White-Light GaN-µLEDs Employing Green/Red Perovskite Quantum Dots as Color Converters for Visible Light Communication.

GaN-based µLEDs with superior properties have enabled outstanding achievements in emerging micro-display, high-quality illumination, and communication applications, especially white-light visible light communication (WL-VLC). WL-VLC systems can simultaneously provide white-light solid-state lighting (SSL) while realizing high-speed wireless optical communication. However, the bandwidth of conventional white-light LEDs is limited by the long-lifetime yellow yttrium aluminum garnet (YAG) phosphor, which restricts the available communication performance. In this paper, white-light GaN-µLEDs combining blue InGaN-µLEDs with green/red perovskite quantum dots (PQDs) are proposed and experimentally demonstrated. Green PQDs (G-PQDs) and red PQDs (R-PQDs) with narrow emission spectrum and short fluorescence lifetime as color converters instead of the conventional slow-response YAG phosphor are mixed with high-bandwidth blue InGaN-µLEDs to generate white light. The communication and illumination performances of the WL-VLC system based on the white-light GaN-based µLEDs are systematically investigated. The VLC properties of monochromatic light (green/red) from G-PQDs or R-PQDs are studied in order to optimize the performance of the white light. The modulation bandwidths of blue InGaN-µLEDs, G-PQDs, and R-PQDs are up to 162 MHz, 64 MHz, and 90 MHz respectively. Furthermore, the white-light bandwidth of 57.5 MHz and the Commission Internationale de L'Eclairage (CIE) of (0.3327, 0.3114) for the WL-VLC system are achieved successfully. These results demonstrate the great potential and the direction of the white-light GaN-µLEDs with PQDs as color converters to be applied for VLC and SSL simultaneously. Meanwhile, these results contribute to the implementation of full-color micro-displays based on µLEDs with high-quality PQDs as color-conversion materials.

Fabrication and investigation of quaternary Ag-In-Zn-S quantum dots-based memristors with ultralow power and multiple resistive switching behaviors.

Quaternary Ag-In-Zn-S (AIZS) quantum dots (QDs) play critical roles in various applications since they have advantages of combining superior optical and electrical features, such as tunable fluorescence emission and high carrier mobilities. However, the application of semiconductor AIZS QDs in brain-inspired devices (e.g. memristor) has been rarely reported. In this work, the tunable volatile threshold switching (TS) and non-volatile memory switching (MS) behaviors have been obtained in a memristor composed of AIZS QDs by regulating the magnitude of compliance current. Additionally, the innovative Ag/AIZS structure devices without traditional oxide layer exhibit low operation voltage (∼0.25 V) and programming current (100 nA) under the TS mode. Moreover, the devices achieve reproducible bipolar resistive switching (RS) behaviors with large ON/OFF ratio of ∼105, ultralow power consumption of ∼10-10 W, and good device-to-device uniformity under the MS mode. Furthermore, the charge transport mechanisms of the high- and low-resistance states under the positive and negative bias have been analyzed with space-charge-limited-current and filament conduction models, respectively. This work not only validates the potential of AIZS QDs acting as dielectric layer in RS devices but also provides a new guideline for designing ultralow power and multiple RS characteristics devices.

Sandwiched graphene/hBN/graphene photonic crystal fibers with high electro-optical modulation depth and speed.

Graphene-photonic crystal fibers (PCFs) are obtained by integrating the broadband optical response and electro-optic tunability of graphene with the high-quality waveguide capacity and easy-integrability of the PCF, and this has been proven to be an important step towards multimaterial multifunctional fiber and all-fiber integrated circuits. However, the reported electro-optic modulator based on directly-grown graphene-PCF suffers from very low response speed (below 100 Hz) due to the slow response of ionic liquid. Here, we propose new functional PCFs with a sandwiched graphene/hBN/graphene (Gr/hBN/Gr) film attached to the hole walls of the fibers, and theoretically demonstrate that the in-line modulator based on it can achieve simultaneous single-mode transmission ranging from 1260 nm to 1700 nm (covering all optical communication bands), significant modulation depth (e.g. ∼42 dB mm-1 at 1550 nm) and high modulation speed (up to ∼0.1 GHz). Furthermore, various device functions can be designed by changing the structure of the fiber, including the length, the hole diameter and the layer numbers of graphene and hBN films. This proposed approach directs a viable path to obtain high-performance all-fiber devices based on hybrid two-dimensional material optical fibers.