ABSTRACT
Metal ion intercalation into Group VI transition metal dichalcogenides enables control over their carrier transport properties. In this work, we demonstrate a low-temperature, solution-phase synthetic method to intercalate cationic vanadium complexes into bulk WS2. Vanadium intercalation expands the interlayer spacing from 6.2 to 14.2 Å and stabilizes the 1T' phase of WS2. Kelvin-probe force microscopy measurements indicate that vanadium binding in the van der Waals gap causes an increase in the Fermi level of 1T'-WS2 by 80 meV due to hybridization of vanadium 3d orbitals with the conduction band of the TMD. As a result, the carrier type switches from p-type to n-type, and carrier mobility increases by an order of magnitude relative to the Li-intercalated precursor. Both the conductivity and thermal activation barrier for carrier transport are readily tuned by varying the concentration of VCl3 during the cation-exchange reaction.
