1.
Opt Express
; 17(19): 16739-44, 2009 Sep 14.
Article
in English
| MEDLINE
| ID: mdl-19770889
ABSTRACT
A new class of silicon-based light-emitting diode is demonstrated using InSb-quantum-dot-embedded Si containing the emissive {311} rod-like defects (RLDs). A narrow peak centered at 1377 nm (900 meV) characteristic of the {311} RLDs was found to develop out of an otherwise broad background electroluminescence (EL) upon the application of electric fields in the growth direction. Such electric-field-active EL was observed up to 150 K with a slight downward shift of the peak energies, accompanied by an anomaly in the thermal roll-off of the EL intensity. Spectral variations with temperature and electric field indicate a switching of dominance between the closely correlated defect states that are responsible for the EL emission.