High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness.

The effect of thickness of Ga doped ZnO (GZO) layer on the performance of GZO/p-Si heterojunctions fabricated by reactive co-sputtering of Zn-GaAs target is investigated. GZO films were deposited at 375 °C with 0.5% GaAs area coverage of Zn target and 5% O2 in sputtering atmosphere. X-ray diffraction and X-ray photoelectron spectroscopy show that c-axis orientation of crystallites, Ga/Zn ratio and oxygen related defects depend substantially on the thickness of films. The 200-350 nm thick GZO films display low carrier concentration ∼1017 cm-3, which increases to >1020 cm-3 for thicker films. The diodes fabricated with >500 nm thick GZO layers display non-rectifying behaviour, while those fabricated with 200-350 nm thick GZO layers display nearly ideal rectification with diode factors of 1.5-2.5, along with, turn-on voltage ∼1 V, reverse saturation current ∼10-5 A, barrier height ∼0.4 eV and series resistance ∼200 Ω. The drastically improved diode performance is attributed to small Ga/Zn ratio (∼0.01) and extremely low dopant activation (∼0.3%), owing to diffusion and non-substitutional incorporation of Ga in thin GZO layers, which cause self-adjustment of doping concentration. These factors, together with c-axis orientation and chemisorbed oxygen at grain boundaries, facilitate ideal diode characteristics, not reported earlier for GZO/p-Si heterojunctions.

Influence of noncovalent modification on dispersion state of multiwalled carbon nanotubes in melt-mixed immiscible polymer blends.

Multiwalled carbon nanotubes (MWNTs) were melt-mixed with polyamide6 (PA6) and acrylonitrile butadiene styrene copolymer (ABS) to obtain electrically conducting composites. MWNTs were noncovalently modified with sodium salt of 6-aminocaproic acid (MWNTs-m1) and 3-pyrenealdehyde (MWNTs-m2) to 'deagglomerate' MWNTs. Raman spectroscopic analysis indicated a G-band shift from ∼1581.9 cm(-1) for pristine MWNTs to ∼1590.2 cm(-1) for MWNTs-m1 and ∼1588.8 cm(-1) for MWNTs-m2, indicating the interaction between MWNTs and the respective modifier molecules. Blends showed 'co-continuous' morphology on the addition of MWNTs. TEM observations showed that a higher population of pristine MWNTs exhibited a 'nanoagglomerated' state in PA6 and ABS phases in the case of a 40/60 PA6/ABS blend, unlike a 60/40 blend, which depicted a higher population of 'individualized' MWNTs. Further, the corresponding blends with MWNTs-m1 and MWNTs-m2 showed 'nanoagglomerated' and 'individualized' MWNTs. Blends with pristine MWNTs showed an increase in DC electrical conductivity with an increase in PA6 concentration in the blend. Moreover, the corresponding blends with MWNTs-m1 and MWNTs-m2 exhibited an increased DC electrical conductivity value as compared to the corresponding blend with pristine MWNTs. Ratio of the intensity (H1/H2) of the crystallization peak at lower temperature (H1) to the intensity of the crystallization peak at higher temperature (H2) depicted lower values for blends with pristine MWNTs as compared to the corresponding blends with MWNTs-m1 and MWNTs-m2. TGA studies indicated the formation of a thicker 'interphase' involving MWNTs and the interacting polymer chains.

Near room temperature reduction of graphene oxide Langmuir-Blodgett monolayers by hydrogen plasma.

Langmuir-Blodgett monolayer sheets of graphene oxide (GO) were transferred onto Si and SiO2/Si, and subjected to hydrogen plasma treatment near room temperature. GO monolayers were morphologically stable at low power (15 W) plasma treatment, for durations up to 2 min and temperatures up to 120 °C. GO monolayers reduced under optimized plasma treatment conditions (30 s duration at 50 °C) exhibit a sheet thickness of (0.5-0.6) nm, high sp(2)-C content (75%), a low O/C ratio (0.16) and a significant red-shift of Raman G-mode to 1588 cm(-1), indicating efficient de-oxygenation and a substantial decrease of defects. A study of the valence band electronic structure of hydrogen plasma reduced GO monolayers shows an increase of DOS in the vicinity of the Fermi level, due to the increase of C 2p-π states, and a substantial decrease of work function. These results, along with conductivity measurements and transfer characteristics, reveal the p-type nature of hydrogen plasma reduced GO monolayers, displaying a conductivity of (0.2-31) S cm(-1) and a field effect mobility of (0.1-6) cm(2) V(-1) s(-1). Plasma treatment at higher temperatures results in a substantial increase in sp(3)-C/damaged alternant hydrocarbon content and incorporation of defects related to the hydrogenation of the graphitic network, as evidenced by multiple Raman features, including a large red-shift of D-mode to 1331 cm(-1) and a high I(D)/I(G) ratio, and supported by the appearance of mid-gap states in the vicinity of the Fermi level.

Study of simultaneous reduction and nitrogen doping of graphene oxide Langmuir-Blodgett monolayer sheets by ammonia plasma treatment.

Graphene oxide (GO) monolayer sheets, transferred onto Si by the Langmuir-Blodgett technique, were subjected to ammonia plasma treatment at room temperature with the objective of simultaneous reduction and doping. Scanning electron microscopy and atomic force microscopy studies show that plasma treatment at a relatively low power (∼10 W) for up to 15 min does not affect the morphological stability and monolayer character of GO sheets. X-ray photoelectron spectroscopy has been used to study de-oxygenation of GO monolayers and the incorporation of nitrogen in graphitic-N, pyrrolic-N and pyridinic-N forms due to the plasma treatment. The corresponding changes in the valence band electronic structure, density of states at the Fermi level and work function have been investigated by ultraviolet photoelectron spectroscopy. These studies, supported by Raman spectroscopy and electrical conductivity measurements, have shown that a short duration plasma treatment of up to 5 min results in an increase of sp²-C content along with a substantial incorporation of the graphitic-N form, leading to the formation of n-type reduced GO. Prolonged plasma treatment for longer durations results in a decrease of electrical conductivity, which is accompanied by a substantial decrease of sp²-C and an increase in defects and disorder, primarily attributed to the increase in pyridinic-N content.

Growth of CdS nanocrystallites on graphene oxide Langmuir-Blodgett monolayers.

Large area GO-Cd composite Langmuir-Blodgett monolayers were transferred onto Si substrate by introducing Cd(2+) ions into the subphase. The changes in the behaviour of the Langmuir monolayer isotherm in the presence of Cd(2+) ions are attributed to changes in the microstructure and density of the GO sheets on the subphase surface. The uptake of Cd onto the GO monolayers and the effect of subsequent sulphidation were investigated by AFM, FTIR, Raman, XPS and HRTEM techniques. The incorporation of Cd into the GO monolayers causes some overlapping of sheets and extensive formation of wrinkles. Sulphidation of the GO-Cd sheets results in the formation of uniformly distributed CdS nanocrystallites on the entire basal plane of the GO monolayers. The de-bonding of Cd with oxygen functional groups results in a reduction of the wrinkles. The GO sheets function primarily as a platform for the interaction of metal ions with oxygen functionalities and their structure and characteristic features are not affected by either uptake of Cd or formation of CdS.

Growth of highly oriented crystalline polyaniline films by self-organization.

Silicon substrates with (100) orientation were modified with amino-silane self-assembled monolayer (SAM) to provide amino (NH(2)) moieties at the substrate surface. Self-organization of polyaniline during chemical polymerization, on this modified surface, leads to the growth of highly oriented films at the substrate-polymer interface. The morphology studied using scanning electron microscopy and atomic force microscopy revealed the formation of polymer film with well faceted pyramidal crystallites. XPS and FTIR spectroscopy were used to analyze the chemical structure of the film. X-ray diffraction measurements show the crystalline nature of the polyaniline, whose lattice parameters are in agreement with the reported values. This study underlines the importance of a SAM in deciding the structure and morphology of the deposited polymer.