Pt surface modification of SnO2 nanorod arrays for CO and H2 sensors.

Uniform SnO(2) nanorod arrays were deposited on a 4 inch SiO(2)/Si wafer by plasma-enhanced chemical vapor deposition (PEVCD) at low deposition temperature of around 300 degrees C. The SnO(2) nanorods were connected at the roots, thus the nanorod sensors could be fabricated by a feasible way compatible with microelectronic processes. The surface of the sensors was modified by Pt nanoparticles deposited by dip coating and sputtering, respectively. The sensing properties of the Pt-modified SnO(2) nanorod sensors to CO and H(2) gases were comparatively studied. After surface modification of Pt, the sensing response to CO and H(2) gases increased dramatically. The 2 nm Pt-modified SnO(2) nanorod sensors by sputtering showed the best sensing performance. By increasing Pt thickness from 2 nm up to 20 nm, the optimal working temperature decreased by 30 degrees C while the sensing response also decreased by about 4 times. Comparing these two Pt modification approaches by dip coating and sputtering, both could achieve comparable promotion effect if the Pt thickness can be controlled around its optimal value. The deposition technique of SnO(2) nanorod arrays by PECVD has good potential for scale-up and the fabrication process of nanorod sensors possesses simplicity and good compatibility with contemporary microelectronics-based technology.

High sensitivity SnO2 single-nanorod sensors for the detection of H2 gas at low temperature.

Uniform SnO(2) nanorods were grown by inductively coupled plasma-enhanced chemical vapor deposition without catalysts and additional heating. The SnO(2) nanorods were aligned on a pair of Au/Ti electrodes by the dielectrophoresis method. SnO(2) single-nanorod gas sensors were fabricated by connecting individual SnO(2) nanorods to a pair of Au/Ti electrodes with Pt stripes deposited by a focused ion beam. The sensing properties of the SnO(2) single-nanorod sensor were studied. The SnO(2) single-nanorod sensor could detect 100 ppm H(2) at room temperature with repeated response and showed a large change of resistance, fast response time and good reversibility at an elevated operating temperature of 200 degrees C. The optimal sensing performance of the sensor is achieved at the operating temperature of around 250 degrees C.

Charge trapping phenomena of tetraethylorthosilicate thin film containing Si nanocrystals synthesized by solid-state reaction.

In this work, we report on the fabrication of tetraethylorthosilicate (TEOS) thin dielectric film containing silicon nanocrystals (Si nc), synthesized by solid-state reaction, in a capacitor structure. A metal-insulator-semi-conductor (MIS) capacitor, with 28 nm thick Si nc in a TEOS thin film, has been fabricated. For this MIS, both electron and hole trapping in the Si nc are possible, depending on the polarity of the bias voltage. A V(FB) shift greater than 1 V can be experienced by a bias voltage of 16 V applied to the metal electrode for 1 s. Though there is no top control oxide, the discharge time for 10% of charges can be up to 4480 s when it is biased at 16 V for 1 s. It is further demonstrated that charging and discharging mechanisms are due to the Si nc rather than the TEOS oxide defects. This form of Si nc in a TEOS thin film capacitor provides the possibility of memory applications at low cost.