Modeling Injury Risk From Multiple-Impulse, Area-Distributed Flash-bangs Using an Uncertainty Bounding Approach to Dose Accumulation.

INTRODUCTION: Modeling of injury risk from nonlethal weapons including flash-bangs is a critical step in the design, acquisition, and application of such devices for military purposes. One flash-bang design concept currently being developed involves multiple, area-distributed flash-bangs. It is particularly difficult to model the variation inherent in operational settings employing such devices due to the randomness of flash-bang detonation positioning relative to targets. The problem is exacerbated by uncertainty related to changes in the mechanical properties of auditory system tissues and contraction of muscles in the middle ear (the acoustic reflex), which can both immediately follow impulse-noise exposure. In this article, we demonstrate a methodology to quantify uncertainty in injury risk estimation related to exposure to multiple area-distributed flash-bang impulses in short periods of time and analyze the effects of factors such as the number of impulses, their spatial distribution, and the uncertainties in their parameters on estimated injury risk. MATERIALS AND METHODS: We conducted Monte Carlo simulations of dispersion and timing of a mortar-and-submunition flash-bang device that distributes submunitions over an area, using the Auditory 4.5 model developed by L3 Applied Technologies to estimate the risk of hearing loss (permanent threshold shift) in an exposure area. We bound injury risk estimates by applying limiting assumptions for dose accumulation rules applied to short inter-pulse intervals and varied impulse-noise-intensity exposure characteristic of multi-impulse flash-bangs. The upper bound of risk assumes no trading of risk between the number of impulses and intensity of individual impulses, while the lower bound assumes a perfectly protective acoustic reflex. RESULTS: In general, the risk to individuals standing in the most hazardous zone of the simulation is quite sensitive to the pattern of submunitions, relative to the sensitivity for those standing farther from that zone. Larger mortar burst radii (distributing submunitions over a wider area) reduce expected peak risk, while increasing the number of submunitions, the intensity of individual impulses, or the uncertainty in impulse intensity increases expected risk. We find that injury risk calculations must factor in device output variation because the injury risk curve in the flash-bang dose regime is asymmetric. We also find that increased numbers of submunitions increase the peak risk in an area more rapidly than scene-averaged risk and that the uncertainty related to dose accumulation in the acoustic reflex regime can be substantial for large numbers of submunitions and should not be ignored. CONCLUSIONS: This work provides a methodology for exploring both the role of device parameters and the choice of dose accumulation rule in estimating the risk of significant injury and associated uncertainty for multi-impulse, area-distributed flash-bang exposures. This analysis can inform decisions about the design of flash-bangs and training for their operational usage. The methodology can be extended to other device designs or deployment concepts to generate risk maps and injury risk uncertainty ranges. This work does not account for additional injury types beyond permanent threshold shift that may occur as a result of flash-bang exposure. A useful extension of this work would be similar work connecting design and operational parameters to human effectiveness.

Atomic Resolution Imaging of Nanoscale Chemical Expansion in PrxCe1-xO2-δ during In Situ Heating.

Thin film nonstoichiometric oxides enable many high-temperature applications including solid oxide fuel cells, actuators, and catalysis. Large concentrations of point defects (particularly, oxygen vacancies) enable fast ionic conductivity or gas exchange kinetics in these materials but also manifest as coupling between lattice volume and chemical composition. This chemical expansion may be either detrimental or useful, especially in thin film devices that may exhibit enhanced performance through strain engineering or decreased operating temperatures. However, thin film nonstoichiometric oxides can differ from bulk counterparts in terms of operando defect concentrations, transport properties, and mechanical properties. Here, we present an in situ investigation of atomic-scale chemical expansion in PrxCe1-xO2-δ (PCO), a mixed ionic-electronic conducting oxide relevant to electrochemical energy conversion and high-temperature actuation. Through a combination of electron energy loss spectroscopy and transmission electron microscopy with in situ heating, we characterized chemical strains and changes in oxidation state in cross sections of PCO films grown on yttria-stabilized zirconia (YSZ) at temperatures reaching 650 °C. We quantified, both statically and dynamically, the nanoscale chemical expansion induced by changes in PCO redox state as a function of position and direction relative to the film-substrate interface. Additionally, we observed dislocations at the film-substrate interface, as well as reduced cation localization to threading defects within PCO films. These results illustrate several key aspects of atomic-scale structure and mechanical deformation in nonstoichiometric oxide films that clarify distinctions between films and bulk counterparts and that hold several implications for operando chemical expansion or "breathing" of such oxide films.

Dynamic chemical expansion of thin-film non-stoichiometric oxides at extreme temperatures.

Actuator operation in increasingly extreme and remote conditions requires materials that reliably sense and actuate at elevated temperatures, and over a range of gas environments. Design of such materials will rely on high-temperature, high-resolution approaches for characterizing material actuation in situ. Here, we demonstrate a novel type of high-temperature, low-voltage electromechanical oxide actuator based on the model material PrxCe1-xO2-δ (PCO). Chemical strain and interfacial stress resulted from electrochemically pumping oxygen into or out of PCO films, leading to measurable film volume changes due to chemical expansion. At 650 °C, nanometre-scale displacement and strain of >0.1% were achieved with electrical bias values <0.1 V, low compared to piezoelectrically driven actuators, with strain amplified fivefold by stress-induced structural deflection. This operando measurement of films 'breathing' at second-scale temporal resolution also enabled detailed identification of the controlling kinetics of this response, and can be extended to other electrochemomechanically coupled oxide films at extreme temperatures.

Thermoelectric properties of the Ca(5)Al(2-x)In(x)Sb(6) solid solution.

Zintl phases are attractive for thermoelectric applications due to their complex structures and bonding environments. The Zintl compounds Ca(5)Al(2)In(x)Sb(6)and Ca(5)Al(2)In(x)Sb(6) have both been shown to have promising thermoelectric properties, with zT values of 0.6 and 0.7, respectively, when doped to control the carrier concentration. Alloying can often be used to further improve thermoelectric materials in cases when the decrease in lattice thermal conductivity outweighs reductions to the electronic mobility. Here we present the high temperature thermoelectric properties of the Ca(5)Al(2-x)In(x)Sb(6)solid solution. Undoped and optimally Zn-doped samples were investigated. X-ray diffraction confirms that a full solid solution exists between the Al and In end-members. We find that the Al : In ratio does not greatly influence the carrier concentration or Seebeck effect. The primary effect of alloying is thus increased scattering of both charge carriers and phonons, leading to significantly reduced electronic mobility and lattice thermal conductivity at room temperature. Ultimately, the figure of merit is unaffected by alloying in this system, due to the competing effects of reduced mobility and lattice thermal conductivity.

Thermoelectric properties and electronic structure of the zintl-phase Sr(3)AlSb(3).

The Zintl-phase Sr3 AlSb3 , which contains relatively earth-abundant and nontoxic elements, has many of the features that are necessary for good thermoelectric performance. The structure of Sr3 AlSb3 is characterized by isolated anionic units formed from pairs of edge-sharing tetrahedra. Its structure is distinct from previously studied chain-forming structures, Ca3 AlSb3 and Sr3 GaSb3 , both of which are known to be good thermoelectric materials. DFT predicts a relatively large band gap in Sr3 AlSb3 (Eg ≈1 eV) and a heavier band mass than that found in other chain-forming A3 MSb3 phases (A=Sr, Ca; M=Al, Ga). High-temperature transport measurements reveal both high resistivity and high Seebeck coefficients in Sr3 AlSb3 , which is consistent with the large calculated band gap. The thermal conductivity of Sr3 AlSb3 is found to be extremely low (≈ 0.55 W mK(-1) at 1000 K) due to the large, complex unit cell (56 atoms per primitive cell). Although the figure of merit (zT) has not been optimized in the current study, a single parabolic band model suggests that, when successfully doped, zT≈ 0.3 may be obtained at 600 K; this makes Sr3 AlSb3 promising for waste-heat recovery applications. Doping with Zn(2+) on the Al(3+) site has been attempted, but does not lead to the expected increase in carrier concentration.

Thermoelectric properties of Zn-doped Ca5In2Sb6.

The Zintl compound Ca5Al2Sb6 is a promising thermoelectric material with exceptionally low lattice thermal conductivity resulting from its complex crystal structure. In common with the Al analogue, Ca5In2Sb6 is naturally an intrinsic semiconductor with a low p-type carrier concentration. Here, we improve the thermoelectric properties of Ca5In2Sb6 by substituting Zn(2+) on the In(3+) site. With increasing Zn substitution, the Ca5In(2-x)Zn(x)Sb6 system exhibits increased p-type carrier concentration and a resulting transition from non-degenerate to degenerate semiconducting behavior. A single parabolic band model was used to estimate an effective mass in Ca5In2Sb6 of m* = 2m(e), which is comparable to the Al analogue, in good agreement with density functional calculations. Doping with Zn enables rational optimization of the electronic transport properties and increased zT in accordance with a single parabolic band model. The maximum figure of merit obtained in optimally Zn-doped Ca5In2Sb6 is 0.7 at 1000 K. While undoped Ca5In2Sb6 has both improved electronic mobility and reduced lattice thermal conductivity relative to Ca5Al2Sb6, these benefits did not dramatically improve the Zn-doped samples, leading to only a modest increase in zT relative to optimally doped Ca5Al2Sb6.