Emergent charge order in pressurized kagome superconductor CsV3Sb5.

The discovery of several electronic orders in kagome superconductors AV3Sb5 (A means K, Rb, Cs) provides a promising platform for exploring unprecedented emergent physics1-9. Under moderate pressure (<2.2 GPa), the triple-Q charge density wave (CDW) order is monotonically suppressed by pressure, while the superconductivity shows a two-dome-like behaviour, suggesting an unusual interplay between superconductivity and CDW order10,11. Given that time-reversal symmetry breaking and electronic nematicity have been revealed inside the triple-Q CDW phase8,9,12,13, understanding this CDW order and its interplay with superconductivity becomes one of the core questions in AV3Sb5 (refs. 3,5,6). Here, we report the evolution of CDW and superconductivity with pressure in CsV3Sb5 by 51V nuclear magnetic resonance measurements. An emergent CDW phase, ascribed to a possible stripe-like CDW order with a unidirectional 4a0 modulation, is observed between Pc1 ≅ 0.58 GPa and Pc2 ≅ 2.0 GPa, which explains the two-dome-like superconducting behaviour under pressure. Furthermore, the nuclear spin-lattice relaxation measurement reveals evidence for pressure-independent charge fluctuations above the CDW transition temperature and unconventional superconducting pairing above Pc2. Our results not only shed new light on the interplay of superconductivity and CDW, but also reveal new electronic correlation effects in kagome superconductors AV3Sb5.

Charge-density-wave-driven electronic nematicity in a kagome superconductor.

Electronic nematicity, in which rotational symmetry is spontaneously broken by electronic degrees of freedom, has been demonstrated as a ubiquitous phenomenon in correlated quantum fluids including high-temperature superconductors and quantum Hall systems1,2. Notably, the electronic nematicity in high-temperature superconductors exhibits an intriguing entanglement with superconductivity, generating complicated superconducting pairing and intertwined electronic orders. Recently, an unusual competition between superconductivity and a charge-density-wave (CDW) order has been found in the AV3Sb5 (A = K, Rb, Cs) family with two-dimensional vanadium kagome nets3-8. Whether these phenomena involve electronic nematicity is still unknown. Here we report evidence for the existence of electronic nematicity in CsV3Sb5, using a combination of elastoresistance measurements, nuclear magnetic resonance (NMR) and scanning tunnelling microscopy/spectroscopy (STM/S). The temperature-dependent elastoresistance coefficient (m11 minus m12) and NMR spectra demonstrate that, besides a C2 structural distortion of the 2a0 × 2a0 supercell owing to out-of-plane modulation, considerable nematic fluctuations emerge immediately below the CDW transition (approximately 94 kelvin) and finally a nematic transition occurs below about 35 kelvin. The STM experiment directly visualizes the C2-structure-pinned long-range nematic order below the nematic transition temperature, suggesting a novel nematicity described by a three-state Potts model. Our findings indicate an intrinsic electronic nematicity in the normal state of CsV3Sb5, which sets a new paradigm for revealing the role of electronic nematicity on pairing mechanism in unconventional superconductors.

PbI2-MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment.

van der Waals (vdW) epitaxy offers a promising strategy without lattice and processing constraints to prepare atomically clean and electronically sharp interfaces for fundamental studies and electronic device demonstrations. Herein, PbI2 was thermally deposited at high-vacuum conditions onto CVD-grown monolayer MoS2 flakes in a vdW epitaxial manner to form 3D-2D heterojunctions, which are promising for vdW epitaxial growth of perovskite films. X-ray diffraction, X-ray photoemission spectroscopy, Raman, and atomic force microscopy measurements reveal the structural properties of the high-quality heterojunctions. Photoluminescence (PL) measurements reveal that the PL emissions from the bottom MoS2 flakes are greatly quenched compared to their as-grown counterparts, which can be ascribed to the band alignment-induced distinct interfacial charge-transfer behaviors. Strong interlayer excitons can be detected at the PbI2/MoS2 interface, indicating an effective type II band alignment, which can be further confirmed by ultraviolet photoemission spectroscopy measurements. The results provide a new material platform for the application of the vdW heterojunctions in electronic and optoelectronic devices.

A homogeneous p-n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices.

The realization of p-n homojunctions, which can be achieved via spatially controlled carrier-type modulation, remains a challenge for two-dimensional transition metal dichalcogenides. Here, we report an effective method to tune intrinsic n-type few-layer MoSe2 to p-type through controlling precisely the ultraviolet-ozone treatment time, which can be attributed to the surface charge transfer from the underlying MoSe2 to MoOx (x < 3). The resulting hole mobility and concentration are ∼20.1 cm2 V-1 s-1 and ∼1.9 × 1012 cm-2, respectively, and the on-off ratio is ∼105, which are comparable to the values of pristine n-type MoSe2. Moreover, the lateral p-n homojunction prepared by partially treating MoSe2 displays a high rectification ratio of 2.4 × 104, an ideality factor of 1.1, and a high photoresponsivity of 0.23 A W-1 to the 633 nm laser at Vd = 0 V and Vg = 0 V due to the built-in potential in the p-n homojunction area. Our findings ensure the MoSe2 p-n diode as a promising candidate for future low-power operating photodevices.