 9
ABSTRACT
With an infrared diode laser spectrometer in pulse mode we studied the N2 broadening of H2S absorption lines in the nu1, nu2, and nu3 bands. Altogether 22 lines were investigated: 16 lines from the R branch of the nu1 band (3
ABSTRACT
Line intensities for 109 lines in the nu1 + nu3 band of 32SO2, 4 lines in the nu1 + nu3 band of 34SO2, and 7 lines in the nu1 + nu2 + nu3 - nu2 band of 32SO2 were determined in the spectral region between 2464 cm-1 and 2503 cm-1 by applying a high resolution tunable diode laser spectrometer. The transitions from the nu1 + nu3 band of 32SO2 cover the quantum number ranges 2
