Protective Effects of Carbonated Chitosan Montmorillonite on Vomitoxin-Induced Intestinal Inflammation.

Exposure to vomitoxin (DON) can negatively impact the intestinal health of livestock and poultry, leading to compromised nutrient absorption and utilization, resulting in slowed growth and reduced production efficiency. In this study, we synthesized carbonated chitosan montmorillonite intercalation complexes (CCM) through solution precipitation. The successful formation of intercalation complexes was confirmed by examining functional groups and surface features using infrared spectroscopy and scanning electron microscopy. To assess the impact of CCM on DON-infected mice, we established an experimental mouse model of jejunal inflammation induced by DON infection. We analyzed the effects of CCM on blood biochemical and conventional indices, jejunal inflammatory factors, pathological changes, and the expression of proteins in the MAPK pathways in DON-infected mice. Our results indicate that CCM effectively mitigates the adverse effects of DON on growth performance, jejunal injury, and the inflammatory response in mice. CCM supplementation alleviated the negative effects of DON infection on growth performance and reduced intestinal inflammation in mice. Moreover, CCM supplementation successfully inhibited the activation of the mitogen-activated protein kinase (MAPK) signaling pathway induced by DON. These findings suggest that the mitigating effect of CCM on DON-induced inflammatory injury in the murine jejunum is closely linked to the regulation of the MAPK signaling pathway.

Localized surface plasmon enhanced Ga2O3 solar blind photodetectors.

Enhancement in the light interaction between plasmonic nanoparticles (NPs) and semiconductors is a promising way to enhance the performance of optoelectronic devices beyond the conventional limit. In this work, we demonstrated improved performance of Ga2O3 solar-blind photodetectors (PDs) by the decoration of Rh metal nanoparticles (NPs). Integrated with Rh NPs on oxidized Ga2O3 surface, the resultant device exhibits a reduced dark current of about 10 pA, an obvious enhancement in peak responsivity of 2.76 A/W at around 255 nm, relatively fast response and recovery decay times of 1.76 ms/0.80 ms and thus a high detectivity of ∼1013 Jones. Simultaneously, the photoresponsivity above 290 nm wavelength decreases significantly with improved rejection ratio between ultraviolet A (UVA) and ultraviolet B (UVB) regions, indicative of enhanced wavelength detecting selectivity. The plasmonic resonance features observed in transmittance spectra are consistent with the finite difference time-domain (FDTD) calculations. This agreement indicates that the enhanced electric field strength induced by the localized surface plasmon resonance is responsible for the enhanced absorption and photoresponsivity. The formed localized Schottky barrier at the interface of Rh/Ga2O3 will deplete the carriers at the Ga2O3 surface and lead to the remarkable reduced dark current and thus improve the detectivity. These findings provide direct evidence for Rh plasmonic enhancement in solar-blind spectral region, offering an alternative pathway for the rational design of high-performance solar-blind PDs.

Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO2 blocking layer.

This study characterizes the charge storage characteristics of metal/HfO2/Au nanocrystals (NCs)/SiO2/Si and significantly improves memory performance and retention time by annealing the HfO2 blocking layer in O2 ambient at 400°C. Experimental evidence shows that the underlying mechanism can be effectively applied to reduce oxygen vacancy and suppress unwanted electron trap-assisted tunneling. A memory window of 1 V at an applied sweeping voltage of ±2 V is also shown. The low program/erase voltage (±2 V) and the promising retention performances indicate the potential application of NCs in low-voltage, non-volatile memory devices.

Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion.

GeSi nanoislands grown on nanotip pre-patterned Si substrates at various temperatures are investigated. Nanoislands with a high density and narrow size distribution can be obtained within an intermediate temperature range, and the Ge atom diffusion length is comparable to half of the average distance of the Si nanotips. The Ge concentration distributions at the center and edge of the GeSi nanoislands are measured by scanning transmission electron microscopy. The results reveal that there is a Si core at the center of the GeSi nanoisland, but the Ge concentration presents a layered distribution above the Si nanotips. The radial component of the stress field in Ge layer near the Ge/Si interface on the planar, and the nanotip regions is qualitatively discussed. The difference of the stress field reveals that the experimentally observed concentration profile can be ascribed to the stress-induced interdiffusion self-limiting effect of the Si nanotips.