The Improvement of the Performance of Sky-Blue OLEDs by Decreasing Interface Traps and Balancing Carriers with PSVA Treatment.

The mitigation of interfacial charge accumulation in solution-processed organic light-emitting diodes (s-OLEDs) is an effective method to improve device performance. In this study, the polar solvent vapor annealing (PSVA) method was used to treat two layers in s-OLED, PEDOT:PSS and mCP:DMAC-DPS emitting layers, separately, to optimize the carrier transmission and balance. After the double-layer PSVA treatment, the current efficiency increased, the lifetime of the device is improved, the efficiency roll-off alleviated from 33.3% to 26.6%, and the maximum brightness increased by 31.3%. It is worth mentioning that the work function of the EML interface reduced by 0.36 eV, and the initial injection voltage of the electrons also reduced. Simulating the solubility of the LUMO and HOMO molecule parts of the mCP and DMAC-DPS, it was found that the LUMO parts had stronger polarity and higher solubility in polar solution than the HOMO parts. By comparing the untreated luminescent layer films, it was found that the PSVA treatment improved the uniformity of the film morphology. We may infer that a more ordered molecular arrangement enhances carrier transport as the LUMO parts tend to be close to the surface and the reduced local state traps on the EML surface promote electron injection. According to the experimental results, the injection of holes and electrons is enhanced from both sides of the EML, respectively, and the charge accumulated at the interface of s-OLEDs is significantly reduced due to the improvement of carrier-transported characteristics.

CsPbBr3@CsPbBr3-x Cl x Perovskite Core-Shell Heterojunction Nanowires via a Postsynthetic Method with HCl Gas.

CsPbX3 (X = Cl, Br, I) perovskite nanocrystals (NCs) are promising materials due to their excellent optoelectronic properties. This work shows a successful anion exchange reaction in CsPbBr3 nanowire (NW) systems with HCl gas resulting in a blue-green light-emitting CsPbBr3@CsPbBr3-x Cl x core-shell heterojunction. By adjusting the reaction time and the reaction temperature, the structure and light emission of the NWs can be adjusted. The core-shell heterojunction NCs are stably luminescent in 24 h. The rational mechanism of anion exchange in perovskite NCs is also investigated. The work highlights the feasibility of NWs heterogeneously prepared under the HC1 gas atmosphere, which provides a new strategy for studying the two- and multicolor luminescent perovskite NCs.

Improving the Quality and Luminescence Performance of All-Inorganic Perovskite Nanomaterials for Light-Emitting Devices by Surface Engineering.

Lead halide perovskites and their applications in the optoelectronic field have garnered intensive interest over the years. Inorganic perovskites (IHP), though a novel class of material, are considered as one of the most promising optoelectronic materials. These materials are widely used in detectors, solar cells, and other devices, owing to their excellent charge-transport properties, high defect tolerance, composition- and size-dependent luminescence, narrow emission, and high photoluminescence quantum yield. In recent years, numerous encouraging achievements have been realized, especially in the research of CsPbX3 (X = Cl, Br, I) nanocrystals (NCs) and surface engineering. Therefore, it is necessary to summarize the principles and effects of these surface engineering optimization methods. It is also important to scientifically guide the applications and promote the development of perovskites more efficiently. Herein, the principles of surface ligands are reviewed, and various surface treatment methods used in CsPbX3 NCs as well as quantum-dot light-emitting diodes are presented. Finally, a brief outlook on CsPbX3 NC surface engineering is offered, illustrating the present challenges and the direction in which future investigations are intended to obtain high-quality CsPbX3 NCs that can be utilized in more applications.

Facile Synthesis of Ternary Alloy of CdSe1-xSx Quantum Dots with Tunable Absorption and Emission of Visible Light.

The synthesis of alloyed semiconductor quantum dots has produced structures that have distinct properties in comparison with both their bulk counterparts and their parent binary semiconductor quantum dots. In this work, the quantum confined structures of a ternary alloy of CdSe1-xSx were synthesized by one-pot synthesis method in an aqueous medium at a low temperature and capped with 3-mercaptopropoionic acid. Structures of the synthesized quantum dots were investigated by energy dispersive X-ray, X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. The obtained quantum dots had modified cubic structures as proven by X-ray diffraction and selected area electron diffraction. The optical properties of the synthesized quantum dots were characterized by optical absorption, photoluminescence, and color analysis. Optical absorption investigation revealed a widening of the band gap of CdSe1-xSx with increasing S content. This widening increased for the samples suspended in water relative to the samples measured in powder form due to the difference in the environment of the two cases. The size determined from the optical absorption measurements was found to be compatible with the sizes obtained from the X-ray diffraction with the value of bowing parameter around 1, which indicated a graded diffusion of sulfur. It was also ascertained that the emission of different compositions covered the most visible range with a small full width at half maximum. The x and y values of the chromaticity coordinates decreased with increasing sulfur content of up to 15%, while the z value increased.

Improving charge transport by the ultrathin QDs interlayer in polymer solar cells.

Lead sulfide (PbS) quantum dots (QDs) have been incorporated into PTB7:PC71BM BHJ active layers to fabricate polymer solar cells (PSCs) and gather on the top surface of active layers to form an ultrathin interlayer. The PbS QDs ultrathin interlayer with an appropriate thickness increases the carrier transport capacity, exciton dissociation and reduces the carrier recombination, which leads to a higher short circuit current (J sc) and fill factor (FF). Finally, the power conversion efficiency (PCE) improves from 7.03% (control devices) to 7.87% with an ultrathin interlayer by doping 5% PbS QDs, while the current density (J sc) and fill factor (FF) enhances from 13.83 mA cm-2 to 14.81 mA cm-2 and from 68.70% to 70.85%, respectively.