Spectroscopy and efficient dual-wavelength laser performances of a Nd:GYSAG crystal.

We reported on the spectral properties and dual-wavelength laser performances of a novel, to the best of our knowledge, Nd:Gd1.8Y1.2ScAl4O12 (Nd:GYSAG) crystal for the first time. The absorption spectra, emission spectra, and fluorescence lifetime were systematically investigated. Further, a continuous-wavelength (CW) laser output power up to 5.02 W was obtained under an absorbed pump power of 9.45 W with slope and optical-to-optical efficiencies of 59.4% and 53.1%, respectively, at 1061.2 and 1063.2 nm. A stable passively Q-switched (PQS) laser employing Cr:YAG as a saturable absorber (SA) was realized. The maximum average output power of 0.756 W with a slope of near 34.4% was obtained with the pulse width, pulse energy, and peak power of 14.0 ns, 128.1 µJ, and 9.15 kW, respectively. The results indicate that the Nd:GYSAG crystal is an excellent laser medium for generating a high-efficiency dual-wavelength laser and has potential in terahertz (THz) laser generation.

Strip loaded waveguide amplifiers based on erbium-doped nanocomposites with 17†dB internal net gain.

We propose a strip loaded amplifier employing SU-8 as the loaded waveguide and nanoparticles (NPs)-polymethyl methacrylate (PMMA) as the cladding layer. By leveraging the undoped SU-8 loaded waveguide, the polymer waveguide amplifier accomplished remarkably low transmission losses, reaching as low as 1.8 dB/cm at 1530 nm. We prepared NPs-PMMA nanocomposite by utilizing NaLu0.1Y0.7F4: Er3+, Yb3+ @NaLuF4 core-shell nanoparticles, which exhibited a significantly enhanced lifetime of 6.15 ms. An internal net gain of up to 17.7 dB was achieved on a strip loaded waveguide with a length as short as 0.5 cm when the on-chip pump power was 77 mW. Signal enhancement (SE) was measured at different wavelengths, revealing that the strip loaded waveguide exhibited broadband SE ranging from 1510 nm to 1570 nm, covering the C-band. To the best of our knowledge, this work has achieved the highest gain results reported thus far on a polymer matrix and provides an efficient method for optical amplification in passive devices on silicon and Si3N4 platforms, leveraging the ease of integration of polymer materials with diverse photonic platforms.

Structures and Properties of High-Concentration Doped Th:CaF2 Single Crystals for Solid-State Nuclear Clock Materials.

Thorium-doped vacuum ultraviolet (VUV) transparent crystals is a promising candidate for establishing a solid-state nuclear clock. Here, we report the research results on high-concentration doping of 232Th:CaF2 single crystals. The structures, defects, and VUV transmittance performances of highly doped Th:CaF2 crystals are investigated by theoretical and experimental methods. The defect configurations formed by Th and the charge compensation mechanism (Ca vacancy or interstitial F atoms) located at its first nearest neighbor position are mainly considered and studied. The preferred defect configuration is identified according to the doping concentration dependence of structural changes caused by the defects and the formation energies of the defects at different Ca or F chemical potentials. The cultivated Th:CaF2 crystals maintain considerable high VUV transmittance levels while accommodating high doping concentrations, showcasing an exceptional comprehensive performance. The transmittances of 1-mm-thick samples with doping concentrations of 1.91 × 1020 and 2.76 × 1020 cm-3 can reach ∼62% and 53% at 150 nm, respectively. The VUV transmittance exhibits a weak negative doping concentration dependence. The system factors that may cause distortion and additional deterioration of the VUV transmittance are discussed. Balancing and controlling the impacts of various factors will be of great significance for fully exploiting the advantages of Th:CaF2 and other Th-doped crystals for a solid-state nuclear optical clock.

Gain enhancement technique for S-band polymer-based waveguide amplifiers.

The S-band polymer-based waveguide amplifier has been fabricated, but how to improve the gain performance remains a big challenge. Here, using the technique of establishing the energy transfer between different ions, we successfully improved the efficiency of Tm3+:3F3→3H4 and 3H5→3F4 transitions, resulting in the emission enhancement at 1480 nm and gain improvement in S-band. By doping the NaYF4:Tm,Yb,Ce@NaYF4 nanoparticles into the core layer, the polymer-based waveguide amplifier provided a maximum gain of 12.7 dB at 1480 nm, which was 6 dB higher than previous work. Our results indicated that the gain enhancement technique significantly improved the S-band gain performance and provided guidance for even other communication bands.

(S + C)-band polymer waveguide amplifier based on Tm3+ and Er3+ layer-doped core-shell nanoparticles.

Optical waveguide amplifiers are essential devices in integrated optical systems. Their gain bandwidths directly determine the operating wavelength of optical circuits. Due to the difficulty of developing wideband gain media, it has been a challenge to fabricate devices with broadband amplification capability, resulting in few reports on multi-band polymer waveguide amplifiers. Here, a polymer waveguide amplifier is demonstrated, which achieves loss compensation covering the whole (S + C) band by using NaYF4:Tm,Yb@NaYF4@NaYF4:Er nanoparticles (NPs)-doped SU-8 as the gain medium. The NPs with a layer-doped core-multishell structure not only provided two emitters required for (S + C)-band amplification, but also reduced the energy transfer (ET) between them. Under 980-nm excitation, the full width at half maximum (FWHM) of the emission peak of NPs reached 119 nm, and the relative gain in the (S + C) band was about 6-8 dB, successfully expanding the operating wavelength from single-band to multi-band.

Polymer/silica hybrid waveguide amplifier at 532 nm based on NaYF4:Er3+, Yb3+ nanocrystals.

An optical waveguide amplifier, which can solve the problem of optical attenuation in optical network transmission, is the key technology to solve optical chip integration and optical interconnection. Here, to the best of our knowledge, we propose a novel polymer/silica hybrid waveguide amplifier at 532 nm for the first time. The research is of great significance to the improvement of short distance communication and visible light communication system. The waveguide amplifier was designed as an embedded structure based on NaYF4:Er3+Yb3+ nanocrystals, which were synthesized by high-temperature thermal decomposition. When the input signal power was 0.1 mW, and the pump power was 300 mW, a relative gain of 4.3 dB was obtained on an 8 mm waveguide. This result is of great research significance to break the distance limit and make all-optical transmission a reality.

Yb:GdScO3 crystal for efficient ultrashort pulse lasers.

We present, to the best of our knowledge, the first demonstration of thermal, optical, and laser properties of Yb:GdScO3 for potentially efficient ultrashort pulse lasers. The stimulated emission cross section at 1025 nm (E//c) is 0.46×10-20cm2 with the emission band width of 85 nm, even broader than the well-known Yb:CaGdAlO4. It has quite a high thermal conductivity of 5.54W/(m⋅K) at 50°C, comparable with Yb:YAG. In the continuous-wave regime, the maximum output power of 13.45 W at 1063.9 nm was generated with the optical-to-optical efficiency of 63.3%. These results suggest that the Yb:GdScO3 crystal is a promising candidate for ultrashort pulse lasers.