Modulation bandwidth improvement of III-V/Si hybrid MOS optical modulator by reducing parasitic capacitance.

In this work, we numerically and experimentally examined the impact of parasitic capacitance on the modulation bandwidth of a III-V/Si hybrid metal-oxide-semiconductor (MOS) optical modulator. The numerical analysis revealed that the parasitic capacitance between the III-V membrane and the Si slab should be considered to achieve high-speed modulation, particularly in the case of a thick gate oxide. We also fabricated a high-speed InGaAsP/Si hybrid MOS optical modulator with a low capacitance using a SiO2-embedded Si waveguide. The fabricated device exhibited a modulation efficiency of 0.245 Vcm and a 3 dB bandwidth of up to 10 GHz. Clear eye patterns with 25 Gbps non-return-to-zero (NRZ) modulation and 40 Gbps 4-level pulse amplitude modulation (PAM-4) were obtained without pre-emphasis.

High-efficiency and high-speed narrow-width MOS capacitor-type Si optical modulator with TM mode excitation.

We developed a high-speed and high-efficiency narrow-width metal-oxide-semiconductor (MOS) capacitor-type Si optical modulator (Si-MOD) by applying TM optical mode excitation. We designed and fabricated an optical-mode-converter structure from TE to TM mode. Even in the case of a 200-nm width, the Si MOS-MOD showed high-modulation efficiency in TM mode (about 0.18 Vcm), and the electrical capacitance decreased as the MOS junction width decreased. We also demonstrated high-speed operation at 32 Gbps and 40 Gbps for the 30-µm-long Si MOS-MOD in TM mode.

Taperless Si hybrid optical phase shifter based on a metal-oxide-semiconductor capacitor using an ultrathin InP membrane.

We propose a III-V/Si hybrid metal-oxide-semiconductor (MOS) optical phase shifter using an ultrathin InP membrane, which allows us to eliminate the III-V taper required for mode conversion between Si and hybrid waveguides. We numerically revealed that thinning a III-V membrane can reduce the insertion loss of the phase shifter while maintaining high modulation efficiency because the optical phase shift is induced by carrier accumulation at the MOS interface. We experimentally demonstrated the proposed optical phase shifter with an ultrathin InP membrane and achieved the modulation efficiency of 0.54 Vcm and the insertion loss of 0.055 dB. Since the taperless structure makes the hybrid integration easier and more flexible, the hybrid MOS optical phase shifter with an ultrathin III-V membrane is promising for large-scale Si programmable photonic integrated circuits.

High-speed Ge/Si electro-absorption optical modulator in C-band operation wavelengths.

We studied a high-speed electro-absorption optical modulator (EAM) of a Ge layer evanescently coupled with a Si waveguide (Si WG) of a lateral pn junction for high-bandwidth optical interconnect. By decreasing the widths of selectively grown Ge layers below 1 µm, we demonstrated a high-speed modulation of 56 Gbps non-return-to-zero (NRZ) and 56 Gbaud pulse amplitude modulation 4 (PAM4) EAM operation in the C-band wavelengths, in contrast to the L-band wavelengths operations in previous studies on EAMs of pure Ge on Si. From the photoluminescence and Raman analyses, we confirmed an increase in the direct bandgap energy for such a submicron Ge/Si stack structure. The operation wavelength for the Ge/Si stack structure of a Ge/Si EAM was optimized by decreasing the device width below 1-µm and setting the post-growth anneal condition, which would contribute to relaxing the tensile-strain of a Ge layer on a Si WG and broadening the optical bandwidths for Franz-Keldysh (FK) effect with SiGe alloy formation.

First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect.

We demonstrate a strained Si0.91Ge0.09-based carrier-injection Mach-Zehnder (MZ) optical modulator using the enhanced plasma dispersion effect in strained SiGe through mass modulation for the first time. The SiGe modulator has an injection current of 1.47 mA for a phase shift of π which is lower than that for a Si modulator. Also, it is expected that the injection current can be further reduced by increasing the strain and Ge fraction, enabling operation at an injection current of less than 1 mA. As an example of the dynamic characteristics, 10 Gbps modulation with clear eye opening was obtained by the pre-emphasis method.

Demonstration of record-low injection-current variable optical attenuator based on strained SiGe with optimized lateral pin junction.

We demonstrate a strained SiGe variable optical attenuator (VOA) with a lateral pin junction which exhibits record-low injection-current for 20-dB attenuation. We optimize the distance between the highly doped p + and n + regions in the lateral pin junction to effectively inject electrons and holes, taking into account the propagation loss. In conjunction with the enhanced free-carrier absorption in strained SiGe, the SiGe VOA with the optimized lateral pin junction exhibits 20-dB attenuation by 20-mA/mm injection current, which is 1.5 times lower current density than that of the Si VOA. The SiGe VOA also shows better RF response than the Si VOA due to the short carrier lifetime in SiGe, allowing us to achieve efficient and fast attenuation modulation simultaneously. Furthermore, 2-GHz switching and error-free transmission of 4 × 12.5 Gbps WDM signal have been also achieved.

Direct creation of three-dimensional photonic crystals by a top-down approach.

Three-dimensional (3D) photonic crystals can block photons in any direction and are expected to make possible their ultimate control. However, creating 3D crystals without any unintentional defects over large areas at optical wavelengths has been challenging. For example, opal-based crystals inevitably contain unintentional defects, it is difficult to increase the sizes of micro-manipulated crystals over approximately 6 microm and producing stacked 3D crystals with thin 2D layers requires complicated and time-consuming processes. So far, these difficulties have hindered 3D photonic-crystal research. Here, we demonstrate a novel top-down approach to creating 3D crystals that overcomes these difficulties and significantly simplifies the process. We have developed a double-angled deep-etching method, which enables the direct creation of 3D woodpile crystals in single-crystalline silicon. A strong photonic bandgap effect with >20 dB attenuation in all directions has been achieved. Furthermore, bonding a light emitter onto or between 3D crystals created in this way has been shown to enhance or suppress spontaneous emission.

Changes in horizontal jaw position and intraoral pressure.

OBJECTIVE: To determine the effect of an imbalance in buccolingual pressure that may be involved in molar dental compensation in the mandible and asymmetry of the dental arch in subjects with facial asymmetry. MATERIALS AND METHODS: We performed simultaneous measurement of the buccolingual pressure on the mandibular right first molar when subjects without facial asymmetry experimentally shifted the mandible laterally. Buccolingual pressures in the rest position (RP), right-shifted position (RS), and left-shifted position (LS) were compared. Moreover, T1-weighted magnetic resonance images were obtained in RP, RS, and LS. RESULTS: Tongue pressure tended to decrease in the order LS > RP > RS, while cheek pressure tended to increase in the order LS < RP < RS. The tongue/cheek pressure ratio tended to decrease in the order LS > RP > RS. There were significant positive (in RS) and negative (in LS) correlations between displacement of the tongue and tongue pressure. CONCLUSIONS: This imbalance in buccolingual pressures in the laterally-shifted mandibular position may partly explain molar dental compensation in the mandible and asymmetry of the dental arch in subjects with facial asymmetry.

Chest wall mesenchymal hamartoma associated with a massive fetal pleural effusion: a case report.

Abstract We report on an extremely rare chest wall mesenchymal hamartoma associated with a massive fetal pleural effusion. Prenatal ultrasound examination demonstrated a heterogeneous mass in the right thorax associated with a massive pleural effusion and right lung compression at 29 weeks of gestation. The patient underwent pleuroamniotic shunting at 30 weeks and was delivered at 33 weeks by cesarean delivery secondary to fetal distress. After management of the respiratory distress and evaluation of the mass, surgery was performed at day of life 8. Histological examination confirmed the diagnosis of a chest wall mesenchymal hamartoma.

Simultaneous inhibition and redistribution of spontaneous light emission in photonic crystals.

Inhibiting spontaneous light emission and redistributing the energy into useful forms are desirable objectives for advances in various fields, including photonics, illuminations, displays, solar cells, and even quantum-information systems. We demonstrate both the "inhibition" and "redistribution" of spontaneous light emission by using two-dimensional (2D) photonic crystals, in which the refractive index is changed two-dimensionally. The overall spontaneous emission rate is found to be reduced by a factor of 5 as a result of the 2D photonic bandgap effect. Simultaneously, the light energy is redistributed from the 2D plane to the direction normal to the photonic crystal.

Modulation of masticatory muscle activity by tongue position.

The purpose of this study was to test whether the tongue position affects the electromyographic (EMG) activities of masticatory muscles. We recorded the EMG activities of the masseter and anterior temporalis muscles in 10 skeletal Class I adults. Tongue position was monitored by two pressure transducers embedded in the midpalatal region and the lingual flange of a custom-made acrylic monoblock. We instructed subjects to assume three different tongue positions: rest, superior, and anterior. Friedman's test and Sheffe's F-test were used to statistically examine differences in muscle activities induced by changes in tongue position. Significant differences were found in masseter muscle activity between the rest and anterior positions and in anterior temporalis muscle activity between the rest and both the anterior and the superior tongue positions. We concluded that masticatory muscle activity is affected by tongue position.

Anorectal agenesis with a rectourethral fistula diagnosed in an adult: report of a case.

We report an unusual case of anorectal agenesis with a rectourethral fistula diagnosed in a 48-year-old man. The patient presented after noticing hematuria, although he had been aware of urinary leakage from his colostomy with occasional fecal urine for about 4 years. He had had a double-barrel colostomy created soon after birth for an imperforate anus, with revision at the age of 4 years to correct a prolapse of the stoma, but his malformation had never been repaired. We performed a physical examination, which did not reveal a perineal fistula, but urethrocystography demonstrated high anorectal agenesis with a rectourethral fistula. Thus, we resected the rectourethral fistula and created an end-colostomy. The patient had an uneventful postoperative course, and was discharged in good health on postoperative day 19. To our knowledge, this is the oldest patient to be diagnosed with anorectal agenesis and undergo resection of a rectourethral fistula.