Emulating the local Kuramoto model with an injection-locked photonic crystal laser array.

The Kuramoto model is a mathematical model for describing the collective synchronization phenomena of coupled oscillators. We theoretically demonstrate that an array of coupled photonic crystal lasers emulates the Kuramoto model with non-delayed nearest-neighbor coupling (the local Kuramoto model). Our novel strategy employs indirect coupling between lasers via additional cold cavities. By installing cold cavities between laser cavities, we avoid the strong coupling of lasers and realize ideal mutual injection-locking with effective non-delayed dissipative coupling. First, after discussing the limit cycle interpretation of laser oscillation, we demonstrate the synchronization of two indirectly coupled lasers by numerically simulating coupled-mode equations. Second, by performing a phase reduction analysis, we show that laser dynamics in the proposed device can be mapped to the local Kuramoto model. Finally, we briefly demonstrate that a chain of indirectly coupled photonic crystal lasers actually emulates the one-dimensional local Kuramoto chain. We also argue that our proposed structure, which consists of periodically aligned cold cavities and laser cavities, will best be realized by using state-of-the-art buried multiple quantum well photonic crystals.

Designs toward synchronization of optical limit cycles with coupled silicon photonic crystal microcavities: erratum.

Correction for the citation of a reference.

Designs toward synchronization of optical limit cycles with coupled silicon photonic crystal microcavities.

A driven high-Q Si microcavity is known to exhibit limit cycle oscillation originating from carrier-induced and thermo-optic nonlinearities. We propose a novel nanophotonic device to realize synchronized optical limit cycle oscillations with coupled silicon (Si) photonic crystal (PhC) microcavities. Here, coupled limit cycle oscillators are realized by using coherently coupled Si PhC microcavities. By simulating coupled-mode equations, we theoretically demonstrate mutual synchronization (entrainment) of two limit cycles induced by coherent coupling. Furthermore, we interpret the numerically simulated synchronization in the framework of phase description. Since our proposed design is perfectly compatible with current silicon photonics fabrication processes, the synchronization of optical limit cycle oscillations will be implemented in future silicon photonic circuits.

Mid-Infrared Lasing of Single Wurtzite InAs Nanowire.

Mid-infrared (MIR) photonics is a developing technology for sensing materials by their characteristic MIR absorptions. Since silicon (Si) is a low-loss material in most of the MIR region, Si photonic structures have been fabricated to guide and confine MIR light, and they allow us to achieve sensitive and integrated sensing devices. However, since the implementation of MIR light sources on Si is still challenging, we propose a thick indium arsenide (InAs) nanowire as an MIR laser that can couple to Si photonic structures with material manipulation. In this study, thick InAs nanowires are grown on an indium phosphide substrate with a self-catalyst vapor-liquid-solid method and transferred to gold-deposited SiO2/Si substrates. Low-temperature microphotoluminescence (PL) spectroscopy shows that InAs nanowires exhibit broad PL peaking at a wavelength of around 2.6 µm (3850 cm-1 in frequency), which corresponds to the bandgap energy of wurtzite InAs. At high optical pump fluences, single InAs nanowire exhibits sharp emission peaks, while their integrated intensity and polarization degree increase abruptly at the threshold pump fluence. These nonlinear behaviors indicate that the MIR lasing action takes place in the InAs nanowire in its cavity mode. Our demonstration of the MIR nanowire laser expands the wavelength coverage and potential application of semiconductor nanowires.

Giant Paramagnetism-Induced Valley Polarization of Electrons in Charge-Tunable Monolayer MoSe_{2}.

For applications exploiting the valley pseudospin degree of freedom in transition metal dichalcogenide monolayers, efficient preparation of electrons or holes in a single valley is essential. Here, we show that a magnetic field of 7 T leads to a near-complete valley polarization of electrons in a MoSe_{2} monolayer with a density 1.6×10^{12} cm^{-2}; in the absence of exchange interactions favoring single-valley occupancy, a similar degree of valley polarization would have required a pseudospin g factor of 38. To investigate the magnetic response, we use polarization resolved photoluminescence as well as resonant reflection measurements. In the latter, we observe gate voltage dependent transfer of oscillator strength from the exciton to the attractive Fermi polaron: stark differences in the spectrum of the two light helicities provide a confirmation of valley polarization. Our findings suggest an interaction induced giant paramagnetic response of MoSe_{2}, which paves the way for valleytronics applications.