Stabilizing the Inverted Phase of a WSe2/BLG/WSe2 Heterostructure via Hydrostatic Pressure.

Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin-orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten diselenide (WSe2) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers. To confirm the strengthening of the inverted phase, we present thermal activation measurements and show that the SOI-induced band gap increases by more than 100% due to the applied pressure. Finally, the investigation of Landau level spectra reveals the dependence of the level-crossings on the applied magnetic field, which further confirms the enhancement of SOI with pressure.

Tailoring the Band Structure of Twisted Double Bilayer Graphene with Pressure.

Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which gave a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing of the Fermi level and hence the electron density and also allows tuning of the interlayer potential, giving further control over band gaps. Here, we demonstrate that by application of hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically nontrivial band gap opens at the charge neutrality point at zero displacement field.

Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr.

Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Because of its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits.