ABSTRACT
Large-sized single-crystal two-dimensional (2D) perovskites are highly desirable owing to their fundamental properties and intriguing ability to boost devices. Herein, 2-phenylethylammonium lead bromide [(PEA)2PbBr4] single crystals, which are a violet-light-emitting 2D perovskite material, with typical lateral sizes of about one centimeter were successfully grown using a seeded solution method. The single-crystal plates showed a well-defined shape (rectangle or hexagon), a natural thickness (300-500 µm) similar to that of conventional silicon and InP wafers, a large aspect ratio of â¼20, and a smooth surface (root mean square, â¼0.7 nm). We integrated these single crystal plates into an ultraviolet photodetector, achieving a low dark current of â¼10-13 A and an efficient photoresponse (on/off ratio, â¼103). This experiment could easily be extended to grow freestanding 2D perovskite single crystals on a wafer scale for practical integrated optoelectronics.
ABSTRACT
We adopt an acetone vapour-assisted method to grow high quality single-crystalline microplates of two-dimensional (2D) perovskite, 2-phenylethylammonium lead bromide [(C6H5C2H4NH3)2PbBr4]. The microplates, converted from the spin-coated films, are well-defined rectangles. Temperature dependent photoluminescence (PL) spectroscopy shows that the band gap PL is enhanced markedly with increasing temperature up to 218 K, accompanied by the quenching of the PL related to the trap states, which perhaps results from the exciton-phonon couplings. The optical phonon energy around 50 meV and the exciton binding energy around 120 meV are derived by fitting the band gap PL linewidths and intensities at different temperatures, respectively.
ABSTRACT
Very recently, the NH2CH = NH2PbI3 (FAPbI3) perovskite material has attracted considerable attention in fabricating solar cells (SCs). For a photovoltaic material, its refractive index and extinction coefficient, n(λ) and k(λ), as functions of λ, are important to study its optical properties and to estimate the power conversion efficiency potential for the SCs made of it. As far as we know, to date there has been no reports of n(λ) and k(λ) for FAPbI3 material. In this article, with spectroscopic ellipsometry (SE) measurements, the n(λ) and k(λ), as well as E g = 1.45 eV for FAPbI3, are acquired. The fast deposition crystallization (FDC) procedure combined with the slowed down annealing (SDA) process is applied to fabricate smooth and uniform FAPbI3 film on quartz substrate. Several kinds of organic solvents were tried as the second solvent in the FDC procedure, and it is found that when petroleum ether is used, the smallest surface roughness and good FAPbI3 material purity of the FAPbI3 film can be acquired. The k(λ) results for FAPbI3 obtained by SE, calculated from the n(λ) using the Kramers-Kronig relationship, by absorbance, and by first-principles calculations, are compared. The n(λ) and k(λ) for FAPbI3 are also compared with those for CH3NH3PbI3, GaAs and c-Si.
