ABSTRACT
The application of the unique properties of terahertz radiation is increasingly needed in sensors, especially in those operating at room temperature without an external bias voltage. Bow-tie microwave diodes on the base of InGaAs semiconductor structures meet these requirements. These diodes operate on the basis of free-carrier heating in microwave electric fields, which allows for the use of such sensors in millimeter- and submillimeter-wavelength ranges. However, there still exists some uncertainty concerning the origin of the voltage detected across these diodes. This work provides a more detailed analysis of the detection mechanisms in InAlAs/InGaAs selectively doped bow-tie-shaped semiconductor structures. The influence of the InAs inserts in the InGaAs layer is investigated under various illumination and temperature conditions. A study of the voltage-power characteristics, the voltage sensitivity dependence on frequency in the Ka range, temperature dependence of the detected voltage and its relaxation characteristics lead to the conclusion that a photo-gradient electromotive force arises in bow-tie diodes under simultaneous light illumination and microwave radiation.
ABSTRACT
The high efficiency of perovskite solar cells strongly depends on the quality of perovskite films and carrier extraction layers. Here, we present the results of an investigation of the photoelectric properties of solar cells based on perovskite films grown on compact and mesoporous titanium dioxide layers. Kinetics of charge carrier transport and their extraction in triple-cation perovskite solar cells were studied by using transient photovoltage and time-resolved photoluminescence decay measurements. X-ray diffraction analysis revealed that the crystallinity of the perovskite films grown on mesoporous titanium dioxide is better compared to the films grown on compact TiO2. Mesoporous structured perovskite solar cells are found to have higher power conversion efficiency mainly due to enlarged perovskite/mesoporous -TiO2 interfacial area and better crystallinity of their perovskite films.
ABSTRACT
Hot carriers are a critical issue in modern photovoltaics and miniaturized electronics. We present a study of hot electron energy relaxation in different two-dimensional electron gas (2DEG) structures and compare the measured values with regard to the dimensionality of the semiconductor formations. Asymmetrically necked structures containing different types of AlGaAs/GaAs single quantum wells, GaAs/InGaAs layers, or bulk highly and lowly doped GaAs formations were investigated. The research was performed in the dark and under white light illumination at room temperature. Electron energy relaxation time was estimated using two models of I-V characteristics analysis applied to a structure with n-n+ junction and a model of voltage sensitivity dependence on microwave frequency. The best results were obtained using the latter model, showing that the electron energy relaxation time in a single quantum well structure (2DEG structure) is twice as long as that in the bulk semiconductor.
ABSTRACT
Performance of a perovskite solar cell is largely influenced by the optoelectronic properties of metal halide perovskite films. Here we study the influence of cesium concentration on morphology, crystal structure, photoluminescence and optical properties of the triple cation perovskite film. Incorporation of small amount (x = 0.1) of cesium cations into Csx(MA0.17FA0.83)1−x Pb(I0.83Br0.17)3 leads to enhanced power conversion efficiency (PCE) of the solar cell resulting mainly from significant rise of the short-current density and the fill factor value. Further increase of Cs concentration (x > 0.1) decreases the film's phase purity, carrier lifetime and correspondingly reduces PCE of the solar cell. Higher concentration of Cs (x ≥ 0.2) causes phase segregation of the perovskite alongside with formation of Cs-rich regions impeding light absorption.
ABSTRACT
The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the n-AlxGa1-xAs layer (x = 0, 0.15 or 0.3), epitaxially grown on a semi-insulating GaAs substrate. The diodes can serve as reliable and inexpensive sensors of microwave radiation in the millimeter wavelength range; they sense electromagnetic radiation directly, without any external bias voltage at room temperature. The investigation revealed a strong dependence of the detection properties of the microwave diodes on AlAs mole fraction x: in the Ka microwave frequency range, the median value of voltage responsivity is several volts per watt in the case of GaAs-based diodes (x = 0), and it substantially increases, reaching hundreds of volts per watt at higher x values. Also, a model enabling us to forecast the responsivity of the sensor in other frequency ranges is proposed.
ABSTRACT
Niobium-doped titanium dioxide (Ti1-xNbxO2) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H2 atmosphere for 30 min. It was shown that the Ti0.72Nb0.28O2/p+-Si heterojunction fabricated on low resistivity silicon (10-3 Ω cm) had linear current-voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm2. As the resistance dependence on temperature revealed, the current across the Ti0.72Nb0.28O2/p+-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.
ABSTRACT
Electronic properties of InSb and InAs are sensitive to electric field due to their narrow forbidden energy gaps and big difference in effective masses of electrons in different conduction band valleys. Here we report impact ionization processes and redistribution of electrons between the Γ, L and X valleys induced by a single ultrashort terahertz (THz) pulse at 80 K temperature. Monte Carlo simulation revealed that electron motion in this case has near ballistic character. The threshold electric field of impact ionization increases as the THz pulse gets shorter, and the process of impact ionization essentially raises cooling rate of hot electrons. The L valley gets mainly occupied by electrons in InSb while the X valley holds the majority of electrons in InAs at strong electric fields, respectively above 20 kV/cm and 90 kV/cm. The calculated results are in good agreement with the available experimental data.
ABSTRACT
We propose a new design microwave radiation sensor based on a selectively doped semiconductor structure of asymmetrical shape (so-called bow-tie diode). The novelty of the design comes down to the gating of the active layer of the diode above different regions of the two-dimensional electron channel. The gate influences the sensing properties of the bow-tie diode depending on the nature of voltage detected across the ungated one as well as on the location of the gate in regard to the diode contacts. When the gate is located by the wide contact, the voltage sensitivity increases ten times as compared to the case of the ungated diode, and the detected voltage holds the same polarity of the thermoelectric electromotive force of hot electrons in an asymmetrically shaped n-n+ junction. Another remarkable effect of the gate placed by the wide contact is weak dependence of the detected voltage on frequency which makes such a microwave diode to be a proper candidate for the detection of electromagnetic radiation in the microwave and sub-terahertz frequency range. When the gate is situated beside the narrow contact, the two orders of sensitivity magnitude increase are valid in the microwaves but the voltage sensitivity is strongly frequency-dependent for higher frequencies.
